Abstract:In this paper, we present a study on the direct growth of Hg0.7Cd0.3Te thin films on layered transparent van der Waals mica (001) substrates through weak interface interaction through molecular beam epitaxy. The preferred orientation for growing Hg0.7Cd0.3Te on mica (001) substrates is found to be the (111) orientation due to a better lattice match between the Hg0.7Cd0.3Te layer and the underlying mica substrate. The influence of growth parameters (mainly temperature and Hg flux) on the material quality of epitaxial Hg0.7Cd0.3Te thin films is studied, and the optimal growth temperature and Hg flux are found to be approximately 190 °C and 4.5 × 10−4 Torr as evidenced by higher crystalline quality and better surface morphology. Hg0.7Cd0.3Te thin films (3.5 μm thick) grown under these optimal growth conditions present a full width at half maximum of 345.6 arc sec for the X-ray diffraction rocking curve and a root-mean-square surface roughness of 6 nm. However, a significant number of microtwin defects are observed using cross-sectional transmission electron microscopy, which leads to a relatively high etch pit density (mid-107 cm−2) in the Hg0.7Cd0.3Te thin films. These findings not only facilitate the growth of HgCdTe on mica substrates for fabricating curved IR sensors but also contribute to a better understanding of growth of traditional zinc-blende semiconductors on layered substrates.

Growth of Cdte-Films on Gaas by Ionized Cluster Beam Epitaxy

Study of Monocrystalline CdTe films grown by ICB epitaxy

Study of Growth of [111]-Oriented CdTe Thin Films by MBE

Growth of (111)cdte on a Buffer Layer of (100)znse by MBE

X-ray Double-Crystal Diffraction Studies of CdTe/GaAs Heteroepitaxial Layers

Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Growth of Znse Films on Gaas by Ionized Cluster Beam Epitaxy

Study on the Growth of A CdTe Epilayer on (100) and (111) Oriented GaAs by MOCVD

Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates

Microstructural Properties of Single Crystalline Pbte Thin Films Grown on Baf2(111) by Molecular Beam Epitaxy

Molecular Beam Epitaxy of Hgcdte on (211)B Cdznte

Growth of Epitaxial CdTe Thin Films on Amorphous Substrates Using Single Crystal Graphene Buffer

Growth and Characterization of Liquid-Phase Epitaxial Hg1-Xcdxte Films

Investigation of the CdZnTe (2 1 1) and (1 3 3) films grown on GaAs (2 1 1) controlled by temperature: Experiment and first-principles calculations

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

The Film/substrate Orientation Relationships of CdTe Grown on Si and GaAs by Low Pressure Metalorganic Chemical Vapour Deposition

MBE growth of (111) CdTe on Zn-stabilized and Se-stabilized (100) ZnSe

Growth of Ge films by cluster beam deposition

MBE Growth and Characterization of Strained Hg Te（111） Films on CdTe/GaAs

Texture-tuned Growth of CdTe Thin Films by Closed-Space Sublimation Technique

Growth of Hg0.7Cd0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy