Gradual Disassembly of Photosystem 2 In Vivo Induced by Excess Irradiance. A Hypothesis Based on Changes in 77 K Fluorescence Spectra of Chlorophyll a in Barley Leaves

M. Čajánek,M. Hudcová,J. Kalina,I. Lachetová,V. Špunda

DOI: https://doi.org/10.1023/A:1007168307931

1999-09-01

Abstract:

What problem does this paper attempt to address?

Achieving High Thermoelectric Performance in Bi 2 (Te, Se) 3 Thin Film with (00 l )-Oriented by Incorporating Tellurization and Selenization Processes

Zhuang-Hao Zheng,Ning Chen,Zi-Long Zhang,Jun-Ze Zhang,Dong Yang,Mohammad Nisar,Mazhar Hussain Danish,Fu Li,Shuo Chen,Jing-Ting Luo,Guang-Xing Liang,Yue-Xing Chen

DOI: https://doi.org/10.1021/acsami.4c13700

IF: 9.5

2024-10-16

ACS Applied Materials & Interfaces

Abstract:Flexible thermoelectric (TE) generators have received great attention as a sustainable and reliable option to convert heat from the human body and other ambient sources into electricity. This study provides a synthesis route that involves thermally induced diffusion to introduce Te and Se into Bi, fabricating an n-type Bi-Te-Se flexible thin film on a flexible substrate. This specific synthesis alters the crystal orientation (00l) of the thin film, improving in-plane electrical transportation...

materials science, multidisciplinary,nanoscience & nanotechnology
Flexible power generators by Ag2Se thin films with record-high thermoelectric performance

Dong Yang,Xiao-Lei Shi,Meng Li,Mohammad Nisar,Adil Mansoor,Shuo Chen,Yuexing Chen,Fu Li,Hongli Ma,Guang Xing Liang,Xianghua Zhang,Weidi Liu,Ping Fan,Zhuanghao Zheng,Zhi-Gang Chen

DOI: https://doi.org/10.1038/s41467-024-45092-7

2024-01-31

Abstract:Exploring new near-room-temperature thermoelectric materials is significant for replacing current high-cost Bi2Te3. This study highlights the potential of Ag2Se for wearable thermoelectric electronics, addressing the trade-off between performance and flexibility. A record-high ZT of 1.27 at 363 K is achieved in Ag2Se-based thin films with 3.2 at.% Te doping on Se sites, realized by a new concept of doping-induced orientation engineering. We reveal that Te-doping enhances film uniformity and (00l)-orientation and in turn carrier mobility by reducing the (00l) formation energy, confirmed by solid computational and experimental evidence. The doping simultaneously widens the bandgap, resulting in improved Seebeck coefficients and high power factors, and introduces TeSe point defects to effectively reduce the lattice thermal conductivity. A protective organic-polymer-based composite layer enhances film flexibility, and a rationally designed flexible thermoelectric device achieves an output power density of 1.5 mW cm-2 for wearable power generation under a 20 K temperature difference.
Flexible Bi2Te3/PEDOT nanowire sandwich-like films towards high-performance wearable cross-plane thermoelectric generator and temperature sensor array

Minzhi Du,Jianyong Ouyang,Kun Zhang

DOI: https://doi.org/10.1039/d3ta02876c

IF: 11.9

2023-06-27

Journal of Materials Chemistry A

Abstract:It is of significance to develop high-performance organic/inorganic hybrid thermoelectric (TE) materials for flexible cross-plane TE devices. In this work, we synthesize a flexible and free-standing sandwich-like TE film by depositing Bi 2 Te 3 nanocrystals into a conducting porous PEDOT nanowire scaffold. The mechanically robust Bi 2 Te 3 @PEDOT nanowire film exhibits a record Seebeck coefficient of 266.4 μV K −1 with a corresponding power factor of 740.2 μW m −1 K −2 and a zT value of 0.27 at room temperature. Afterwards, we build new types of wearable cross-plane TE generator (TEG) and TE-powered temperature sensor array with a reduced number of electric leads in comparison to traditional designs. The TEG shows a maximum output power density of 3.48 μW cm −2 at a temperature difference of 17.8 K (predicted output power density of 70.6 μW cm −2 at Δ T = 80 K), outperforming most of the organic and organic/inorganic based ones. The conformal TE-powered temperature sensor array exhibits high and stable thermal sensitivity with a resolution of 0.05 K.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Bi 2 Te 3 -based flexible thermoelectric generator for wearable electronics

