Abstract:Nano-science and nano-technology are a significant scientific field of research. As one of the leading universities in China, Tsinghua University has carried out the education of nano-science and nano-engineering in both the undergraduate and the graduate levels. By the education of nano-science and nano-engineering, many important achievements of nano-science and nano-technology have been made in Tsinghua University. For example, our group has carried out researches on synthesis, structure and property of one-dimensional (ID) nano-materials. First, size effects on the crystal structure of Ag nanowires and on Young's modulus in [0001] oriented ZnO nanowires, respectively, have been revealed and modeled. The former is concerning the systemic energy of an individual Ag nanowire. The latter is caused by the surface stiffening effect arising from surface relaxation induced bond length contractions in the ZnO nanowires. Second, structures of ID helical nano-materials including SWCNT (single-walled carbon nanotube), B-DNA and MWCNT (mutli-walled carbon nanotube) have been studied. It is shown that there is strong orientation dependence of diffraction intensities from SWCNT and B-DNA, which can even result in certain layer lines missing in their diffraction patterns. Also, it is demonstrated that high-resolution transmission electron microscope (TEM) images of sidewall regions of MWCNTs are not structural ones and from the interference of the {0002} and the {101̄1} diffraction waves. Third, arrays of four types of 1D heterojunctions have been synthesized. Among these ID heterojunctions, the interfacial structures of the Ni/MWCNT/a- CNT(amorphous carbon nanotube) heterojunctions show that multiple outer walls in the MWCNTs can simultaneously participate in electrical transport. The electrical properties of the Ni/MWCNT/a-CNT and the Ag/a-CNT heterojunctions have been measured. As a result, it is found that the contacts between the Ag nanowires and the a-CNTs are ohmic ones with universal significance, and that each Ni/MWCNT/ a-CNT contains two diodes connected in series face-to-face. Moreover, most of the diodes have the most nearly ideal characteristics of Schottky contacts, indicated by quantitative analysis with the thermionic emission theory. Last, our group has developed a novel technique for rapidly producing large-area highly-oriented Si nanowire arrays on Si wafers by scratching the Si surface with metal nanoparticles near room temperature in HF solution. By this method, Si nanowires with desirable axial crystallographic directions, desirable doping characteristics and remarkable antireflection property can be readily obtained. The Si nanowire arrays have the potential applicability as an antireflective layer for photovoltaic devices and optical detectors. Furthermore, a combination of this method and the nanosphere lithography has been developed to fabricate large-scale Si and Si 1-xGex quantum dot arrays with controllable height, diameter and center-to-center distance. © 2006 Materials Research Society.

Quantum Confinement Effect on Li-Segregation in Si Nanowires

Controlled Li Doping of Si Nanowires by Electrochemical Insertion Method

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Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Li Segregation Induces Structure and Strength Changes at the Amorphous Si/Cu Interface

Confinement of electrons in size modulated silicon nanowires

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Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Quantum Confinement Of Crystalline Silicon Nanotubes With Nonuniform Wall Thickness: Implication To Modulation Doping

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Effect of Atomic Defects and Interwire Coupling on the Electronic Properties of One-Dimensional Gd Silicide Nanowires

Ab-initio Study of Size and Strain Effects on the Electronic Properties of Si Nanowires

Quantum Coherent States and Path Integral Method to Stochastically Determine the Anisotropic Volume Expansion in Lithiated Silicon Nanowires

Impacts of size and cross-sectional shape on surface lattice constant and electron effective mass of silicon nanowires

Effects Of Lithium Insertion On Thermal Conductivity Of Silicon Nanowires

Multi-Scale Simulation Of Lithium Diffusion In The Presence Of A 30 Degrees Partial Dislocation And Stacking Fault In Si

Direct atomic-scale imaging about the mechanisms of ultralarge bent straining in Si nanowires.

Lithiation-delithiation cycles of amorphous Si nanowires investigated by molecular dynamics simulations

Multi-Scale Simulation Of The Stability And Diffusion Of Lithium In The Presence Of A 90 Degrees Partial Dislocation In Silicon

Size dependence in one-dimensional nano-materials and one-dimensional heterojunctions

Effect of interstitial lithium atom on crystal and electronic structure of silicon oxynitride