Abstract:The closed-space sublimation(CSS)technology is used to prepare CdTe thin films,whose structure and characteristics are closely dependent on the whole deposition process in closed-space sublimation.Because CSS process may be affected by many factors,it is difficult to control the process.Therefore,it is necessary to study the heat exchange and mass transportation in CSS process.In the paper,the physical mechanism of CSS is analyzed and through measuring the temperature distribution and investigating curves of increasing temperature the temperature distribution,the increasing temperature curve have been optimized and the effects of pressure on the structural properties of CdTe thin films analyzed.The results indicate that the samples deposited in different pressures are all of the cubical structure of CdTe and still show the diffraction peaks of CdS and SnO_2:F.Following the increasing of gas pressure,the crystal size of CdTe minutes and the rate of the transparency of the thin film goes down and the absorption side faces the short-wave direction. The polyerystalline thin films of higher quality are depositing in 4 minutes under the depositing condition. with the substrate temperature being 500℃ and source temperature being 620℃.

Analysis of Pressure Effect on the Growth of Cdte by Mocvd

Study on the Growth of A CdTe Epilayer on (100) and (111) Oriented GaAs by MOCVD

Modelling of Growth Rate Uniformity of CdTe Epilayer by MOCVD

Effects of Growth Temperature and off Oriented (100) Si Substrate on Properties of CdTe Film Grown by MOCVD

Analysis of the Combined Effect of Mass Transfer and Decomposition Kinetics on the Growth Rates of CdTe by MOCVD

Growth of (111)cdte on a Buffer Layer of (100)znse by MBE

Thermodynamic Analysis of the Growth of Hg1−xCdxTe by MOCVD

Study of Growth of [111]-Oriented CdTe Thin Films by MBE

Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2 gas mixture

Physical properties of CdTe grown on Si by low pressure metalorganic chemical vapour deposition

Effect of Increasing Temperature Process and Atmosphere Pressure on CdTe Oolv Crvstalline Thin Films in Close-Spaced Sublimation

Studies of Structure,Composition and Photoelectric Properties of CdTe Thin Film Grown by Vacuum Sublimation

Characteristics of CdTe Grown on Si by Low Pressure Metalorganic Chemical Vapor Deposition

Influence of Growth Pressure of A Gan Buffer Layer on the Properties of Mocvd Gan

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

Effects of growth pressure on the characteristics of the -Ga<sub>2</sub>O<sub>3</sub> thin films deposited on (0001) sapphire substrates

Effect of Reactor Pressure on Qualities of Gan Layers Grown by Hydride Vapour Phase Epitaxy

X-ray Double-Crystal Diffraction Studies of CdTe/GaAs Heteroepitaxial Layers

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density

The Influence of Reactor Pressure on Qualities of Gan Layers Grown by Hydride Vapor Phase Epitaxy