Abstract:Over the last two decades, scanning tunnelling microscopy (STM) has become one of the most important ways to investigate the structure of crystal surfaces. STM has helped achieve remarkable successes in surface science such as finding the atomic structure of Si(111) and Si(001). For high-index Si surfaces the information about the local density of states obtained by scanning does not translate directly into knowledge about the positions of atoms at the surface. A commonly accepted strategy for identifying the atomic structure is to propose several possible models and analyze their corresponding {\em simulated} STM images for a match with the experimental ones. However, the number of good candidates for the lowest-energy structure is very large for high-index surfaces, and heuristic approaches are not likely to cover all the relevant structural models. In this article, we take the view that finding the atomic structure of a surface is a problem of stochastic optimization, and we address it as such. We design a general technique for predicting the reconstruction of silicon surfaces with arbitrary orientation, which is based on parallel-tempering Monte Carlo simulations combined with an exponential cooling. The advantages of the method are illustrated using the Si(105) surface as example, with two main results: (a) the correct single-step rebonded structure [e.g., Fujikawa {\em et al.}, Phys. Rev. Lett. 88, 176101 (2002)] is obtained even when starting from the paired-dimer model [Mo {\em et al.}, Phys. Rev. Lett. 65, 1020 (1990)] that was assumed to be correct for many years, and (b) we have found several double-step reconstructions that have lower surface energies than any previously proposed double-step models.

Deciphering the Atomistic Mechanism of Si(111)-7 × 7 Surface Reconstruction Using a Machine-Learning Force Field

Atomistic Mechanism Underlying the Si ( 111 ) − ( 7 × 7 ) Surface Reconstruction Revealed by Artificial Neural-Network Potential

Titanium Self-Intercalation Induced Formation of Orthogonal (1 × 1) Edge/Surface Reconstruction in 1T-Tise2: Atomic Scale Dynamics and Mechanistic Study

First-principles Study of Geometric and Electronic Structures of Si(111)-√7 × √3-in Surface Reconstruction

Reconstruction of silicon surfaces: a stochastic optimization problem

Direct observation of the Si(110)-(16×2) surface reconstruction by atomic force microscopy

Atomic Structure Of The Si(112) 7x1-In Surface

Structure and Stability of Si(114)-(2x1)

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Low-index Mesoscopic Surface Reconstructions of Au Surfaces Using Bayesian Force Fields

Systematic Study of Β-Sic Surface Structures by Molecular-Dynamics Simulations

Structural stability and electronic properties of Sr induced (5×4) reconstruction on Si(111) surface

Stability, mechanisms and kinetics of emergence of Au surface reconstructions using Bayesian force fields

Atomic-scale Modification on Si(111)7×7 Surfaces

Lanthanum-induced Quasi-One-dimensional Reconstructions on Si(111)

Unraveling the atomic structure of the R(15×12) reconstruction of carburized W(110) based on ab initio calculations

A new structural model for the SiC(0001)(3×3) surface derived from first principles studies

Surface reconstruction induced geometries of Si clusters

Study of Metastable Reconstructions of Si(111) Surface by STM

A New Structural Model For The Sic(0001)(3 X 3) Surface Derived From First Principles Studies

La induced Si 3 trimer monolayer on Si(111) surface: an ab initio study