Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates

Study on Micro-Structural Properties of Pbte/Cd0.98zn0.02te (111) Hetero-System Grown by Molecular-Beam Epitaxy

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Elucidating Twinning Mechanisms in CdTe Homoepitaxial Film Growth from Machine Learning Force Field Molecular Dynamics Simulations

The Film/substrate Orientation Relationships of CdTe Grown on Si and GaAs by Low Pressure Metalorganic Chemical Vapour Deposition

Investigation of the CdZnTe (2 1 1) and (1 3 3) films grown on GaAs (2 1 1) controlled by temperature: Experiment and first-principles calculations

Reconstructions and Stabilities of PbTe(1 1 1) Crystal Surface from Experiments and Density-Functional Theory

Growth of Epitaxial CdTe Thin Films on Amorphous Substrates Using Single Crystal Graphene Buffer

Microstructural Properties of Single Crystalline Pbte Thin Films Grown on Baf2(111) by Molecular Beam Epitaxy

Study on the Growth of A CdTe Epilayer on (100) and (111) Oriented GaAs by MOCVD

Study of Growth of [111]-Oriented CdTe Thin Films by MBE

Growth of Topological Crystalline Insulator SnTe Thin Films on Si(111) Substrate by Molecular Beam Epitaxy

Growth of (111)-Orientated GdTe and TmTe Thin Films by Van Der Waals Molecular Beam Epitaxy

Study of Monocrystalline CdTe films grown by ICB epitaxy

Growth of Cdte-Films on Gaas by Ionized Cluster Beam Epitaxy

Growth of Hg0.7Cd0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy

Observation of regular defects formed on the surface of PbTe thin films grown by molecular beam epitaxy

Epitaxial Growth of Lattice-Matched InSb/CdTe Heterostructures on the GaAs(111) Substrate by Molecular Beam Epitaxy

MBE Growth and Characterization of Strained Hg Te（111） Films on CdTe/GaAs

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

X-ray Double-Crystal Diffraction Studies of CdTe/GaAs Heteroepitaxial Layers