Abstract:Thermoelectric superlattices are expected to decouple the strong correlation between various thermoelectric parameters, and are an important strategy for excellent thermoelectric performances. The superlattices of (Bi 2 ) m (Bi 2 Te 3 ) n homologous series are well-known for low lattice thermal conductivity and intriguing topological surface states. However, the impacts of electronic structure on the thermoelectric performance were still not well-understood in (Bi 2 ) m (Bi 2 Te 3 ) n . To cope with this issue, Bi 2 -Bi 2 Te 3 superlattice-like films with adjustable Bi 2 /(Bi 2 +Bi 2 Te 3 ) molar ratio ( R ) were successfully fabricated by the molecular beam epitaxy technique. Angle-resolved photoemission spectroscopy measurements combined with theoretical calculations revealed the conduction band evolution from single-valley to multivalley as R >= 0.30, leading to intrinsically high carrier effective mass and improved thermoelectric power factor. Also, the superlattice film ( R = 0.46) with the structure close to Bi 4 Te 3 possesses the topological surface state feature around the high symmetry point. As a result of the high effective mass of 3.9 m 0 and very high electron density of 2.31 x 10 21 cm -3 , the film with R = 0.46 acquired the highest power factor of 1.49 mW.m -1 .K -2 at 420 K, outperforming that of other (Bi 2 ) m (Bi 2 Te 3 ) n superlattices. This work lays an essential foundation on understanding the electronic structure and further improving thermoelectric performances of (Bi 2 ) m (Bi 2 Te 3 ) n homologous series. (c) 2023 The Authors. Published by Elsevier B.V. on behalf of The Chinese Ceramic Society. This is an open access article under the CC BY -NC -ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).

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