Abstract:Catalytic growth of silicon nanowires (SiNWs), mediated by metallic droplet, provide ideal quasi-1D channels to construct high performance field effect transistor (FET). However, the incorporation of catalytic metal atoms into SiNWs channels has significant impact on the FET characteristics, and thus needs to be better understood and controlled to fulfil its potential for high performance electronics. In this work, we focus on the effect of the incorporation of indium (In) catalytic atoms into planar SiNWs, grown via an in-plane solid-liquid-solid (IPSLS) mechanism, on the FET device performance. It is found that the initial high concentration of p-type In dopants in the as-grown SiNWs led to an equivalent boron (B) doping of 5x10(18) cm(-3). However, a simple step-wise annealing in oxygen at different temperatures, varied from 620 degrees C to 920 degrees C, can help to out-diffuse the dissolved In atoms into the surface SiO2 layer, and reduce the In concentrations down to <5x10(17) cm(-3), as verified by atom-probe tomography (APT) and four-point-probe measurements. This effective dopant control enables a remarkable device performance improvement of the Schottky barrier FETs, built upon an orderly array of parallel SiNWs of approximately 25 nm in diameter, where the current ratio (I-on/I-off) has been substantially boosted from 10(5) to 10(8), while the subthreshold swing (SS) reduced from 400 mV/dec down to similar to 100 mV/dec, with a hole carrier mobility increased from 10 to similar to 75 cm(2) V-1 s(-1) as extracted according to a finite element analysis. These results pave the way for the employment of the catalytic IPSLS SiNWs to serve as high quality 1D channels for high-performance SiNWs-based electronics and sensors.

Significant Resistance Reduction in Modulation‐Doped Silicon Nanowires via Aluminum‐Induced Acceptor States in SiO2

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO2 Coating

Modulation doping of GaAs/AlGaAs core-shell nanowires with effective defect passivation and high electron mobility

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Controlled nanoscale doping of semiconductors via molecular monolayers

CMOS-compatible controlled hyperdoping of silicon nanowires

Efficient Electron And Hole Doping In Compositionally Abrupt Si/Ge Nanowires

Inversion-mode Operation of Thermally-oxidized Modulation-doped Silicon Nanowire Field Effect Devices

Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Quantum Confinement Of Crystalline Silicon Nanotubes With Nonuniform Wall Thickness: Implication To Modulation Doping

Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

First Principles Study of P-Type Doping in SiC Nanowires: Role of Quantum Effect

Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire

Performance Improvement of Planar Silicon Nanowire Field Effect Transistors Via Catalyst Atom Doping Control

Significant Conductivity Enhancement in Al-rich N-Algan by Modulation Doping

Atomically Smooth P-Doped Silicon Nanowires Catalyzed by Aluminum at Low Temperature

Controlled doping of silicon nanocrystals investigated by solution-processed field effect transistors.

In situ axially doped n-channel silicon nanowire field-effect transistors.

Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient

Unexpected Phosphorus Doping Routine of Planar Silicon Nanowires for Integrating CMOS Logics.