Approaching the ideal elastic strain limit in silicon nanowires

Hongti Zhang,Jerry Tersoff,Shang Xu,Huixin Chen,Qiaobao Zhang,Kaili Zhang,Yong Yang,Chun-Sing Lee,King-Ning Tu,Ju Li,Yang Lu

DOI: https://doi.org/10.1126/sciadv.1501382

IF: 13.6

2016-08-05

Science Advances

Abstract:Single-crystalline silicon nanowires can be reversibly stretched above 10% elastic strain at room temperature.

multidisciplinary sciences

What problem does this paper attempt to address?

Revealing the Mechanical Bending Mechanisms of Single-Crystalline Rutile TiO2 Nanowires Near Room Temperature: Implications for Nanostructured Semiconductors

Qiong Liu,Arixin Bo,Haifei Zhan,Liangzhi Kou,Yuantong Gu

DOI: https://doi.org/10.1021/acsanm.1c01864

IF: 6.14

2021-01-01

ACS Applied Nano Materials

Abstract:Understanding the deformation mechanisms of rutile titanium dioxide (TiO2) nanowires (NWs) helps to improve the working reliability of TiO2-based nanoelectrical-mechanical systems and better apply strain engineering to these materials. This work investigated the bending deformation mechanisms at the atomic scale using in situ transmission electron microscopy (TEM) near room temperature. Large bending strains of 3.0% to 5.1% could be observed on individual TiO2 NWs near room temperature. The large bending deformation was attributed to the formation of rich stacking faults (SFs) lying on (10 (1) over bar) planes and the nucleation and glide of extended dislocations belonging to the {10 (1) over bar}< 101 > slip system.
Approaching the theoretical elastic strain limit in copper nanowires.

Xiaodong Han,E. Ma,Pan Liu,Ze Zhang,Yonghai Yue

DOI: https://doi.org/10.1021/nl201233u

2011-07-22

Abstract:Three sets of uniaxial tensile tests have been performed in situ in transmission electron microscopy/high-resolution electron microscopy on Cu nanowires (NWs) to accurately map out the sample size dependence of elastic strain limit. Atomic-resolution evidence was obtained for an exceedingly large recoverable strain (as much as 7.2%) that can be sustained in the lattice of a single-crystalline Cu NW with a diameter of ∼5.8 nm. This ultrahigh elastic strain is consistent with the predictions from molecular dynamics simulations for nanowires and approaches the ideal elastic limit predicted for Cu by ab initio calculations.

Medicine,Physics,Materials Science
A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Song Li,Jyh-Pin Chou,Hongti Zhang,Yang Lu,Alice Hu

DOI: https://doi.org/10.1063/1.5052718

IF: 2.877

2019-02-28

Journal of Applied Physics

Abstract:Recently, ultralarge (>10%) strain with fully reversible elastic deformation has been experimentally achieved in silicon nanowires [H. Zhang et al., Sci. Adv. 2, e1501382 (2016)]. With this breakthrough, here in this work, based on the first principles calculation, the structural and electric properties of silicon under ultralarge strain are comparatively investigated. Unlike previous theoretical/simulation investigations on silicon nanowires with only a few nanometers, bulk silicon models are employed here to provide more realistic and comparable results to our experimentally tested samples (∼100 nm diameter). Strong anisotropic effects are induced by loading strain along all different orientations. Simultaneously, the band structures evolution demonstrates electronic anisotropy with the loading strain on three orientations. Silicon keeps an indirect bandgap under increased strain along the ⟨100⟩ orientation while transforming to a direct bandgap with strain along ⟨110⟩ and ⟨111⟩ orientations. Furthermore, ultralarge strain on these two orientations would diminish the bandgap and result into metallization. These results provide insights into understanding “elastic strain engineering” of silicon nanowire applications and demonstrate the possibility of tuning the electronic and optical properties through pure mechanical straining of functional materials.

physics, applied
In Situ Observation of High Bending Strain Recoverability in Au Nanowires

Lingyi Kong,Guang Cao,Haofei Zhou,Jiangwei Wang

DOI: https://doi.org/10.3390/cryst13081159

IF: 2.7

2023-01-01

Crystals

Abstract:Metallic nanowires (NW) usually exhibit unique physical, mechanical, and chemical properties compared to their bulk counterparts. Despite extensive research on their mechanical behavior, the atomic-scale deformation mechanisms of metallic nanowires remain incompletely understood. In this study, we investigate the deformation behavior of Au nanowires embedded with a longitudinal twin boundary (TB) under different loading rates using in situ nanomechanical testing integrated with atomistic simulations. The Au nanowires exhibit a recoverable bending strain of up to 27.5% with the presence of TBs. At low loading rates, the recoverable bending is attributed to the motion of stacking faults (SFs) and their interactions with TBs. At higher loading rates, the formation of high-angle grain boundaries and their reversible migration become dominant in Au nanowires. These findings enhance our understanding of the bending behavior of metallic nanowires, which could inspire the design of nanodevices with improved fatigue resistance and a large recoverable strain capacity.
Tensile Properties of Si Nanowires with Faulted Stacking Layers

Haifei Zhan,Yuantong Gu,Cheng Yan,Prasad K. D. V. Yarlagadda

DOI: https://doi.org/10.1166/sam.2014.1800

2014-01-01

Science of Advanced Materials

Abstract:Semiconductor nanowires (NWs) show tremendous applications in micro/nano-electro-mechanical systems. In order to fulfill their promising applications, an understanding of the mechanical properties of NWs becomes increasingly important. Based on the large-scale molecular dynamics simulations, this work investigated the tensile properties of Si NWs with different faulted stacking layers. Different faulted stacking layers were introduced around the centre of the NW by the insertion or removal of certain stacking layers, inducing twins, intrinsic stacking fault, extrinsic stacking fault, and 9R crystal structure. Stress–strain curves obtained from the tensile deformation tests reveal that the presence of faulted stacking layers has induced a considerable decrease to the yield strength while only a minor decrease to Young's modulus. The brittle fracture phenomenon is observed for all tested NWs. In particular, the formation of a monatomic chain is observed for the perfect NW, which exists for a relatively wide strain range. For the defected NW, the monatomic chain appears and lasts shorter. Additionally, all defected NWs show a fracture area near the two ends, in contrast to the perfect NW whose fracture area is adjacent to the middle. This study provides a better understanding of the mechanical properties of Si NWs with the presence of different faulted stacking layers.
Strong Hall-Petch Type Behavior in the Elastic Strain Limit of Nanotwinned Gold Nanowires

Jiangwei Wang,Frederic Sansoz,Chuang Deng,Gang Xu,Gaorong Han,Scott X. Mao

DOI: https://doi.org/10.1021/acs.nanolett.5b00694

IF: 10.8

2015-01-01

Nano Letters

Abstract:Pushing the limits of elastic deformation in nanowires subjected to stress is important for the design and performance of nanoscale devices from elastic strain engineering. Particularly, introducing nanoscale twins has proved effective in rising the tensile strength of metals. However, attaining ideal elastic strains in nanotwinned materials remains challenging, because nonuniform twin sizes locally affect the yielding behavior. Here, using in situ high-resolution transmission electron microscopy tensile testing of nanotwinned [111]-oriented gold nanowires, we report direct lattice-strain measurements that demonstrate a strong Hall-Petch type relationship in the elastic strain limit up to 5.3%, or near the ideal theoretical limit, as the twin size is decreased below 3 nm. It is found that the largest twin in nanowires with irregular twin sizes controls the slip nucleation and yielding processes in pure tension, which is in agreement with earlier atomistic simulations. Continuous hardening behavior without loss of strength or softening is observed in nanotwinned single-crystalline gold nanowires, which differs from the behaviors of bulk nanocrystalline and nanotwinned-nanocrystalline metals. These findings are of practical value for the use of nanotwinned metallic and semiconductor nanowires in strain-engineered functional microdevices.
Exceptional Deformability of Wurtzite Zinc Oxide Nanowires with Growth Axial Stacking Faults

Qiong Liu,Yihan Nie,Jing Shang,Liangzhi Kou,Haifei Zhan,Ziqi Sun,Arixin Bo,Yuantong Gu

DOI: https://doi.org/10.1021/acs.nanolett.1c03454

IF: 10.8

2021-01-01

Nano Letters

Abstract:To ensure reliability and facilitate the strain engineering of zinc oxide (ZnO) nanowires (NWs), it is significant to understand their flexibility thoroughly. In this study, single-crystalline ZnO NWs with rich axial pyramidal I (π1) and prismatic stacking faults (SFs) are synthesized by a metal oxidation method. Bending properties of the as-synthesized ZnO NWs are investigated at the atomic scale using an in situ high-resolution transmission electron microscopy (HRTEM) technique. It is revealed that the SF-rich structures can foster multiple inelastic deformation mechanisms near room temperature, including active axial SFs' migration, deformation twinning and detwinning process in the NWs with growth π1 SFs, and prevalent nucleation and slip of perfect dislocations with a continuous increased bending strain, leading to tremendous bending strains up to 20% of the NWs. Our results record ultralarge bending deformations and provide insights into the deformation mechanisms of single-crystalline ZnO NWs with rich axial SFs.
Fracture of a silicon nanowire at ultra-large elastic strain

Hongti Zhang,Ka-Yu Fung,Yu Zhuang,Ke Cao,Jian Song,Alice Hu,Yang Lu

DOI: https://doi.org/10.1007/s00707-017-2015-0

IF: 2.645

2017-12-23

Acta Mechanica

Abstract:Understanding the fracture behavior of one-dimensional (1-D) nanomaterials is critical for their functional device applications and maximizing their service life. At the nanoscale, solid materials’ fracture properties could significantly deviate from their bulk counterparts. Our recent study (Zhang et al. in Sci. Adv. 2(8):e1501382, 2016. 10.1126/sciadv.1501382) showed that silicon (Si) nanowires, one of the most important functional 1-D nanomaterials for nanoelectronics and nano-electro-mechanical systems, demonstrated distinctly different mechanical properties than microscale and bulk Si crystals with the elastic strain up to 10% or even more, approaching their theoretical elastic limit. It is therefore intriguing to understand the fracture behavior of a Si nanowire under such deep ultra-strength, as well as their failure mechanisms. In this work, we will experimentally study the fracture behavior of ultrahigh elastic Si nanowires in situ and quantitatively understand their fracture mechanics with the assist of molecular dynamics simulations. The insights obtained in this nanomechanical study may be of help on the development of robust Si nanowire-based mechatronic devices.

mechanics
Low‐Temperature in Situ Large‐Strain Plasticity of Silicon Nanowires

Xiaodong Han,Kun Zheng,YueFei Zhang,Xiaona Zhang,Ze Zhang,Zhong Lin Wang

DOI: https://doi.org/10.1002/adma.200602705

IF: 29.4

2007-01-01

Advanced Materials

Abstract:The large-strain plasticity (LSP) of single-crystalline silicon nanowires (Si NWs) observed in situ at room temperature by axial tension experiments carried out in an ultrahigh-resolution electron microscope is reported. The LSP is demonstrated to result in a fourfold reduction in NW diameter before fracture (see figure), which is three orders of magnitude higher than that of bulk Si.
Strain/Stress-Engineering in Phonon Properties of Streesed Semiconductor Nanowires

Linli Zhu,Jie Wang

DOI: https://doi.org/10.1063/1.4825648

2013-01-01

Abstract:The phonon properties and thermal performance of stressed silicon nanowires have been studied theoretically. The spatial confinement effect has been accounted for based on the elastic theory. The modified vibration equation and elastic modulus of nanowire are addressed due to the existence of the pre-stress field. Numerical results show that the phonon dispersion of nanowire can be changed by the applied transversal biaxial stresses, leading to that the phonon thermal conductivity of silicon nanowire can be tuned through controlling the strength and direction of applied stresses.
Elastic Stretch Limit Exceeding 10% for Silicon Wires with Sub‐Micron to Micron Diameters

Xian Xia,Bingchang Zhang,Yihao Shi,Jiahao Qin,Jia Yu,Xiaohong Zhang

DOI: https://doi.org/10.1002/adem.202302187

IF: 3.6

2024-06-15

Advanced Engineering Materials

Abstract:It is significant to modulate the bandgap of crystalline silicon (c‐Si) by applying large strains on it through controlled stretch. However, investigations on the stretchability of c‐Si are still insufficient, especially for samples with feature sizes in the sub‐micron to micron scale. In this work, the large stretchability of silicon wires with sub‐micron to micron diameters (SiMWs) is reported for the first time by using vapor‐liquid‐solid grown ultralong SiMWs. The diameters of the SiMW specimens range from 400 nm to 1.8 μm. The loading speed for stretching SiMWs is 100 nm/s. It is found that the SiMWs with micron diameter have a stretch limit over 10%, while the stretch limit for samples with sub‐micron diameter can reach 12%. The results fill the gaps in the knowledge of micron‐scale silicon materials' stretchability. The average Young's modulus of SiMWs is measured as 115 GPa. Cyclic loading tests indicate that the tensile deformation of SiMWs is elastic and reversible with no plastic deformation observed. This work shows that large stretch of SiMWs can be achieved without the need of harsh experimental conditions, which will greatly facilitate the study of large strain engineering on c‐Si to modulate their properties and broaden their applications. This article is protected by copyright. All rights reserved.

materials science, multidisciplinary
Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

XD Han,YF Zhang,XQ Liu,Z Zhang,YJ Hao,XY Guo

DOI: https://doi.org/10.1063/1.2141654

IF: 2.877

2005-01-01

Journal of Applied Physics

Abstract:The plastic deformation features of intrinsic brittle-featured SiC nanowires by high resolution electron microscopy have been investigated. Strong plastic deformation strain fields were observed in a bent SiC nanowire. The achieved localized strain reaches about 1.5%. Localized lattice bending, atomic lattice disordering, and amorphization are contribution factors to achieve the plastic deformation. The projected Si–Si bonding angle distribution on the (110) atomic plane demonstrates the disordering features of the bent SiC nanowire. Buckling is found at the compressive side of the bent SiC nanowire. Growth bending can be achieved through {111} twinning and phase transformation from 3C to 2H.
Elastically Strained Nanowires and Atomic Sheets

Yu Dapeng,Feng Ji,Hone James

DOI: https://doi.org/10.1557/mrs.2014.6

IF: 5

2014-01-01

MRS Bulletin

Abstract:Deformation is one of the most fundamental aspects of materials. While mechanical failure is an outcome of deformation to be avoided, elastic deformation can have a pronounced and positive impact on materials properties. The effect of elastic deformation becomes even more evident at low dimensions, because at the micro/nanoscale, materials and structures can usually sustain exceptionally high elastic strains before failure. The purpose of this overview is to present a summary of recent progress on elastically strained nanowires and atomic sheets. First, we will demonstrate that nanowires can sustain large elastic strains, and their bending modulus increases exponentially as the nanowire diameter decreases. Second, the elastic strain has been found to significantly modify the electronic structure of semiconductor nano/microwires to induce a metal–insulator transition at room temperature and to efficiently transform the mechanical energy into electricity. These recent developments point to potential future applications based on the elastic strain engineering of nanoscale materials.
Optimized Structural Designs for Stretchable Silicon Integrated Circuits

Dae-Hyeong Kim,Zhuangjian Liu,Yun-Soung Kim,Jian Wu,Jizhou Song,Hoon-Sik Kim,Yonggang Huang,Keh-chih Hwang,Yongwei Zhang,John A. Rogers

DOI: https://doi.org/10.1002/smll.200900853

IF: 13.3

2009-01-01

Small

Abstract:Materials and design strategies for stretchable silicon integrated circuits that use non-coplanar mesh layouts and elastomeric substrates are presented. Detailed experimental and theoretical studies reveal many of the key underlying aspects of these systems. The results shpw, as an example, optimized mechanics and materials for circuits that exhibit maximum principal strains less than 0.2% even for applied strains of up to approximately 90%. Simple circuits, including complementary metal-oxide-semiconductor inverters and n-type metal-oxide-semiconductor differential amplifiers, validate these designs. The results suggest practical routes to high-performance electronics with linear elastic responses to large strain deformations, suitable for diverse applications that are not readily addressed with conventional wafer-based technologies.
Atomic mechanisms governing the elastic limit and the incipient plasticity of bending Si nanowires.

Kun Zheng,Xiaodong Han,Lihua Wang,Yuefei Zhang,Yonghai Yue,Yan Qin,Xiaona Zhang,Ze Zhang

DOI: https://doi.org/10.1021/nl9012425

IF: 10.8

2009-01-01

Nano Letters

Abstract:Individual single-crystal line Si nanowires (NWs) were bent by forming loops or arcs with different radius. Positional-resolved atomic level strain distribution (PRALSD) along both of the radial and axial directions were calculated and mapped directly from the atomic-resolution strained high-resolution electron microscopy (HREM) images of the bent Si NWs. For the first time, the neutral-strain axis shifted from the compressive zone to the tensile region was directly demonstrated from the PRALSD along the radial direction. Bending-induced ripple-buckling of the bent Si NW was observed and a significant strain variation along the bending axial direction in the compressive region was revealed. The tensile surface atomic steps and the compressive buckling are the physical origin of the asymmetric tensile-compressive properties of postelastic instabilities and the incipient plasticity. Both of the tensile surface atomic-steps and the compressive buckling initiated versatile ductile plastic dislocation events.
In‐Plane Self‐Turning and Twin Dynamics Renders Large Stretchability to Mono‐Like Zigzag Silicon Nanowire Springs

Zhaoguo Xue,Mingkun Xu,Xing Li,Jimmy Wang,Xiaofan Jiang,Xianlong Wei,Linwei Yu,Qing Chen,Junzhuan Wang,Jun Xu,Yi Shi,Kunji Chen,Pere Roca i Cabarrocas

DOI: https://doi.org/10.1002/adfm.201600780

IF: 19

2016-01-01

Advanced Functional Materials

Abstract:Crystalline Si nanowire (SiNW) springs, produced via a low temperature (<350 °C) thin film technology, are ideal building blocks for stretchable electronics. Herein, a novel cyclic crystallographic‐index‐lowering self‐turning and twin dynamics is reported, during a tin‐catalyzed in‐plane growth of SiNWs, which results in a periodic zigzag SiNW without any external parametric intervention. More interestingly, a unique twin‐reflected interlaced crystal‐domain structure has been identified for the first time, while in situ and real‐time scanning electron microscopy observations reveal a new twin‐triggering growth mechanism that is the key to reset a complete zigzag growth cycle. Direct “stress–strain” testing of the SiNW springs demonstrates a large stretchability of 12% under tensile loading, indicating a whole new strategy and capability to engineer mono‐like SiNW channels for high performance stretchable electronics.
Strain Engineering of the thermal conductance in Si nanowires

K. Miao,Gerhard Klimeck,A. Paul,M. Luisier

2011-03-24

Abstract:Submitted for the MAR11 Meeting of The American Physical Society Strain Engineering of the thermal conductance in Si nanowires A. PAUL, K. MIAO, M. LUISIER, G. KLIMECK, Purdue University — Silicon nanowires (SiNWs) are promising semiconductor structures spanning a wide range of applications from CMOS devices to thermoelectric modules. Recently, SiNWs have shown tremendous potential as good thermoelectric materials with ZT coefficients larger than 1 [1]. This figure of merit can be further improved by tuning the thermal conductivity of the SiNWs. Here, we show that strain provides a natural way of tuning the thermal conductance of ultra-scaled SiNWs. We utilize a modified Valence Force Field (MVFF) model [2] to calculate the phonon dispersion in these SiNWs under strain and extract their thermal conductance using Landauer’s approach. Our investigation shows that uniaxial tensile and hydrostatic compressive help reduce the thermal conductance of SiNWs. For example, a 3nm X 3nm, <100> oriented nanowire undergoing a 2% uniaxial tensile strain exhibits a thermal conductance reduced up to 2.6%, whereas a compressive hydrostatic strain of 2% gives a reduction of around 8%. Thus, strain engineering can prove beneficial in tuning the thermal conductance in Si nanowires and offers an efficient way to further improve the ZT figure of merit. Finanacial support from MSD, SRC, MIND and NSF, computational support from nanoHUB.org under NCN. Refs: [1] A. I. Hochbaum et al., ’Enhanced thermoelectric performance of rough silicon nanowires’, Nature 451, no. 7175, pp. 163, 2008. [2] A Paul, M Luisier and G Klimeck, ’Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires.’, arXiv:1009.6188v2[cond-mat.mes-hall]. Abhijeet Paul Purdue University Date submitted: 27 Nov 2010 Electronic form version 1.4

Materials Science,Engineering,Physics
Forward bending of silicon nanowires induced by strain distribution in asymmetric growth

Yongkang Xu,Lianbi Li,Yuan Zang,Jichao Hu,Zebin Li,Hong Chen,Guoqing Zhang,Caijuan Xia,Jeong-Hyun Cho

DOI: https://doi.org/10.1016/j.matlet.2021.129929

IF: 3

2021-08-01

Materials Letters

Abstract:<p>The flexibility and quasi-one-dimensional nature of nanowires offer wide-ranging possibilities for novel heterostructure design and strain engineering. In this work, we realized controllably bent Si nanowires by using asymmetric growth with electron beam evaporation system. It is demonstrated that the degree of arc-bending depends on the deposition angle and deposition thickness. The forward bending of the Si nanowires is due to the lattice mismatch and thermal mismatch between Si and the metallic materials such as Cr and Ti, which can be generally utilized to control the shape and internal strain of Si nanowires, with potential applications for fabricating desired nano-devices.</p>

materials science, multidisciplinary,physics, applied
In situ atomic-scale observation of continuous and reversible lattice deformation beyond the elastic limit

Lihua Wang,Pan Liu,Pengfei Guan,Mingjie Yang,Jialin Sun,Yongqiang Cheng,Akihiko Hirata,Ze Zhang,Evan Ma,Mingwei Chen,Xiaodong Han

DOI: https://doi.org/10.1038/ncomms3413

IF: 16.6

2013-01-01

Nature Communications

Abstract:The elastic strain sustainable in crystal lattices is usually limited by the onset of inelastic yielding mediated by discrete dislocation activity, displacive deformation twinning and stress-induced phase transformations, or fracture associated with flaws. Here we report a continuous and gradual lattice deformation in bending nickel nanowires to a reversible shear strain as high as 34.6%, which is approximately four times that of the theoretical elastic strain limit for unconstrained loading. The functioning deformation mechanism was revealed on the atomic scale by an in situ nanowire bending experiments inside a transmission electron microscope. The complete continuous lattice straining process of crystals has been witnessed in its entirety for the straining path, which starts from the face-centred cubic lattice, transitions through the orthogonal path to reach a body-centred tetragonal structure and finally to a re-oriented face-centred cubic structure.
Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices

Maximilian G. Bartmann,Sebastian Glassner,Masiar Sistani,Riccardo Rurali,Maurizia Palummo,Xavier Cartoixà,Jürgen Smoliner,Alois Lugstein

DOI: https://doi.org/10.1021/acsami.4c05477

IF: 9.5

2024-06-21

ACS Applied Materials & Interfaces

Abstract:In this work, we explore the effect of ultrahigh tensile strain on electrical transport properties of silicon. By integrating vapor-liquid-solid-grown nanowires into a micromechanical straining device, we demonstrate uniaxial tensile strain levels up to 9.5%. Thereby the triply degenerated phonon dispersion relation at the Γ-point of silicon disentangle and the longitudinal phonon modes are used to precisely determine the extent of mechanical strain. Simultaneous electrical transport...

materials science, multidisciplinary,nanoscience & nanotechnology

Approaching the ideal elastic strain limit in silicon nanowires

Revealing the Mechanical Bending Mechanisms of Single-Crystalline Rutile TiO2 Nanowires Near Room Temperature: Implications for Nanostructured Semiconductors

Approaching the theoretical elastic strain limit in copper nanowires.

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

In Situ Observation of High Bending Strain Recoverability in Au Nanowires

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Strong Hall-Petch Type Behavior in the Elastic Strain Limit of Nanotwinned Gold Nanowires

Exceptional Deformability of Wurtzite Zinc Oxide Nanowires with Growth Axial Stacking Faults

Fracture of a silicon nanowire at ultra-large elastic strain

Low‐Temperature in Situ Large‐Strain Plasticity of Silicon Nanowires

Strain/Stress-Engineering in Phonon Properties of Streesed Semiconductor Nanowires

Elastic Stretch Limit Exceeding 10% for Silicon Wires with Sub‐Micron to Micron Diameters

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Elastically Strained Nanowires and Atomic Sheets

Optimized Structural Designs for Stretchable Silicon Integrated Circuits

Atomic mechanisms governing the elastic limit and the incipient plasticity of bending Si nanowires.

In‐Plane Self‐Turning and Twin Dynamics Renders Large Stretchability to Mono‐Like Zigzag Silicon Nanowire Springs

Strain Engineering of the thermal conductance in Si nanowires

Forward bending of silicon nanowires induced by strain distribution in asymmetric growth

In situ atomic-scale observation of continuous and reversible lattice deformation beyond the elastic limit

Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices