Abstract:Traditionally, a high-quality CdTe film can only be grown on a single crystal substrate with a small lattice mismatch. Herein, we report the epitaxy of CdTe films on monolayer single crystal graphene buffered amorphous SiO2/Si(100) substrates, despite a 86% lattice mismatch between CdTe(111) and graphene. X-ray pole figure, electron backscatter diffraction mapping and transmission electron microscopy all confirm that the epitaxial CdTe films are composed of two domains: the primary and the Σ3 twin. The crystal quality of films is shown to improve as the post-deposition annealing temperature increases. However, the rotational misalignment in CdTe remains large even after annealing. Through density functional theory calculations on the charge transfer distribution at the interface of CdTe and graphene, it is found that the interface is dominated by the weak van der Waals interaction, which explains the large spread of in-plane orientation in CdTe films. Furthermore, the rotational misalignment in graphene itself is also confirmed to produce the large in-plane orientation spread in CdTe films. Although imperfect in epitaxy quality, this work demonstrates that monolayer single crystal graphene can buffer amorphous substrates for growing epitaxial films, and hence hints an opportunity for developing advanced thin film devices using graphene as a template.

Study of Monocrystalline CdTe films grown by ICB epitaxy

Growth of Cdte-Films on Gaas by Ionized Cluster Beam Epitaxy

A Study of Rheed Pattern from the Epitaxial Growth of Si-Ge Crystal

Study of Growth of [111]-Oriented CdTe Thin Films by MBE

Growth of (111)cdte on a Buffer Layer of (100)znse by MBE

Microstructural Properties of Single Crystalline Pbte Thin Films Grown on Baf2(111) by Molecular Beam Epitaxy

Growth of Topological Crystalline Insulator SnTe Thin Films on Si(111) Substrate by Molecular Beam Epitaxy

Study on Micro-Structural Properties of Pbte/Cd0.98zn0.02te (111) Hetero-System Grown by Molecular-Beam Epitaxy

Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates

X-ray Double-Crystal Diffraction Studies of CdTe/GaAs Heteroepitaxial Layers

Study on the Growth of A CdTe Epilayer on (100) and (111) Oriented GaAs by MOCVD

Texture-tuned Growth of CdTe Thin Films by Closed-Space Sublimation Technique

Studies of Structure,Composition and Photoelectric Properties of CdTe Thin Film Grown by Vacuum Sublimation

Growth of Epitaxial CdTe Thin Films on Amorphous Substrates Using Single Crystal Graphene Buffer

Effects of Growth Temperature and off Oriented (100) Si Substrate on Properties of CdTe Film Grown by MOCVD

Physical properties of CdTe grown on Si by low pressure metalorganic chemical vapour deposition

The Film/substrate Orientation Relationships of CdTe Grown on Si and GaAs by Low Pressure Metalorganic Chemical Vapour Deposition

Investigation of the CdZnTe (2 1 1) and (1 3 3) films grown on GaAs (2 1 1) controlled by temperature: Experiment and first-principles calculations

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

Epitaxial CdTe Thin Films on Mica by Vapor Transport Deposition for Flexible Solar Cells

Reconstructions and Stabilities of PbTe(1 1 1) Crystal Surface from Experiments and Density-Functional Theory