Abstract:Over the last two decades, scanning tunnelling microscopy (STM) has become one of the most important ways to investigate the structure of crystal surfaces. STM has helped achieve remarkable successes in surface science such as finding the atomic structure of Si(111) and Si(001). For high-index Si surfaces the information about the local density of states obtained by scanning does not translate directly into knowledge about the positions of atoms at the surface. A commonly accepted strategy for identifying the atomic structure is to propose several possible models and analyze their corresponding {\em simulated} STM images for a match with the experimental ones. However, the number of good candidates for the lowest-energy structure is very large for high-index surfaces, and heuristic approaches are not likely to cover all the relevant structural models. In this article, we take the view that finding the atomic structure of a surface is a problem of stochastic optimization, and we address it as such. We design a general technique for predicting the reconstruction of silicon surfaces with arbitrary orientation, which is based on parallel-tempering Monte Carlo simulations combined with an exponential cooling. The advantages of the method are illustrated using the Si(105) surface as example, with two main results: (a) the correct single-step rebonded structure [e.g., Fujikawa {\em et al.}, Phys. Rev. Lett. 88, 176101 (2002)] is obtained even when starting from the paired-dimer model [Mo {\em et al.}, Phys. Rev. Lett. 65, 1020 (1990)] that was assumed to be correct for many years, and (b) we have found several double-step reconstructions that have lower surface energies than any previously proposed double-step models.

Study of Metastable Reconstructions of Si(111) Surface by STM

Titanium Self-Intercalation Induced Formation of Orthogonal (1 × 1) Edge/Surface Reconstruction in 1T-Tise2: Atomic Scale Dynamics and Mechanistic Study

STM Study of Si(337) Surface

Lanthanum-induced Quasi-One-dimensional Reconstructions on Si(111)

Scanning Tunneling Microscopy Study of Surface Reconstruction Induced by N Adsorption on Cu（100） Surface

Structural stability and electronic properties of Sr induced (5×4) reconstruction on Si(111) surface

Atomic Structure of Sr-induced Reconstructions on the Si(100) Surface

Reconstruction of silicon surfaces: a stochastic optimization problem

Structure and Stability of Si(114)-(2x1)

Atomic Structure Of The Si(112) 7x1-In Surface

First-Principles Study On Geometric And Electronic Structures Of Si(111)-Root 7 X Root 3-In Surface Reconstruction

Si(313) 12 X 1: Another Metallic Stable Surface Of Silicon Having A Complex Reconstructed Layer

An atomic structural model of (23×23)-R30° reconstruction proposed for 3C–SiC(111) crystallized islands on Si(111) by C60 precursor

STM and RHEED study of the Si(001)-c(8x8) surface

Reconstructions on SrTiO3(111) surface tuned by Ti/Sr deposition

Scanning Tunnelling Microscope Tip-Induced Reconstruction on Si(111) (3) 1/2 ×(3) 1/2 R30°-Ag Surface

Scanning Tunnelling Microscope Tip-Induced Reconstruction On Si(111) Root 3 X Root 30 Degrees-Ag Surface

Scanning tunnelling microscope tip-induced reconstruction on Si(111) √3 × √3 R30°-Ag surface

Direct observation of the Si(110)-(16×2) surface reconstruction by atomic force microscopy

Deciphering the Atomistic Mechanism of Si(111)-7 × 7 Surface Reconstruction Using a Machine-Learning Force Field

Surface Structure of the (3x1) and (3x2) Reconstructions of Ge(113)