Abstract:This paper systematically reviews the progress on the HgCdTe (MCT) material deposition via molecular-beam epitaxy (MBE) and previously reported atomistic approaches used to model the MCT epitaxy. The structure design and fabrication of the infrared (IR) detection systems require highly crystalline MCT films. The state-of-the-art of the MBE growth processes of Hg1−xCdxTe films over Si, GaAs, GaSb, and CdZnTe substrates are reported here from an atomistic simulation perspective. The most advanced in-house-developed kinetic Monte Carlo (kMC) technique, coupled with the geometry of the MBE reactor (implemented in the TNL-EpiGrowTM simulator) is exploited to reproduce real-time MBE experiments. The ability to track each atom involved in the adsorption, diffusion, and desorption processes over the lattice provides deeper insights. The ability to map various defects quantitatively and qualitatively during the growth process in a layer-by-layer and island mode helps to provide a proper understanding of their formation. The TNL-EpiGrowTM simulator provides an innovative and cost-effective solution for the epitaxial growth processes associated with MBE, CVD, and MOCVD reactors for most semiconductors. The types of defects, their position over the lattice, layer-by-layer strain, surface roughness, lattice parameters are easily extractable and provide an unmatched solution. However, it is very difficult to realize similar solutions through sophisticated instruments. Si, GaAs, GaSb, and CdZnTe substrates have been used to reproduce the MBE process of Hg1−xCdxTe (x ≈ 0.55). The vacancies and dislocation densities are reported here to characterize the cases of MCT epitaxy on the four different substrates. The growth rates of CdTe and MCT have been benchmarked against the experimental data (Pacuski et al. in Cryst Growth Des 17(6):2987, 2017; Wijewamauriya et al. in Appl Phys Lett 51(24):2025, 1987). The output results revealed that CdZnTe is the most attractive substrate choice but, due to its technological challenges, GaSb can replace it and is the most suitable option for the growth of Hg1−xCdxTe as compared to Si and GaAs substrates under similar conditions. The results reported here also support the experimental findings (Gu et al. in J Cryst Growth 468:216, 2017). The dislocations and vacancies generated in the GaSb substrate are comparable to those in the CdZnTe substrate.

Modelling of Growth Rate Uniformity of CdTe Epilayer by MOCVD

Analysis of the Combined Effect of Mass Transfer and Decomposition Kinetics on the Growth Rates of CdTe by MOCVD

Study on the Growth of A CdTe Epilayer on (100) and (111) Oriented GaAs by MOCVD

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Analysis of Pressure Effect on the Growth of Cdte by Mocvd

Growth Rate and Surface Morphology as A Function of Growth Parameter for GaN MOCVD

Numerical Simulation and Analytical Models for Thin Film CdTe Layers Deposited by an Inline AP-metalorganic Chemical Vapour Deposition Process

Optimization Theory and Application of Epitaxial Layer Thickness Uniformity in Vertical MOCVD Chamber with Multiple MO Nozzles

Modeling Analysis of the Mocvd Growth of Zno Film

Kinetic model of II-VI(001) semiconductor surfaces: Growth rates in atomic layer epitaxy

Elucidating Twinning Mechanisms in CdTe Homoepitaxial Film Growth from Machine Learning Force Field Molecular Dynamics Simulations

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

A one-dimensional model for the growth of CdTe quantum dots on Si substrates

Convective Mass Transfer Effect on Short-Time Liquid Phase Epitaxial Growth

Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer

Effects of Growth Temperature and off Oriented (100) Si Substrate on Properties of CdTe Film Grown by MOCVD

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single‐Wafer Reactor through Orthogonal Test

Defect Analysis of MBE Reactor-Grown HgCdTe on Si, GaAs, GaSb, and CZT Substrates Through the TNL-Epigrow Simulator

Effect of Growth Conditions and Reactor Configuration on the Growth Uniformity of Large-Scale Graphene by Chemical Vapor Deposition

Kinetic Monte Carlo method for epitaxial 3C-SiC (0001) growth on vicinal surfaces