Abstract:Motivated by recent experimental realization of single-layer α-Ga2S3 [Zheng et al., Adv. Funct. Mater. 31, 2008307(2021)], by using first principles calculations, we systematically investigated the structural, electronic and magnetic properties of single-layer α-Ga2S3 with intrinsic point defects. Although it is a binary semiconductor, its point defects properties are complicated, since there are nonequivalent Ga and S atomic sites in this compound. The most energetically stable vacancy and interstitial defect are VS2 and Si1 for the entire sulfur chemical potential range, while the most energetically favorable antisite defect is dependent on the sulfur chemical potential, such as GaS2 under S-poor condition and SGa1 (SGa2) under S-rich condition. The sulfur vacancy defects (VS1, VS2 and VS2) have induced spin-degenerated defect states in the band gap or the valence band edge, while the gallium vacancy defects (VGa1, and VGa2) have spin-polarized defect states in the band gap or valence band edge with the magnetic moment of 1.30 μB and 1.21μB per defect. The interstitial defects (Gai1, Si1 and Si2) can generate spin-degenerated in-gap defect states. The antisite defects (GaS1, GaS2, GaS3, SGa1, and SGa2) have spin-polarized in-gap defect states with weak magnetic moments of 0.70 μB, 0.69μB, 0.64μB, 0.66μB and 0.65μB per defect. Besides, the origin of the defect states and magnetic moments are examined in detail. These findings are helpful for understanding the defect properties of two dimensional IIIA-VIA binary chalcogenide Ga2S3 and improving its technological applications.

Antisite Defects in SiAlAs/GaAs Modulation‐Doped Superlattices

LOCAL ELECTRONIC-STRUCTURES OF THE NATIVE DEFECTS IN MODULATION-DOPED ALAS/GAAS SUPERLATTICES

The Nature of the Si Impurity in Ultrathin AlAs/GaAs Superlattices

Vacancies and antisites investigation at InAlAs/InGaAs hetero-interface: A first-principles study

Electronic Properties of Vacancy‐Induced Structures in AlAs/GaAs Superlattices

Local Density of States of Silicon Impurity in Lightly and Heavily Doped AlAs/GaAs Superlattices

An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory

First-principles Study of the Effect of BiGa Heteroantisites in GaAs:Bi Alloy

The electronic structure around As antisite near (110) surface of GaAs

First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice

Electronic Structures of Gaas/Alas Lateral Superlattices

Large-scale spin-polarized DFT calculation of electronic properties of GaAs with defects

Defects and Dopants in Zinc-Blende Aluminum Arsenide: a First-Principles Study

Electronic states in GaAs-AlAs short-period superlattices: energy levels and symmetry

Antisite Defect SiC as a Source of the DI Center in 4H‐SiC

1.3-Mu M Inas/Gaas Quantum Dots Grown On Si Substrates

Complicated point defects in monolayer Ga2S3: stability, midgap states and magnetism

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

MICROSTRUCTURES AND STRAIN RELAXATION IN MODULATION-DOPED <font>Al</font><sub>x</sub><font>Ga</font><sub>1-x</sub><font>N</font>/<font>GaN</font> HETEROSTRUCTURES

Investigation on Influence of Antisite Defects on Electronic Structure and Optical Properties of Silicon Carbide Nanotube

Valence Band Structures of Gaas/Alas Lateral Superlattices