Abstract:SiC nanocrystals (NCs) exhibit unique surface chemistry and possess special properties. This provides the opportunity to design suitable surface structures by terminating the surface dangling bonds with different atoms thereby boding well for practical applications. In this article, we report the photoluminescence properties of 3C-SiC NCs in water suspensions with different pH values. Besides a blue band stemming from the quantum confinement effect, the 3C-SiC NCs show an additional photoluminescence band at 510 nm when the excitation wavelengths are longer than 350 nm. Its intensity relative to the blue band increases with the excitation wavelength. The 510 nm band appears only in acidic suspensions but not in alkaline ones. Fourier transform infrared, X-ray photoelectron spectroscopy, and X-ray absorption near-edge structure analyses clearly reveal that the 3C-SiC NCs in the water suspension have Si-H and Si-OH bonds on their surface, implying that water molecules only react with a Si-terminated surface. First-principle calculations suggest that the additional 510 nm band arises from structures induced by H+ and OH- dissociated from water and attached to Si dimers on the modified (001) Si-terminated portion of the NCs. The size requirement is consistent with the observation that the 510 nm band can only be observed when the excitation wavelengths are relatively large, that is, excitation of bigger NCs.

Surface structure of 3C‐SiC(111) grown on Si(111) surface by C 60 precursor

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

An atomic structural model of (23×23)-R30° reconstruction proposed for 3C–SiC(111) crystallized islands on Si(111) by C60 precursor

Surface structure of the 3x3-Si phase on Al(111), studied by the multiple usages of positron diffraction and core-level photoemission spectroscopy

Film Growth And Surface Reactions Of C-60 On Si(100)H(2x1)

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

The Growth of Si on Sic Complex Substrate by Cvd

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

A density functional theory study of the atomic and electronic structures of 3C-SiC()-()-R30° surface reconstruction

Film Growth and Surface Reactions Ofc60onsi(100)h

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

STM and RHEED study of the Si(001)-c(8x8) surface

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Microstructure and texture of polycrystalline 3C–SiC thick films characterized via EBSD

Identification of Surface Structures on 3C-Sic Nanocrystals with Hydrogen and Hydroxyl Bonding by Photoluminescence

Formation of the Schottky Barrier at (3 × 1)na/si(111) Surface

First principles study of the adsorption of C60 on Si(111)