Abstract:We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed oxide charges in the thermally grown SiO2 layer and the Si/SiO2 interface, the effective Si cross-sectional wall widths were considerably narrower than the actual physical widths, due the formation of depletion regions from both sides. These nanostructures were configured into a metal-semiconductor-metal device configuration that was isolated from the substrate region. Dark currents, dc-photo-response, and carrier "time-of-flight" response measurements using a mode-locked femtosecond laser, were used in the study. In the narrowest wall devices, a considerable increase in conductivity was observed as a result of higher carrier mobilities due to lateral constriction and strain. The strain effects, which include the reversal splitting of light- and heavy- hole bands as well as the decrease of conduction-band effective mass by reduced Si bandgap energy, are formulated in our microscopic model for explaining the experimentally observed enhancements in both conduction- and valence-band mobilities with reduced Si wall thickness. The role of the biaxial strain buffing depth is elucidated and the quasi-quantum effect for the saturation hole mobility at small wall thickness is also found and explained. Specifically, the enhancements of the valence-band and conduction-band mobilities are found to be associated with different aspects of theoretical model.

Quantum Confinement Of Crystalline Silicon Nanotubes With Nonuniform Wall Thickness: Implication To Modulation Doping

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Confinement of electrons in size modulated silicon nanowires

Bonding Modes and Electronic Properties of Single-Crystalline Silicon Nanotubes

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Doping silicon nanocrystals with boron and phosphorus

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

A First-Principles Study of B/N Doping on the Transport Properties of Ultrafine Single-Walled Carbon Nanotubes

Significant Resistance Reduction in Modulation‐Doped Silicon Nanowires via Aluminum‐Induced Acceptor States in SiO2

Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design

Characterization of carrier transport properties in strained crystalline Si wall-like structures as a function of scaling into the quasi-quantum regime

Doping Mechanism in Single-Wall Carbon Nanotubes Studied by Optical Absorption

Quantum Confinement Effect on Li-Segregation in Si Nanowires

First-Principles Study of Hydrogen-Passivated Single-Crystalline Silicon Nanotubes: Electronic and Optical Properties

Electronic Properties Of Single-Walled Silicon Nanotubes Compared To Carbon Nanotubes

Electronic and Optical properties of TM-doped (8,0) SiC SWNT and the prospect of hydrogen storage

Nonnuclear Nearly Free Electron Conduction Channels Induced by Doping Charge in Nanotube-Molecular Sheet Composites.

Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes

Band gap unification of partially Si-substituted single wall carbon nanotubes

Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers Within Silicon Nanowire Transistor