Abstract:The lattice-structure-mismatched CdTe/PbTe heterostructures are emerging materials with unique properties and promising applications in midinfrared optoelectronics and spintronics. High-density two-dimensional electron gas at the metastable twisted interfaces of CdTe/PbTe (111) is investigated experimentally and theoretically. CdTe thin films grown on PbTe(111) using molecular-beam epitaxy are found to have high electron mobilities and carrier concentrations from Hall-effect measurements: 2.02 x 10(4) cm(2)/Vs and 4.5 x 10(18) cm(-3) at 2 K, and 6.70 x 10(3) cm(2)/Vs and 6.0 x 10(19) cm(-3) at 77 K. Our density-functional theory modeling reveals that the epitaxially grown CdTe/PbTe (111) heterostructures form metastable twisted interfaces that exhibit unusual structural and electronic properties: (1) The PbTe epilayer on CdTe(111) substrates is structurally highly distorted from the rocksalt structure within the first similar to 4.5 nm from the interface, which is caused by the stereochemical activity of the Pb s(2) lone pair. (2) The CdTe eplilayer on the PbTe(111) forms spontaneously a high density two-dimensional electron gas (2DEG) over 10(13) cm(-2) near the interface, without the need for doping, which explains the experimentally observed high carrier density and mobility. It is a much simpler heterostructure yet able to offer high electron mobility comparable to and one or two order magnitude higher sheet carrier density than the best achieved values for those of Si and II-VI based quantum well structures relying on modulation doping.

Physical properties of CdTe grown on Si by low pressure metalorganic chemical vapour deposition

Characteristics of CdTe Grown on Si by Low Pressure Metalorganic Chemical Vapor Deposition

Effects of Growth Temperature and off Oriented (100) Si Substrate on Properties of CdTe Film Grown by MOCVD

The Film/substrate Orientation Relationships of CdTe Grown on Si and GaAs by Low Pressure Metalorganic Chemical Vapour Deposition

Study of Growth of [111]-Oriented CdTe Thin Films by MBE

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

Study on the Growth of A CdTe Epilayer on (100) and (111) Oriented GaAs by MOCVD

Study on Micro-Structural Properties of Pbte/Cd0.98zn0.02te (111) Hetero-System Grown by Molecular-Beam Epitaxy

Optical and Electronic Characterization on HgCdTe Materials

Molecular Beam Epitaxy Growth Of Cdte On Si(211)

Study of Monocrystalline CdTe films grown by ICB epitaxy

Study of Photoreflectance Spectroscopy in Semiconductor Cd1-xMnxTe/CdTe Superlattices with High Compositions

Molecular Beam Epitaxy of Hgcdte on (211)B Cdznte

Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density

MBE growth of (111) CdTe on Zn-stabilized and Se-stabilized (100) ZnSe

In-situ ellipsometric study on composition-dependent short-wave HgCdTe in the process of molecular beam epitaxy growth

MBE HgCdTe on Si and GaAs Substrates

Microstructure and optical properties of CdTe thin films prepared by close spaced sublimation method at various growth temperatures

The Study of HgCdTe on Si by MBE

Heteroepitaxy of Cdte on Tilting Si(211) Substrates by Molecular Beam Epitaxy