Abstract:A compressed Cs layer embedded in bulk crystal of kagome superconductor, CsV3Sb5, is demonstrated to be an appropriate substrate to fabricate Cs thin films with the face‐centered cubic structure, which is typically realized only under high pressure in bulk Cs. The present results provide a useful guiding principle for introducing significant lattice strain in the homoepitaxial technique. Applying lattice strain to thin films, a critical factor to tailor their properties such as stabilizing a structural phase unstable at ambient pressure, generally necessitates heteroepitaxial growth to control the lattice mismatch with substrate. Therefore, while homoepitaxy, the growth of thin film on a substrate made of the same material, is a useful method to fabricate high‐quality thin films, its application to studying strain‐induced structural phases is limited. Contrary to this general belief, here the quasi‐homoepitaxial growth of Cs and Rb thin films is reported with substantial in‐plane compressive strain. This is achieved by utilizing the alkali‐metal layer existing in bulk crystal of kagome metals AV3Sb5 (A = Cs and Rb) as a structural template. The angle‐resolved photoemission spectroscopy measurements reveal the formation of metallic quantum well states and notable thickness‐dependent quasiparticle lifetime. Comparison with density functional theory calculations suggests that the obtained thin films crystalize in the face‐centered cubic structure, which is typically stable only under high pressure in bulk crystals. These findings provide a useful approach for synthesizing highly strained thin films by quasi‐homoepitaxy, and pave the way for investigating many‐body interactions in Fermi liquids with tunable dimensionality.

Strain-Relief Patterns and Kagome Lattice in Self-Assembled C60 Thin Films Grown on Cd(0001)

"Zigzag" C-60 Chain Arrays

Equilibrium configurations and electronic structure of fullerene ultrathin films on SrTiO3(001) surface

STUDY ON GROWTH OF C 60 MOLECULES ON GaAs(001) SUBSTRATE BY SCANNING TUNNELING MICROSCOPY

Defect-like Structures of Graphene on Copper Foils for Strain Relief Investigated by High-Resolution Scanning Tunneling Microscopy.

Scanning Tunneling Microscopy Of Endohedral Metallofullerene Tb@C-82 On C-60 Film And Si(100) 2 X 1 Surface

Orientational Configurations Of The C-60 Molecules In The (2 X 2) Superlattice On A Solid C-60 (111) Surface At Low Temperature

Visualizing Molecular Orientational Ordering and Electronic Structure in CsnC60 thin films

Equilibrium configurations and electronic structure of Fullerene ultrathin films on SrTiO 3 (001) surface

Equilibrium configurations and electronic structure of fullerene ultrathin films on SrTiO3(0 0 1) surface

Self-assembly of C60 Monolayer on Epitaxially Grown, Nanostructured Graphene on Ru(0001) Surface

Low-Temperature Scanning Tunneling Microscopy/Ultraviolet Photoelectron Spectroscopy Investigation Of Two-Dimensional Crystallization Of C-60: Pentacence Binary System On Ag(111)

Visualizing Molecular Orientational Ordering and Electronic Structure in CsnC60 Fulleride Films

Quasi‐Homoepitaxial Growth of Highly Strained Alkali‐Metal Ultrathin Films on Kagome Superconductors

Growth And Structure Of C(60) Thin-Films On Nacl, Glass And Mica Substrates

Scanning Tunneling Microscopy Of Endohedral Metallofullerene Lu-C-82 On C-60 Film

Strain Superlattices and Macroscale Suspension of Graphene Induced by Corrugated Substrates.

Scanning Tunneling Microscopy of C60 on Graphite

Band structures of strained Kagome lattices

Scanning Tunneling Microscopy Investigation of Substrate-Dependent Adsorption and Assembly of Metallofullerene Gd@C82 on Cu(111) and Cu(100)

Structural Study On C-60 Material