Electronic and Optical properties of TM-doped (8,0) SiC SWNT and the prospect of hydrogen storage

A.T. Mulatu,K.N. Nigussa,L.D. Deja
DOI: https://doi.org/10.48550/arXiv.2205.09387
2022-05-19
Abstract:Properties of transition metal (TM) doped single wall (8,0) SiC nanotube is investigated using first principles density functional theory as implemented within quantum espresso code. The properties studied are electronic, optical, and hydrogen storage prospect, while the transition metals used in the doping are Iron, Manganese, and Cobalt. The outcomes show that ferromagnetic ordering better describes the magnetic order within the doping process. The dopings result in half-metallic property. Hybridization between TM-3d and C-2p near Fermi-level region contributes to occurrence of the half-metallicity property. In addition, optoelectronics character and hydrogen storage capacity of the tube have appeared to be changed compared to that of the pristine. Dopings have appeared to result in an expanded range of optoelectronics applications ranging from photovoltaic effects of far infrared to visible lights. Furthermore, the tube appears to show a potential for hydrogen energy storage.
Materials Science
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