Abstract:Recently, an atomic-scale two-dimensional silicon carbide monolayer has been synthesized {[}Polley \emph{et al., }Phys. Rev. Lett. \textbf{130},076203 (2023){]} which opens up new possibilities for developing next-generation electronic and optoelectronic devices. Our study predicts the pristine SiC monolayer to have an ``indirect'' band gap of 3.38 eV $(K\rightarrow M)$ and a ``direct'' band gap of 3.43 eV $(K\rightarrow K)$ calculated using the HSE06 functional. We performed a detailed investigation of the various possible defects (i.e., vacancies, foreign impurities, antisites, and their various combinations) on the structural stability, electronic, and optical properties of the SiC monolayer using a first-principles based density-functional theory (DFT) and molecular dynamics (MD) simulations. A number of physical quantities such as the formation energy, electronic band gap, and the effective masses of charge carriers, have been calculated. We report that the SiC monolayer has a very low formation energy of 0.57 eV and can be stabilized on TaC \{111\} film by performing the surface slab energy and interfacial adhesion energy calculations. Nitrogen doping is predicted to be the most favorable defect in silicon carbide monolayer due to its very low formation energy, indicating high thermodynamic stability. An interesting transition from semiconducting to metallic state is observed for $N_{C}$ and $Al_{Si}$ defective systems. For the pristine SiC monolayer, we find that the conduction band is nearly flat in the $M\rightarrow K$ direction, leading to a high effective mass of $3.48m_{o}$. A significant red shift in the absorption edge, as well as the occurrence of additional absorption peaks due to the defects, have been observed in the lower energy range of the spectrum.

Investigation on Influence of Antisite Defects on Electronic Structure and Optical Properties of Silicon Carbide Nanotube

Electronic Transport Properties of Silicon Carbide Molecular Junctions: First-Principles Study

Influence of Stone-Wales defects on the structural and electronic properties of single-walled silicon nanotubes by SCC-DFTB calculations

Effects of Stone-Wales defects on structure and electrical properties of double-walled silicon nanotubes by SCC-DFTB method

Site-dependent properties of quantum emitters in nanostructured silicon carbide

The structural and electronic properties of Stone-Wales defective zigzag/armchair antimonene nanotubes: First-principles calculations

Excitonic effects in the optical properties of SiC sheet and nanotubes

First-principles Study of the Effects of Si Doping on Geometric and Electronic Structure of Closed Carbon Nanotube

Surface Defects-Induced P-Type Conduction of Silicon Nanowires

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

First-principle crystal orbital insights to the unusual increase of carrier mobility in zigzag carbon nanotubes induced by Stone–Wales defects

Optical Absorption Spectra and Polarizabilities of Silicon Carbide Nanotubes: A First Principles Study

Electronic and Optical properties of TM-doped (8,0) SiC SWNT and the prospect of hydrogen storage

Essential Electronic Properties of Silicon Nanotubes

Optical properties of SiC nanotubes: A systematic $\textit{ab initio}$ study

Defect-driven tunable electronic and optical properties of two-dimensional silicon carbide

STS Properties of Defective Metallic Carbon Nanotubes

Tuning the Electronic Structures of Semiconducting SiC Nanotubes by N and NHx (x=1,2) Groups.

Bonding Modes and Electronic Properties of Single-Crystalline Silicon Nanotubes

Quantum Confinement Of Crystalline Silicon Nanotubes With Nonuniform Wall Thickness: Implication To Modulation Doping

The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC