Abstract:Abstract Silicon carbide (SiC) has been widely utilized in semiconductor industry for the development of high power electrical devices. Using chemical vapor deposition (CVD) to grow a thin epitaxial layer onto SiC substrate surface with orderly lattice arrangement, good surface morphology and low doping concentration is required. During epitaxial growth, the high reaction temperature and its distribution are generally difficult to measure and will affect the properties of epitaxial growth layer. This study presents a thermal-field testing method based on process temperature control rings (PTCRs) to measure the high temperature distribution inside the epitaxial growth reaction chamber, and to study the effects of reaction chamber structure and epitaxial growth parameters on the quality of epitaxial layer. The measurement accuracy of PTCRs was characterized using silicon melting experiments and the measuring principle of PTCRs was presented. The thermal field of the reaction chamber was then numerically simulated and compared with experimental results. The experiment results exhibit a temperature gradient of less than 0.4 °C/mm on surface, indicating good temperature uniformity. Epitaxial growth is an essential process in the fabrication of SiC devices, as it enables the production of layers with precise doping density and thickness. The SiC epitaxial growth experiments were conducted to study the effects of gas flow ratio and doping flow ratio of three inlet flow channels on the thickness and doping concentration distributions. The results demonstrated that the non-uniformity of thickness and doping concentration of epitaxial layer was below 1.5 % and 4.0 %, respectively.

Growth Mechanism and Dislocation Characterization of Silicon Carbide Epitaxial Films

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Multiplication of Basal Plane Dislocations via Interaction with c-Axis Threading Dislocations in 4H-SiC

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System

Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer

Layered Growth Modelling of Epitaxial Growth Processes for SiC Polytypes

Growth of SiC Buffers for Strained Si Film Epitaxy

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Characterization and growth of germanium-silicon epitaxial layers by UHV/CVD

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Multi-length Scale Monte Carlo Simulation of the Growth Process of SiC Film by Chemical Vapor Deposition

Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide

A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases

Anisotropy of the solid-state epitaxy of silicon carbide in silicon

The effects of carbon incorporation during GSMBE of Si1−yCy and Si1−x−yGexCy: growth dynamics and segregation

Effect of Growth Rate on Morphology Evolution of 4H-Sic Thick Homoepitaxial Layers

Growth mechanism for epitaxial graphene on vicinal 6H-SiC(0001) surfaces