Abstract:Superlattices with thermal-insulating behaviors have been studied to design thermoelectric materials but affect heat transfer in only one main direction and often show many cracks and dislocations near their layer interfaces. Quantum-dot (QD) self-assembly is an emerging epitaxial technology to design ultradense arrays of germanium QDs in silicon for many promising electronic and photonic applications such as quantum computing, where accurate QD positioning is required. We theoretically demonstrate that high-density three-dimensional (3D) arrays of molecular-size self-assembled Ge QDs in Si can also show very low thermal conductivity in the three spatial directions. This physical property can be considered in designing new silicon-based crystalline thermoelectric devices, which are compatible with the complementary metal-oxide-semiconductor (CMOS) technologies. To obtain a computationally manageable model of these nanomaterials, we investigate their thermal-insulating behavior with atomic-scale 3D phononic crystals: A phononic-crystal period or supercell consists of diamond-cubic (DC) Si cells. At each supercell center, we substitute Si atoms by Ge atoms in a given number of DC unit cells to form a boxlike nanoparticle (i.e., QD). The nanomaterial thermal conductivity can be reduced by several orders of magnitude compared with bulk Si. A part of this reduction is due to the significant decrease in the phonon group velocities derived from the flat dispersion curves, which are computed with classical lattice dynamics. Moreover, according to the wave-particle duality at small scales, another reduction is obtained from multiple scattering of the particlelike phonons in nanoparticle clusters, which breaks their mean free paths (MFPs) in the 3D nanoparticle array. However, we use an incoherent analytical model of this particlelike scattering. This model leads to overestimations of the MFPs and thermal conductivity, which is nevertheless lower than the minimal Einstein limit of bulk Si and is reduced by a factor of at least 165 compared with bulk Si in an example nanomaterial. We expect an even larger decrease in the thermal conductivity than that predicted in this paper owing to multiple scattering, which can lead to a ZT much larger than unity.

Electronic and thermoelectric properties of atomically thin C<sub>3</sub>Si<sub>3</sub>/C and C<sub>3</sub>Ge<sub>3</sub>/C superlattices.

Dual Effects of Hetero-Interfaces on Phonon Thermal Transport Across Graphene/c3n Lateral Superlattices

Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices

Enhanced Thermoelectric Performance in Three-Dimensional Superlattice of Topological Insulator Thin Films

GeAs_2: A Ⅳ-Ⅴ Group 2D Semiconductor with Ultralow Thermal Conductivity and High Thermoelectric Efficiency

Thermal Conductivity of GaAs/Ge Nanostructures

GeAs2: A IV–V Group Two-Dimensional Semiconductor with Ultralow Thermal Conductivity and High Thermoelectric Efficiency

Atomic-Scale Three-Dimensional Phononic Crystals With a Very Low Thermal Conductivity to Design Crystalline Thermoelectric Devices

Ultrahigh Thermoelectric Performance in RbGeI3/CsSnI3 Superlattices

Thermal transport of graphene-C 3 B superlattices and van der Waals heterostructures: A molecular dynamics study

First-principles and Molecular Dynamics Study of Thermoelectric Transport Properties of N-type Silicon-Based Superlattice-Nanocrystalline Heterostructures

Thermal transport in two-dimensional C3N/C2N superlattices: A molecular dynamics approach

Transport properties and thermoelectric effects in gated silicene superlattices

Electronic Structures and Band Offsets of Heterocrystalline Superlattices (3C-Aln)3n/(2h-aln)2…

Effect of AFM ordering on thermoelectric responses of Mg3X2(X: C, Si, Ge) monolayers : a DFT insight

Electronic and Thermal Properties of $\text{GeTe/Sb}_{2}\text{Te}_{3}$ Superlattices by ab-initio Approach: Impact of Van der Waals Gaps on Vertical Lattice Thermal Conductivity

Optical properties and Mechanical properties of C, Si, Ge and 3C-SiC Materials Calculated from First Principles Theory

Mechanical and Lattice Thermal Properties of Si-Ge Lateral Heterostructures

Study of electronic, optical, thermodynamic, and thermoelectric properties of GeC bulk and monolayer structure

Phonon Transport in Two-Dimensional Carbon-Boron Material and Heterointerfaces

Tunable Thermal Conductivity of Two-Dimensional SiC Nanosheets by Grain Boundaries: Implications for the Thermo-Mechanical Sensor