Qi Zou,Hongjing Shang,Daxing Huang,Bowei Xie,Lin Zhang,Kai Wang,Hao Dong,Congmeng Li,Hongwei Gu,Fazhu Ding

DOI: https://doi.org/10.1063/5.0078389

IF: 4

2022-01-10

Applied Physics Letters

Abstract:The rapid development of the Internet of Things increases the demand for wearable devices. Compared with traditional chemical batteries, flexible thermoelectric technology contributes a solution for solving the power supply of wearable electronics. Here, we prepared n-type Bi2Te3 and p-type Bi0.5Sb1.5Te3 flexible thermoelectric films by the magnetron sputtering method, where the thermoelectric performance and their microstructures are systematically studied. The carrier concentration and mobility are optimized by adjusting the deposition temperature, eventually improving the thermoelectric performance and achieving the room-temperature power factors of 3.2 and 6.1 μW cm−1 K−2 for Bi2Te3 and Bi0.5Sb1.5Te3 films, respectively. Furthermore, after being bent 900 times with a radius of 5 mm, the resistance of these films barely increases, demonstrating the great potential for applications in wearable electronics. In order to further evaluate the practicability, these films are used to design a flexible thermoelectric generator, in which output performance improves with the increase in the temperature difference. The power density is up to ∼218.8 μW cm−2 at temperature differences of ∼41 K.

physics, applied
Realizing High-Efficiency Thermoelectric Module by Suppressing Donor-Like Effect and Improving Preferred Orientation in N-Type Bi2(Te, Se)3

Yichen Li,Shulin Bai,Yi Wen,Zhe Zhao,Lei Wang,Shibo Liu,Junqing Zheng,Siqi Wang,Shan Liu,Dezheng Gao,Dongrui Liu,Yingcai Zhu,Qian Cao,Xiang Gao,Hongyao Xie,Li-Dong Zhao

DOI: https://doi.org/10.1016/j.scib.2024.04.034

IF: 18.9

2024-01-01

Science Bulletin

Abstract:Thermoelectric materials have a wide range of application because they can be directly used in refrigeration and power generation. And the Bi2Te3 stand out because of its excellent thermoelectric performance and are used in commercial thermoelectric devices. However, n-type Bi2Te3 has seriously hindered the development of Bi2Te3-based thermoelectric devices due to its weak mechanical properties and inferior thermoelectric performance. Therefore, it is urgent to develop a high-performance n-type Bi2Te3 polycrystalline. In this work, we employed interstitial Cu and the hot deformation process to optimize the thermoelectric properties of Bi2Te2.7Se0.3, and a high-performance thermoelectric module was fabricated based on this material. Our combined theoretical and experimental effort indicates that the interstitial Cu reduce the defect density in the matrix and suppresses the donor-like effect, leading to a lattice plainification effect in the material. In addition, the two-step hot deformation process significantly improves the preferred orientation of the material and boosts the mobility. As a result, a maximum ZT of 1.27 at 373 K and a remarkable high ZTave of 1.22 across the temperature range of 300−425 K are obtained. The TEG (7-pair) and TEC (127-pair) modules were fabricated with our n-type textured Cu0.01Bi2Te2.7Se0.3 coupled with commercial p-type Bi2Te3. The TEC module demonstrates superior cooling efficiency compared to the commercial Bi2Te3 device, achieving a ΔT of 65 and 83.4 K when the hot end temperature at 300 and 350 K, respectively. In addition, the TEG module attains an impressive conversion efficiency of 6.5% at a ΔT of 225 K, which is almost the highest value among the reported Bi2Te3-based TEG modules.
Directional Thermal Diffusion Realizing Inorganic Sb2Te3/Te Hybrid Thin Films with High Thermoelectric Performance and Flexibility

Meng Wei,Xiao‐Lei Shi,Zhuang‐Hao Zheng,Fu Li,Wei‐Di Liu,Li‐Ping Xiang,Yang‐Su Xie,Yue‐Xing Chen,Jing‐Yi Duan,Hong‐Li Ma,Guang‐Xing Liang,Xiang‐Hua Zhang,Ping Fan,Zhi‐Gang Chen

