Abstract:Titanium dioxide (TiO2) nanowires (NWs) are usually considered to be brittle semiconductor materials, which limits their use in strain-related applications, even though they are already widely applied in various fields. Based on observations using an in situ transmission electron microscopy method, we find, for the first time, that individual crystalline TiO2 NWs with a bronze phase (TiO2-B) can exhibit an ultralarge elastic bending strain of up to 18.7%. Using an in situ atomic-scale study, the underlying mechanisms of the ultralarge bending deformation of TiO2-B NWs under the < 111 >{100} system are revealed to be governed by lattice shear and rich dislocation movements; the lattice shearing is supported by numerical simulations. Locally, large-scale sheared lattices with a shear strain of up to 10.7% can be observed in a bent NW. It is believed that the large-scale lattice shearing deformation offers the NW the ability to absorb a large bending energy so that fast dislocation aggregation and propagation are avoided. Therefore, the TiO2-B NWs can endure an ultralarge bending strain without crack formation or amorphization. However, it is found that the lattice shear-governed bending mechanism is not applied in the < 010 >{100} system. These results are able to provide more opportunities for the strain engineering of TiO2 NWs and also help promote the potential applications of TiO2 NW-based flexible devices.

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In Situ Atomic-Scale Study on the Ultralarge Bending Behaviors of TiO2-B/Anatase Dual-Phase Nanowires.

Exceptional Deformability of Wurtzite Zinc Oxide Nanowires with Growth Axial Stacking Faults

In Situ Observation of High Bending Strain Recoverability in Au Nanowires

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Direct atomic-scale imaging about the mechanisms of ultralarge bent straining in Si nanowires.

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Electron-Beam-Induced Elastic-Plastic Transition in Si Nanowires

Mechanical properties of Si nanowires as revealed by in situ transmission electron microscopy and molecular dynamics simulations.

Atomic mechanisms governing the elastic limit and the incipient plasticity of bending Si nanowires.

Direct Observation of Super‐Plasticity of Beta‐SiC Nanowires at Low Temperature

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Fracture of a silicon nanowire at ultra-large elastic strain

Strong Hall-Petch Type Behavior in the Elastic Strain Limit of Nanotwinned Gold Nanowires

In situ atomic-scale observation of continuous and reversible lattice deformation beyond the elastic limit

Origin of Plasticity in Nanostructured Silicon

Approaching the ideal elastic strain limit in silicon nanowires

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires