Abstract:The structural optimization and energetics studies of SiC graphitic-like structures have been investigated theoretically in the context of formations of stable graphitic-like layer structures, single- and multi-walled nanotubes using the DFT-based Vienna ab-inito simulation package. The bonding nature of atoms in the optimized structures has been examined using a local analysis technique based on a self-consistent and environment-dependent semi-empirical Hamiltonian. Results of our studies reveal that stabilized SiC graphitic-like layer structures possess the sp2 bonding nature, different from the sp3 bonding nature in bulk SiC. Such flexibility in bonding configurations between Si and C atoms holds the possibility for a wide range of stable SiC-based structures, similar to those for carbon-based structures. In the case of SiC-based nanotubes, we have calculated quantities such as the strain energy, the degree of buckle in the cylindrical shell, and bond charges between Si and C atoms, to obtain an understanding of the optimized structures. The optimized interlayer spacing of SiC graphitic-like multilayer sheets has been found to depend on the ordering of atoms in different layers of the SiC graphitic-like structure (0.37 nm for the Si-C sequence of bilayer arrangement versus 0.48 nm for either the Si-Si or the C-C sequence of bilayer arrangement). These observations may be attributed to the Coulomb interactions due to the charge redistribution among Si and C atoms. On the other hand, the existence of two different ranges of interlayer separation in SiC double-walled nanotubes (0.38 nm for zigzag and 0.48 nm for armchair) is found to be related to whether the dominant interlayer neighbors are of the Si-C type or the Si-Si and C-C types.

Tuning the Electronic Structures of Semiconducting SiC Nanotubes by N and NHx (x=1,2) Groups.

Structure and thermophysical properties of single-wall Si nanotubes

Density-Functional Theory Calculations of Xh3-Decorated Sic Nanotubes (X={C, Si}): Structures, Energetics, and Electronic Structures

Theoretical studies on the optical properties of group-III elements doped SiCNTs

Electronic Properties Of Single-Walled Silicon Nanotubes Compared To Carbon Nanotubes

Bonding Nature, Structural Optimization, and Energetics studies of SiC Graphitic-Like layer Structures and Single/Double Walled Nanotubes

Effects of chiral indices on the atomic arrangements and electronic properties of Si double-walled nanotubes (6,min)@(9,mout) (min = 0 to 6, mout = 0 to 9) by SCC-DFTB calculations

Tuning the Electronic Properties of Single-Walled SiC Nanotubes by External Electric Field

Geometric and Electronic Structures of Hydrogen-Stabilized Silicon Nitride Nanosheets and Nanotubes

Investigation on Influence of Antisite Defects on Electronic Structure and Optical Properties of Silicon Carbide Nanotube

Size- and Surface-Dependent Electronic Structures of Crystalline SiC Nanotubes

Functional group induced transformations in stacking and electron structure in Mo2CT x/NiS heterostructures

Controlling the electronic transport through the carbon nanotube junction by local electronic environment

Structures and properties of nano-XNH2 (X = C, Si, Ge, and Sn)

Electronic and Optical properties of TM-doped (8,0) SiC SWNT and the prospect of hydrogen storage

Essential Electronic Properties of Silicon Nanotubes

Electronic Structures and Optical Properties of 6H-and 3C-Sic Microstructures and Nanostructures from X-Ray Absorption Fine Structures, X-Ray Excited Optical Luminescence, and Theoretical Studies

First Principle Study on the Structure and Electronic Property of Si Nanotubes

Functional Group Induced Transformations in Stacking and Electron Structure in Mo 2 CT x /NiS Heterostructures

Tunable electrical and magnetic properties of 2D SiC via adsorption and doping of atmospheric elements (H, C, N, and O)

Excitonic effects in the optical properties of SiC sheet and nanotubes