DOI: https://doi.org/10.1002/adfm.202207903

IF: 19

2022-09-02

Advanced Functional Materials

Abstract:A high ZT of ≈1 at 453 K is achieved in an inorganic Sb2Te3/Te hybrid thin film via a novel directional thermal diffusion reaction growth method with extraordinary flexibility, and the rationally designed flexible device shows a high power density by a low‐temperature difference. Inorganic films possess much higher thermoelectric performance than their organic counterparts, but their poor flexibilities limit their practical applications. Here, Sb2Te3/Tex hybrid thin films with high thermoelectric performance and flexibility, fabricated via a novel directional thermal diffusion reaction growth method are reported. The directional thermal diffusion enables rationally tuning the Te content in Sb2Te3, which optimizes the carrier density and leads to a significantly enhanced power factor of >20 μW cm–1 K–2, confirmed by both first‐principles calculations and experiments; while dense boundaries between Te and Sb2Te3 nanophases, contribute to the low thermal conductivity of ≈0.86 W m–1 K–1, both induce a high ZT of ≈1 in (Sb2Te3)(Te)1.5 at 453 K, ranking as the top value among the reported flexible films. Besides, thin films also exhibit extraordinary flexibility. A rationally designed flexible device composed of (Sb2Te3)(Te)1.5 thin films as p‐type legs and Bi2Te3 thin films as n‐type legs shows a high power density of >280 μW cm–2 at a temperature difference of 20 K, indicating a great potential for sustainably charging low‐power electronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Remarkable average thermoelectric performance of the highly oriented Bi(Te, Se)-based thin films and devices

Zhiliang Li,Xiaoqi Yang,Zhi Gao,Jingxuan Wang,Yuli Xue,Jianglong Wang,Qian Cao,Zhihai Ding,Shufang Wang

DOI: https://doi.org/10.1016/j.jmat.2023.06.008

IF: 8.589

2023-07-08

Journal of Materiomics

Abstract:Highlights • Highly oriented Bi(Te, Se)-based thin films are prepared via PLD technology. • Remarkable average PF (∼24.4 μW cm −1 ·K −2 ) and estimated- zT (∼0.81) are achieved in the films. • The maximum output power density of the film device reaches up to ∼30.1 W/m 2 . Bi(Te, Se)-based compounds have attracted lots of attention for nearly two centuries as one of the most successful commercial thermoelectric (TE) materials due to their high performance at near room temperature. Compared with 3D bulks, 2D thin films are more compatible with modern semiconductor technology and have unique advantages in the construction of micro- and nano-devices. For device applications, high average TE performance over the entire operating temperature range is critical. Herein, highly c -axis-oriented N-type Bi(Te, Se) epitaxial thin films have been successfully prepared using the pulsed laser deposition technology by adjusting the deposition temperature. The film deposited at ∼260 °C demonstrate a remarkable average power factor (PF ave ) of ∼24.4 μW cm −1 ·K −2 over the temperature range of 305–470 K, higher than most of the state-of-the-art Bi(Te, Se)-based films. Moreover, the estimated average zT value of the film is as high as ∼0.81. We then constructed thin-film TE devices by using the above oriented Bi(Te, Se) films, and the maximum output power density of the device can reach up to ∼30.1 W/m 2 under the temperature difference of 40 K. Predictably, the outstanding average TE performance of the highly oriented Bi(Te, Se) thin films will have an excellent panorama of applications in semiconductor cooling and power generation. Graphical abstract Download : Download high-res image (225KB) Download : Download full-size image

materials science, multidisciplinary,chemistry, physical,physics, applied
High‐Performance Industrial‐Grade p‐Type (Bi,Sb)2Te3 Thermoelectric Enabled by a Stepwise Optimization Strategy

Qiang Zhang,Minhui Yuan,Kaikai Pang,Yuyou Zhang,Ruoyu Wang,Xiaojian Tan,Gang Wu,Haoyang Hu,Jiehua Wu,Peng Sun,Guo‐Qiang Liu,Jun Jiang

DOI: https://doi.org/10.1002/adma.202300338

IF: 29.4

2023-03-04

Advanced Materials

Abstract:As the sole dominator of the commercial thermoelectric (TE) market, Bi2Te3‐based alloys play an irreplaceable role in Peltier cooling and low‐grade waste heat recovery. At present, the main barrier to a wider application is the relatively low efficiency determined by the low‐rise TE figure of merit ZT. Herein, an effective approach is reported for improving the TE performance of p‐type (Bi,Sb)2Te3 by incorporating Ag8GeTe6 and Se. Specifically, the diffused Ag and Ge atoms into the matrix conduce to optimized carrier concentration and enlarged the density of states effective mass while the Sb‐rich nanoprecipitates generate coherent interfaces with little loss of carrier mobility. The subsequent Se dopants introduce multiple phonon scattering sources and significantly suppress the lattice thermal conductivity while maintaining a decent power factor. Consequently, a high peak ZT of 1.53 at 350 K and a remarkable average ZT of 1.31 (300−500 K) are attained in the Bi0.4Sb1.6Te0.95Se0.05 + 0.10 wt% Ag8GeTe6 sample. Most noteworthily, the size and mass of the optimal sample have been enlarged to Ø40 mm‐200 g and the constructed 17‐couple TE module exhibits an extraordinary conversion efficiency η of 6.3% at ΔT = 245 K. This work demonstrates a facile method to develop high‐performance and industrial‐grade (Bi,Sb)2Te3‐based alloys, which paves a strong way for the further practical applications. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Realizing high thermoelectric performance in highly (0l0)-textured flexible Cu2Se thin film for wearable energy harvesting

Zhuang-Hao Zheng,Dong-Liang Zhang,Bushra Jabar,Tian-Bao Chen,Mohammad Nisar,Yun-Fei Chen,Fu Li,Shuo Chen,Guang-Xing Liang,Xiang-Hua Zhang,Ping Fan,Yue-Xing Chen

DOI: https://doi.org/10.1016/j.mtphys.2022.100659

IF: 11.021

2022-05-01

Materials Today Physics

Abstract:Searching for eco-friendly and earth-abundant materials to supersede traditional high-cost bismuth telluride for fabricating wearable devices is of great significance in thermoelectrics. In this work, promising flexible Cu2Se based thin films with high thermoelectric performance is successfully fabricated via a facile co-sputtering method. Experimental results indicate that excess Cu in Cu2Se films leads to the decrease of carrier concentration by suppressing the formation of Cu vacancies and donating electrons, benefiting to achieve high Seebeck coefficient. Moreover, Cu-excess Cu2Se films have highly (0l0) preferred orientation and extra high carrier mobility, maintaining the decent electrical conductivity in the whole measurement temperature range. Combined with the low thermal conductivity, a maximum ZT of 0.42 is obtained at 275 °C from the Cu-excess Cu2Se due to the simultaneous optimization both of electrical and heat transport. Subsequently, a flexible thermoelectric device assembled with high performance Cu2Se films exhibits a maximum power density of 4.28 Wm-2 at a temperature difference of 50 °C, which thermal stability is greatly improved after introducing a molybdenum buffer layer into electrode layer. Therefore, this work demonstrates that rational microstructure manipulations and connection technology improvement can achieve high performance in the flexible thermoelectric device, which possess potential in wearable applications.

materials science, multidisciplinary,physics, applied
Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3 ‐Based Thin Films

Ming Tan,Xiao‐Lei Shi,Wei‐Di Liu,Meng Li,Yaling Wang,Hui Li,Yuan Deng,Zhi‐Gang Chen

DOI: https://doi.org/10.1002/aenm.202102578

IF: 27.8

2021-09-15

Advanced Energy Materials

Abstract:Bi2Te3-based thin films are attracting increasing attention due to their considerable wearability and flexibility feature. However, the relatively low performance compared to their bulk counterparts limits their development and wider application. In this work, synergistic texturing and Bi/Sb-Te antisite doping are used to achieve a high room-temperature ZT of ≈1.5 in p-type Bi0.5Sb1.5Te3 thin films by a magnetron sputtering method. Structural characterization confirms that carefully tuning the deposition temperature can strengthen the texture of as-prepared polycrystalline Bi0.5Sb1.5Te3 thin films, leading to significantly enhanced carrier mobility and electrical conductivity. Simultaneously, rational engineering of the deposition temperature can induce antisite doping between Bi/Sb and Te, which can reduce the carrier concentration and make it closer to the optimized level. In turn, a high power factor of 45.3 µW cm−1 K−2 and a maximized ZT of ≈1.5 at room temperature are obtained. This high power factor and ZT are highly competitive to other state-of-the-art p-type thin-film-based thermoelectric materials, showing great potentials for practical applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
In Situ Synthesis of High Thermoelectric Performance Bi2Te3 Flexible Thin Films through Thermal Diffusion Engineering

