Abstract:In this paper, we present a study on the direct growth of Hg0.7Cd0.3Te thin films on layered transparent van der Waals mica (001) substrates through weak interface interaction through molecular beam epitaxy. The preferred orientation for growing Hg0.7Cd0.3Te on mica (001) substrates is found to be the (111) orientation due to a better lattice match between the Hg0.7Cd0.3Te layer and the underlying mica substrate. The influence of growth parameters (mainly temperature and Hg flux) on the material quality of epitaxial Hg0.7Cd0.3Te thin films is studied, and the optimal growth temperature and Hg flux are found to be approximately 190 °C and 4.5 × 10−4 Torr as evidenced by higher crystalline quality and better surface morphology. Hg0.7Cd0.3Te thin films (3.5 μm thick) grown under these optimal growth conditions present a full width at half maximum of 345.6 arc sec for the X-ray diffraction rocking curve and a root-mean-square surface roughness of 6 nm. However, a significant number of microtwin defects are observed using cross-sectional transmission electron microscopy, which leads to a relatively high etch pit density (mid-107 cm−2) in the Hg0.7Cd0.3Te thin films. These findings not only facilitate the growth of HgCdTe on mica substrates for fabricating curved IR sensors but also contribute to a better understanding of growth of traditional zinc-blende semiconductors on layered substrates.

Effects of Growth Temperature and off Oriented (100) Si Substrate on Properties of CdTe Film Grown by MOCVD

Physical properties of CdTe grown on Si by low pressure metalorganic chemical vapour deposition

Study of Growth of [111]-Oriented CdTe Thin Films by MBE

Characteristics of CdTe Grown on Si by Low Pressure Metalorganic Chemical Vapor Deposition

Study on the Growth of A CdTe Epilayer on (100) and (111) Oriented GaAs by MOCVD

The Film/substrate Orientation Relationships of CdTe Grown on Si and GaAs by Low Pressure Metalorganic Chemical Vapour Deposition

Studies of Structure,Composition and Photoelectric Properties of CdTe Thin Film Grown by Vacuum Sublimation

Texture-tuned Growth of CdTe Thin Films by Closed-Space Sublimation Technique

Microstructure and optical properties of CdTe thin films prepared by close spaced sublimation method at various growth temperatures

Microstructural Properties of Single Crystalline Pbte Thin Films Grown on Baf2(111) by Molecular Beam Epitaxy

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

Study of Structural, Electrical and Optical Properties of (200)-Oriented CdTe Thin Films Depending on the Post-deposition Low Temperature

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)

Study of Monocrystalline CdTe films grown by ICB epitaxy

Growth of Hg0.7Cd0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy

Temperature-dependent Optical Properties of Pb1−xMnxSe Films Epitaxially Grown on Zn0.04Cd0.96Te Substrates

Optical and Electrical Properties of CdS Films

Growth of Cdte-Films on Gaas by Ionized Cluster Beam Epitaxy

Analysis of Pressure Effect on the Growth of Cdte by Mocvd

Structure and Optical Properties of Te-doped CdTe Thin Films

Textured CdTe Thin Films on Silicon and Sapphire Substrates: Thermal Vapor Deposition and Structural Characterization