Theoretical studies on the optical properties of group-III elements doped SiCNTs

Pei Gong,Ying-Ying Yang,Wan-Duo Ma,Xiao-Yong Fang,Xi-Li Jing,Mao-Sheng Cao
DOI: https://doi.org/10.1016/j.optmat.2021.111148
IF: 3.754
2021-07-01
Optical Materials
Abstract:<p>Silicon carbide nanotubes (SiCNTs) have broad application prospects in optoelectronic devices. Based on first principles calculation, the influence of group III elements X (X = B, Al, Ga and In) doping on the optical properties of SiCNTs was studied. At 250–620 nm, because the hole concentration of X<sub>C</sub>-SiCNTs (when C is substituted) is less than that of X<sub>Si</sub>-SiCNTs (when Si is substituted), the minority carrier lifetime is longer than that of X<sub>Si</sub>-SiCNTs, therefore, the absorption peak of X<sub>C</sub>-SiCNTs is low and wide, while that of X<sub>Si</sub>-SiCNTs is high and narrow. Starting from 400 THz to 500 THz, with the increase of photo-generated carriers, the photoconductivity of X<sub>Si</sub>-SiCNTs and X<sub>C</sub>-SiCNTs increases, reaching the maximum at 700–800 THz. As the recombination rate increases, the conductivity begins to decrease, and it drops to a minimum near 1000 THz. Both dielectric constant and reflectivity show that SiCNTs doped with Si sites exhibit metallic characteristics at 340–380 nm.</p>
materials science, multidisciplinary,optics
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