Abstract:Honeycomb-chain-channel (HCC) and π-bond Seiwatz chain (SC) are the well-known reconstructions induced by alkaline earth metal on Si(111) surface. Here we identify by ab initio calculations a stable intermediate phase of Sr/Si(111)-(5×4) HCC+SC. This new reconstruction satisfies the electron counting rule with the Sr coverage of 3/10 monolayer. In each (5×4) surface unit cell, six Sr atoms are distributed as evenly as possible in the two channels. One of the channels contains two Sr atoms on the top site T4 and one Sr atom on the hollow site H3, while another channel contains two Sr atoms on site H3 and one on site T4. Electronic band structures and band-decomposed charge density distributions show that there are seven occupied surface states (<math>S1</math>–<math>S5</math>, <math>Σ1</math> and <math>Σ2</math>) and two unoccupied surface states (<math>S6</math> and <math>S7</math>) near the Fermi level. Moreover, we find that this new (5×4) surface structure is a semiconductor with a surface band gap of 0.62 eV, determined by the <math>S2</math> and <math>S6</math> surface states in honeycomb Si chains.

An atomic structural model of (23×23)-R30° reconstruction proposed for 3C–SiC(111) crystallized islands on Si(111) by C60 precursor

A new structural model for the SiC(0001)(3×3) surface derived from first principles studies

A new structural model for the SiC(0 0 0 1)(3 × 3) surface derived from first principles studies

The structural models for the reconstructions of 3C-SiC(111) and 6H-SiC(0001) surfaces

A density functional theory study of the atomic and electronic structures of 3C-SiC()-()-R30° surface reconstruction

A New Structural Model For The Sic(0001)(3 X 3) Surface Derived From First Principles Studies

The Structural Models For The (2 Root 3 X 2 Root 3) R30 Degrees Reconstructions Of 3c-Sic(111) And 6h-Sic(0001) Surfaces

Surface structure of 3C‐SiC(111) grown on Si(111) surface by C 60 precursor

Identifying Molecular Orientation Of Individual C-60 On A Si(111)-(7 X 7) Surface

Identifying Molecular Orientation of Individual C 60 on a Si\(111\)-\(7×7\) Surface

The Structural Models for the Reconstructions of 3C-Sic(111) and 6H-Sic(0001) Surfaces

Atomic Structure Of The Si(112) 7x1-In Surface

Atomic Structure of Sr-induced Reconstructions on the Si(100) Surface

Atomic Structure Of The Si(103)1x1-In Surface

Scanning Tunneling Spectroscopy of Individual C60 Molecules Adsorbed on Si(111)-7×7 Surface

Atomic-scale Modification on Si(111)7×7 Surfaces

Study of Metastable Reconstructions of Si(111) Surface by STM

First-principles Study of Geometric and Electronic Structures of Si(111)-√7 × √3-in Surface Reconstruction

Structural stability and electronic properties of Sr induced (5×4) reconstruction on Si(111) surface

Structure and Stability of Si(114)-(2x1)

STM and RHEED study of the Si(001)-c(8x8) surface