Abstract:Titanium dioxide (TiO2) nanowires (NWs) are usually considered to be brittle semiconductor materials, which limits their use in strain-related applications, even though they are already widely applied in various fields. Based on observations using an in situ transmission electron microscopy method, we find, for the first time, that individual crystalline TiO2 NWs with a bronze phase (TiO2-B) can exhibit an ultralarge elastic bending strain of up to 18.7%. Using an in situ atomic-scale study, the underlying mechanisms of the ultralarge bending deformation of TiO2-B NWs under the < 111 >{100} system are revealed to be governed by lattice shear and rich dislocation movements; the lattice shearing is supported by numerical simulations. Locally, large-scale sheared lattices with a shear strain of up to 10.7% can be observed in a bent NW. It is believed that the large-scale lattice shearing deformation offers the NW the ability to absorb a large bending energy so that fast dislocation aggregation and propagation are avoided. Therefore, the TiO2-B NWs can endure an ultralarge bending strain without crack formation or amorphization. However, it is found that the lattice shear-governed bending mechanism is not applied in the < 010 >{100} system. These results are able to provide more opportunities for the strain engineering of TiO2 NWs and also help promote the potential applications of TiO2 NW-based flexible devices.

Direct atomic-scale imaging about the mechanisms of ultralarge bent straining in Si nanowires.

Atomistic Mechanisms of Ultralarge Bending Deformation of Single-Crystalline TiO2–B Nanowires

In Situ Atomic-Scale Study on the Ultralarge Bending Behaviors of TiO2-B/Anatase Dual-Phase Nanowires.

Exceptional Deformability of Wurtzite Zinc Oxide Nanowires with Growth Axial Stacking Faults

Revealing the Mechanical Bending Mechanisms of Single-Crystalline Rutile TiO2 Nanowires Near Room Temperature: Implications for Nanostructured Semiconductors

Reveal the Plastic Deformation Mechanisms of Si Nanowires at the Atomic Scale

In Situ Observation of High Bending Strain Recoverability in Au Nanowires

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Atomic mechanisms governing the elastic limit and the incipient plasticity of bending Si nanowires.

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Mechanical properties of Si nanowires as revealed by in situ transmission electron microscopy and molecular dynamics simulations.

Deformation Mechanisms of Bent Si Nanowires Governed by the Sign and Magnitude of Strain

Low‐Temperature in Situ Large‐Strain Plasticity of Silicon Nanowires

Low-temperature in situ large-strain plasticity of silicon nanowires

Low-Temperature In Situ Large Strain Plasticity Of Ceramic Sic Nanowires And Its Atomic-Scale Mechanism

Fracture of a silicon nanowire at ultra-large elastic strain

Atomic-Scale-Deformation-Dynamics (asds) of Nanowires and Nanofilms

In situ atomic-scale observation of continuous and reversible lattice deformation beyond the elastic limit

Asymmetrical quantum dot growth on tensile and compressive-strained ZnO nanowire surfaces

On the large-strain plasticity of silicon nanowires: Effects of axial orientation and surface