Abstract:Thermoelectric (TE) devices have been attracting increasing attention because of their ability to convert heat directly to electricity. To date, improving the TE figure of merit remains the key challenge. The advent of the topological insulator and the emerging nanotechnology open a new way to design high-performance TE devices. In this paper, we investigate the TE transport properties of the Bi2Se3 thin film by the first-principle calculations and the Boltzmann transport theory. By comparing our calculations with the earlier experimental data, we demonstrate that, for the Bi2Se3 film of thickness larger than six quintuple layers, the relaxation time of the topological surface states in the bulk gap is about hundreds of femtoseconds, which is about two orders larger than that of the bulk states. Such a large relaxation-time difference causes the ratio of the electrical conductance to the thermal conductance much larger than the value predicted by the Wiedemann-Franz law, as well as the large magnitude of Seebeck coefficient, and consequently the large TE figure of merit, when the Fermi level is near the conduction band edge. We shows that the TE performance can be further improved by introducing defects in the middle layers of the thin film. The improvement is generally significant at room temperature and can be further enhanced at higher temperature.

What problem does this paper attempt to address?

### Problems the paper attempts to solve This paper aims to solve the problem of low conversion efficiency of thermoelectric materials (TE). Specifically, the author studied the mechanism of enhancing thermoelectric properties in thin films of three - dimensional topological insulators (3D TIs). By combining first - principles calculations and Boltzmann transport theory, the author explored the thermoelectric properties of Bi₂Se₃ films under different thicknesses and defect - introduction conditions. #### Main problems: 1. **Improving the figure of merit (zT)**: The application of current thermoelectric devices is limited by their low energy conversion efficiency, and improving zT is a key challenge to improve thermoelectric performance. 2. **Utilizing the characteristics of topological surface states (TSSs)**: Topological insulators have a unique electronic structure, especially the long - lifetime surface states (LLSs) within the bulk bandgap, and these characteristics can significantly affect thermoelectric performance. 3. **Optimizing film thickness and introducing defects**: Study the influence of Bi₂Se₃ films with different thicknesses and the introduction of intermediate - layer defects on thermoelectric performance, in order to find the optimal film thickness and defect configuration, thereby maximizing the thermoelectric figure of merit. ### Research methods and results 1. **Electronic structure calculation**: Use the projected - augmented - wave (PAW) method and density - functional theory (DFT) to calculate the electronic structure of Bi₂Se₃ films, especially focusing on films with a thickness greater than quintuple layers (QLs). \[ \text{The electronic structure calculation adopts the PAW method and DFT framework, and is carried out using Vienna Ab initio Simulation Package (VASP).} \] 2. **Transport property analysis**: Study thermoelectric parameters such as electrical conductivity, Seebeck coefficient and thermal conductivity of the films through the Boltzmann transport equation (BTE) and the dual - relaxation - time model. \[ \text{Electrical conductivity} \sigma = e^2 I_0 / \hbar \] \[ \text{Seebeck coefficient} S = -k_B / e \cdot I_1 / I_0 \] \[ \text{Electronic thermal conductivity} \kappa_e = k_B^2 T / \hbar \left( I_2 - I_1^2 / I_0 \right) \] 3. **Comparison with experimental data**: By comparing with existing experimental data, the theoretical calculation results were verified, and it was found that in Bi₂Se₃ films thicker than six - layer, the relaxation time of LLSs is two orders of magnitude larger than that of bulk states (SLSs). 4. **Influence of defect introduction**: Research shows that introducing defects in the intermediate layer can further shorten the relaxation time of SLSs without changing the relaxation time of LLSs, thereby significantly improving the thermoelectric performance at room temperature and high temperature. ### Conclusion Through the above research, the author has proved that in Bi₂Se₃ films, by using its special topological surface state characteristics, the thermoelectric figure of merit zT can be significantly improved. In addition, by optimizing the film thickness and introducing intermediate - layer defects, higher thermoelectric performance can be achieved at room temperature and high temperature. This research provides new ideas and methods for the development of high - performance thermoelectric materials.

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