Abstract:Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence（PL） and deep level transient spectroscopy（DLTS）. The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses.Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R 2 （Ec-0.51 eV） appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.

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Electron Beam Induced Fragmentation of Fullerene Derivatives

Systematic Studies of Fullerene Derivative Electron Beam Resists

Destruction of C-60 Films by Boron Ion-Bombardment

Fragmentation of C60 Molecules in Partially Ionized Fullerene Beam Deposition

Structural Stability of C60 Films under the Bombardment of 1.95 GeV Kr Ions

Deposition of C60 Films by Partially Ionized Fullerene Beams

Studies of C-60 Films Deposited Using Ionized Cluster Beam Deposition Technique

Exposure mechanism of fullerene derivative electron beam resists

Effect of Hydrogen Radical Exposure on the Interfacial and Bulk Structure of A-Si:H/a-sinx:h Multilayer Films

Electron-Beam-Induced Damage in Self-Assembled Monolayers

Structural and Electronic Studies of C60 Films Deposited Using a New Technique of Neutral Cluster Beam Deposition

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Low-Temperature Synthesis of C-60 Thin Films by Ionized Cluster Beam Deposition Technique

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Lattice Deformation and Electronic Structure of the C-60(+) Cation

Different Effects of Laser on C60 Adsorbed on the Si (111)7 × 7 and Si (100) 2 × 1 Surfaces