Abstract:Gallium arsenide (GaAs) materials have the advantages of high electron mobility, electron saturation drift rate, and other irreplaceable semiconducting properties. They play an important role in the electronics, solar and other fields. However, during GaAs film sedimentary growth, As atoms can undergo segregation to form As8 clusters because of the influence of external factors, which affect the surface morphology and internal structure of these films. In this study, a series of investigations on the deposition and growth of GaAs crystal films were performed. Additionally, the deposition and growth of GaAs thin films were simulated using molecular dynamics. The influence of As8 clusters on the surface morphology and internal structure of GaAs films at different incidence angles, velocities and substrate temperatures was studied by using "defect analysis technology" and "diamond structure identification" in open source software, along with surface roughness and radial distribution function. Results show that with increasing incident angle, the number of As8 clusters decreases and film density increases. Increasing incident velocity increases the irregular movement of As8 clusters in air, and their deposition on the film surface affects the morphology of the film, the surface roughness increases first and then decreases. Additionally, we investigated the effect of different substrate temperatures on the film surface. Results show that at a substrate temperature of 1173 K, the number of As8 clusters in the film decreases or the As8 clusters disappear, heterogeneous nucleation occurs in the film, and the crystallization rate increases. Although the dislocation line associated with nucleation may affect the mechanical and optical properties of the film, it considerably reduces the annealing effort after the deposition and growth.

TEM Study of the Structure of GaAs on Vicinal Si (001) Surface Grown by MBE

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

quantum well structures grown by molecular beam epitaxy

Tem Observation of Gaas on Si(100) Grown by Mbe

Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs(110) surfaces grown by molecular beam epitaxy

Study on Micro-Structural Properties of Pbte/Cd0.98zn0.02te (111) Hetero-System Grown by Molecular-Beam Epitaxy

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Study of Si and Ge growth on Si(100) surface

Interface Studies of Molecular Beam Epitaxy (MBE) Grown ZnSe-GaAs Heterovalent Structures

Electron microscopy analysis of GaN/GaAs cubic heterostructure grown by MBE

Step Bunching Formation On Gaas(001) Introduced By Surface Reconstruction

Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates

Single-Crystalline Si1-Xgex (X=0.5 Similar To 1) Thin Films On Si (001) With Low Threading Dislocation Density Prepared By Low Temperature Molecular Beam Epitaxy

Study of Monocrystalline Structure of GaAs/Si Grown by VPE

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

STUDY ON GROWTH OF C 60 MOLECULES ON GaAs(001) SUBSTRATE BY SCANNING TUNNELING MICROSCOPY

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

Effects of As8 structure formation on the surface morphology and internal microstructure of GaAs thin films

Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility