Abstract:Electronic systems that offer elastic mechanical responses to high strain deformations are of growing interest, due to their ability to enable new electrical, optical and biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This paper describes materials and mechanical design strategies for classes of electronic circuits that offer extremely high flexibility and stretchability over large area, enabling them to accommodate even demanding deformation modes, such as twisting and linear stretching to ‘rubber-band’ levels of strain over 100%. The use of printed single crystalline silicon nanomaterials for the semiconductor provides performance in flexible and stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators and differential amplifiers, suggest a valuable route to high performance stretchable electronics that can be integrated with nearly arbitrary substrates. We show examples ranging from plastic and rubber, to vinyl, leather and paper, with capability for large area coverage.

Elastic Stretch Limit Exceeding 10% for Silicon Wires with Sub‐Micron to Micron Diameters

Engineering in-plane silicon nanowire springs for highly stretchable electronics

Tensile Properties of Si Nanowires with Faulted Stacking Layers

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Achieving ultra-large tensile strain in nanoscale Si mechanical metamaterials

In‐Plane Self‐Turning and Twin Dynamics Renders Large Stretchability to Mono‐Like Zigzag Silicon Nanowire Springs

Reduction in Modulus of Suspended Sub-2 nm Single Crystalline Silicon Nanomembranes

Approaching the ideal elastic strain limit in silicon nanowires

Stretchable silicon electronics and their integration with rubber, plastic, paper, vinyl, leather and fabric substrates

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Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates

Mechanical properties of Si nanowires as revealed by in situ transmission electron microscopy and molecular dynamics simulations.

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Biaxially Stretchable Ultrathin Si Enabled by Serpentine Structures on Prestrained Elastomers

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Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Optimized Structural Designs for Stretchable Silicon Integrated Circuits

Low‐Temperature in Situ Large‐Strain Plasticity of Silicon Nanowires

Deterministic Line-Shape Programming of Silicon Nanowires for Extremely Stretchable Springs and Electronics

Stretchable Electronics: Biaxially Stretchable Ultrathin Si Enabled by Serpentine Structures on Prestrained Elastomers (Adv. Mater. Technol. 1/2019)

Stretchable silicon array with stretchability at 66.1% ± 2.9% and silicon areal coverage of 71.5% enabled by wafer-level microfabrication strategy