Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Study of Monocrystalline Structure of GaAs/Si Grown by VPE

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Preparation and characterization of GaP/Si heterojunction

TEM Study of the Structure of GaAs on Vicinal Si (001) Surface Grown by MBE

SIMS and XPS studies of GaN epilayers grown on Si substrates

Quasi-van der Waals Epitaxial Growth of γ'-GaSe Thin Films on GaAs(111)B Substrates

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Structural Study Of Chemical Vapor Deposition Of Si On Gan

Molecular Beam Epitaxy Growth of Gaasbi/Gaas/Algaas Separate Confinement Heterostructures

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Controllable Growth of Vertical Heterostructure GaTe(x)Se(1-x)/Si by Molecular Beam Epitaxy.

Investigation of crystallographic tilting in GaSb/GaAs heteroepitaxial structure by high-resolution X-ray diffraction

Growth and characterization of compound semiconductor nanowires on Si

Growth and Electron Microscopy Study of Gan/Mgal2o4 Heterostructures

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Epitaxial growth of GaN film on Si substrate