Kinetic Monte Carlo method for epitaxial 3C-SiC (0001) growth on vicinal surfaces

Yuan Li,Xuejiang Chen,Wensen Ai

DOI: https://doi.org/10.1016/j.commatsci.2021.110607

IF: 3.572

2021-09-01

Computational Materials Science

Abstract:<p>A kinetic Monte Carlo model has been developed to predict island nucleation and step flow growth on vicinal surface during epitaxial growth of 3C-SiC. In the model, the crystal lattice is represented by a structured mesh which retains fixed atom positions and bond partners of the 3C-SiC crystal lattice. The events considered in the model are the deposition, evaporation and diffusion of atoms, and the attachment and detachment of adsorbed atoms. Both the incorporation energy barrier and Ehrlich-Schwoebel (ES) barrier are taken into account in the model when an adatom migrates to a step or island. The growth parameters such as growth temperature, coverages and terrace width can be selected freely, and the cross process of step flow growth and island nucleation can be simulated. The simulation results show that lower growth temperatures lead to a larger number of islands forming on the vicinal surfaces. There is also an observed coupling between island nucleation and steps at higher temperature. For smaller coverages, the islands and step patterns grow independently, and the steps and islands begin eventually to coalesce over the time. Furthermore, a decrease in terrace width leads to adatoms preferentially attaching to steps and the system to go to a step flow growth system. The results are consistent with predictions for the case of the epitaxial growth on vicinal surfaces.</p>

materials science, multidisciplinary

What problem does this paper attempt to address?

### Problems Addressed by the Paper

The paper primarily investigates the island nucleation and step-flow growth mechanisms of 3C-SiC (0001) thin films on inclined surfaces. Specifically, the authors developed a kinetic Monte Carlo (KMC) model to predict the formation of island structures and step-flow behavior during the growth process.

#### Research Background
- **Material Properties**: SiC is a wide bandgap semiconductor with excellent mechanical properties, chemical inertness, thermal stability, and good electrical conductivity, making it suitable for microelectronic and optoelectronic devices in high-temperature, high-pressure, and high-power environments.
- **Growth Challenges**: Growing high-quality, large-size 3C-SiC on inclined surfaces (i.e., surfaces with an inclination angle) remains challenging because factors such as growth temperature, SiC and C surface diffusion, adsorption, and desorption kinetics affect the growth quality.

#### Research Methods
- **Kinetic Monte Carlo Model**: This model considers events such as deposition, evaporation, diffusion, and the attachment and detachment of adsorbed atoms. The model also includes the Ehrlich-Schwoebel barrier and adsorption energy barriers to better describe the evolution of steps and island structures.
- **Simulation Parameters**: Parameters such as growth temperature, coverage, and terrace width can be freely chosen, and the model can simulate the crossover process between step-flow growth and island nucleation.

#### Main Findings
- **Temperature Effect**: Lower growth temperatures lead to the formation of more island structures on inclined surfaces; at higher temperatures, there is a coupling phenomenon between steps and island structures.
- **Coverage Effect**: At lower coverage, island structures and step patterns grow independently; at higher coverage, island nucleation and step-flow growth interact with each other.
- **Terrace Width Effect**: Decreasing terrace width leads to adsorbed atoms preferentially attaching to steps, causing the system to favor step-flow growth; larger terrace widths result in the formation of more island structures.

Through these studies, the authors aim to gain a deeper understanding of the growth mechanisms of 3C-SiC on inclined surfaces and provide theoretical support and technical guidance.