Abstract:Recently there has been significant interest in the field of molecular resists as a route to shrinking the trade-off between resolution, line width roughness and sensitivity for next generation lithography. We have previously presented initial results of a three component fullerene derivative based negative tone chemically amplified electron beam resist with sparse feature resolution of ~12 nm, half pitch resolution of ~20 nm, sub 5 nm line width roughness, sub 10 μC/cm2 sensitivity, and high etch durability. Here we present a further study of the properties of this molecular resist. The material shows extremely wide process latitude. In particular it has been shown that the resolution and sensitivity of the resist are not strongly affected by the post exposure bake conditions. Indeed a post exposure bake was not required at all in order to observe high resolution high sensitivity behavior from the material implying that this is a low activation energy resist. Such low Ea resists were original developed to address problems with airborne contaminants (T-topping) but can suffer from problems with extended post exposure delay (acid diffusion) and with sensitivity to humidity. However, the fullerene based resist was extremely stable under ambient conditions and for post exposure delays of 24 hours, regardless of whether a post exposure bake was applied, showing that the post exposure bake step can be eliminated for this resist, and furthermore that the chemical amplification reaction in the material is in some way self limiting.

Exposure mechanism of fullerene derivative electron beam resists

Systematic Studies of Fullerene Derivative Electron Beam Resists

Functionalization of Fullerene for Electron Beam Nanolithography Resist.

A Fullerene Derivative As an Electron Beam Resist for Nanolithography

Electron Beam Induced Fragmentation of Fullerene Derivatives

Fullerene Derivatives as Novel Resist Materials for Fabrication of MEMS Devices by Electron Beam Lithography

Chemically Amplified Phenolic Fullerene Electron Beam Resist

A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist

Chemically Amplified Fullerene Resists for E-Beam Lithography

A High Resolution Water Soluble Fullerene Molecular Resist for Electron Beam Lithography

Chemically Amplified Molecular Resists for E-Beam Lithography

Low Activation Energy Fullerene Molecular Resist

Chemically Amplified Fullerene Resists, Spin-on Fullerene Hardmasks and High Aspect Ratio Etching

Positive-tone Chemically Amplified Fullerene Resist

Ultrathin Fullerene Films As High-Resolution Molecular Resists for Low-Voltage Electron-Beam Lithography.

Electron-Beam-Induced Fragmentation In Ultrathin C-60 Films On Si(100)-2x1-H: Mechanisms Of Cage Destruction

Electron-beam Damage of C60 Films on Hydrogen-Passivated Si(100)

Deposition of C60 Films by Partially Ionized Fullerene Beams

Fullerene Resist Materials for the 32 Nm Node and Beyond

Tuning of C-60 Energy Levels Using Orientation-Controlled Phthalocyanine Films

Polysubstituted Derivatives of Triphenylene As High Resolution Electron Beam Resists for Nanolithography