Abstract:The electronic structure around a single As antisite in GaAs is investigated in bulk and near the surface both in the stable and the metastable atomic configurations. The most characteristic electronic structures of As antisite is the existence of the localized p-orbitals extending from the As antisite. The major component of the highest occupied state on As antisite in the stable configuration is s-orbital connecting with neighboring As atoms with nodes whereas that in the metastable configuration is p-orbital connecting without nodes. Localized p-orbitals on the surrounding As atoms around the As antisite exist in every configuration of As antisite. Such features are retained except the case of the As antisite located just in the surface layer in which the midgap level is smeared into the conduction band and no localized states exist near the top of the valence band. Scanning tunneling microscopic images of defects observed in low-temperature grown GaAs, possibly assigned as As antisite, the origin of the metastability, and the peculiarity of the defects in the surface layer are discussed.

What problem does this paper attempt to address?

### Problems the paper attempts to solve This paper aims to explore the electronic structure of As antisite defects in GaAs crystals, especially the characteristics under stable and metastable atomic configurations in the bulk and near the surface. Specifically, the core research problems include: 1. **Electronic structure of As antisite defects**: Through first - principles calculations, the author analyzes in detail the electronic structure of As antisite defects at different positions (in the bulk and near the surface), especially the characteristics of the highest occupied state. 2. **Differences between stable and metastable states**: The research compares the differences in the electronic structures of As antisite defects in stable and metastable states, especially the existence of local p - orbitals and their influence on the electronic states. 3. **Influence of surface effects on defects**: When As antisite defects are located in the surface layer, their electronic structures change significantly. In particular, the mid - gap states will disperse into the conduction band, resulting in different energy levels near the surface from those in the bulk. 4. **Comparison between STM image simulation and experiment**: Through theoretical simulation of scanning tunneling microscope (STM) images, different defect contrasts observed in GaAs samples grown at low temperatures are verified and explained, and the relationships between these defects and EL2 centers are discussed. 5. **Properties of EL2 centers**: The research explores the stability, photo - quenching effect of EL2 centers and their electronic structure changes in different states, further understanding the physical mechanisms of EL2 centers. ### Key findings - **Differences in electronic structures between stable and metastable states**: The highest occupied state in the stable state is mainly composed of s - orbitals, while in the metastable state it is mainly composed of p - orbitals. - **Influence of surface effects on electronic structures**: When As antisite defects are located in the surface layer, their electronic structures change significantly, resulting in the disappearance of mid - gap states and no longer the existence of local states. - **Explanation of STM images**: Through theoretical simulation, different defect contrast sizes observed in experiments are explained, and these contrasts are related to the distribution of defects at different depths. - **Properties of EL2 centers**: Through theoretical calculations and experimental comparisons, the atomic structure of EL2 centers and their electronic structure changes in different states are further confirmed. In general, through detailed theoretical calculations and experimental comparisons, this paper deeply explores the electronic structure of As antisite defects in GaAs crystals and their relationships with EL2 centers, providing an important basis for understanding the physical mechanisms of such defects.

The electronic structure around As antisite near (110) surface of GaAs

Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs(110) surfaces grown by molecular beam epitaxy

Antisite Defects in SiAlAs/GaAs Modulation‐Doped Superlattices

Large-scale spin-polarized DFT calculation of electronic properties of GaAs with defects

Dipole coupling induced magnetic ordering in an ensemble of nanostructured islands

LOCAL ELECTRONIC-STRUCTURES OF THE NATIVE DEFECTS IN MODULATION-DOPED ALAS/GAAS SUPERLATTICES

Reconfiguration of GaAs (110) surface with the adsorption of Xe atoms

Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs

Spatially resolved electronic structure of an isovalent nitrogen center in GaAs

Electronic Properties of Vacancy‐Induced Structures in AlAs/GaAs Superlattices

Atomic and Electronic Structures of Oxides on III-V Semiconductors :

Electronic-Structure of Neutral and Charged Vacancies in Gaas

Mapping the wavefunction of transition metal acceptor states in the GaAs surface

First-principles Study of the Effect of BiGa Heteroantisites in GaAs:Bi Alloy

Nonmetallic Behavior of Cs/GaAs(110)

Adsorption, Segregation and Magnetization of a Single Mn Adatom on the GaAs (110) Surface

N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

Chemical Bonding and Electronic Properties of SeS2-treated GaAs(100)

Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams

Spectroscopic Properties of Mixed Gallium Arsenide Tetramers: GaAs3±, GaAs3, Ga3As±, and Ga3As

The Nature of the Si Impurity in Ultrathin AlAs/GaAs Superlattices