Ning Chen,Dongwei Ao,Junji Guo,Wenke Bao,Yuexing Chen,Zhuanghao Zheng

DOI: https://doi.org/10.3390/coatings13122018

IF: 3.236

2023-11-30

Coatings

Abstract:Bi2Te3-based materials are promising candidates for near-room-temperature applications due to their high thermoelectric performance and low cost. Here, an innovative thermal diffusion strategy combined with magnetron sputtering and thermal evaporation methods was employed to fabricate Bi2Te3 flexible thin films (f-TFs) on a flexible polyimide substrate. An in situ synthesis of Bi2Te3 f-TFs with good crystallinity was obtained using a straightforward thermal diffusion method through diffusion of Te into a Bi precursor under low vacuum conditions (1 × 105 Pa). This method offers easy preparation, low cost, and a large-area film preparation for industrialization. The electrical conductivity increases with increasing thermal diffusion temperatures. A high room temperature carrier mobility of ~28.7 cm−2 V−1 S−1 and an electrical conductivity of ~995.6 S cm−1 can be achieved. Then, a moderate room temperature Seebeck coefficient >100 μV K−1 was obtained due to the chemical stoichiometry being close to the standard by optimizing the thermal diffusion temperature. Consequently, a maximum room temperature PF of ~11.6 μW cm−1 K−1 was observed in Bi2Te3 f-TFs prepared using a thermal diffusion temperature of 653 K. The thermal diffusion strategy applied in the thin film preparation represents an effective approach for the preparation of high thermoelectric performance Bi2Te3 f-TFs, offering a promising route for future thermoelectric applications.

materials science, multidisciplinary,physics, applied, coatings & films
[Pharmacological treatment of mild hypertension].

S. Umemura,M. Ishii

1992-05-01

Abstract:
Isovalent co-alloying contributes to considerable improvement in thermoelectric performance of BiSe bulks with weak anisotropy

Fu Li,Chen Liu,Mohammad Nisar,Jian Zhao,Chongbin Liang,Junze Zhang,Ziyuan Wang,Zhuanghao Zheng,Ping Fan,Xilin Wang,Zhen-Hua Ge,Yue-Xing Chen

DOI: https://doi.org/10.1016/j.jmat.2023.10.009

IF: 8.589

2023-11-10

Journal of Materiomics

Abstract:Highlights • BiSe based samples with high thermoelectric performance and weak anisotropy were successfully prepared. • Highest power factor of 12.8 μW/(cm·K 2 ) was achieved via isovalent co-doping of Sb and Te. • A BiSe based thermoelectric device with maximum energy conversion efficiency ∼ 4.0 % was firstly fabricated. BiSe with intrinsic low thermal conductivity has considered as a promising thermoelectric (TE) material at nearly room temperature. To improve its low thermoelectric figure of merit ( zT ), in this work, Sb and Te isovalent co-alloying was performed and significantly optimized its TE property with weakly anisotropic characteristic. After substituting Sb on Bi sites, the carrier concentration is suppressed by introduction of Sb Se site defects, which contributes to the increased absolute value of Seebeck coefficient (| S |). Further co-alloying Te on Se of the optimized composition Bi 0.7 Sb 0.3 Se, the carrier concentration increased without affecting the | S | due to the enhanced effective mass, which leads to a highest power factor of 12.8 μW/(cm·K 2 ) at 423 K. As a result, a maximum zT of ∼0.54 is achieved for Bi 0.7 Sb 0.3 Se 0.7 Te 0.3 along the pressing direction and the average zT ( zT ave ) (from 300 K to 623 K) are drastically improved from 0.24 for pristine BiSe sample to 0.45. Moreover, an energy conversion efficiency ∼4.0 % is achieved for a single leg TE device of Bi 0.7 Sb 0.3 Se 0.7 Te 0.3 when applied the temperature difference of 339 K, indicating the potential TE application. Graphical abstract Download : Download high-res image (331KB) Download : Download full-size image

materials science, multidisciplinary,chemistry, physical,physics, applied
High-performance flexible wavy-structure thermoelectric generator based on (Bi, Sb)2Te3 films for energy harvesting

Yujie Song,Hailong Yu,Yijun Ran,Hao Zeng,Wenxia Li,Juan He,Kaiping Tai,Zhi Yu

DOI: https://doi.org/10.1016/j.jpowsour.2024.234260

IF: 9.2

2024-04-01

Journal of Power Sources

Abstract:The development and advancement of thin-film thermoelectric generator (TEG) have significant implications in wearable electronics. However, the simultaneous achievement of higher power density, miniaturization, and flexibility in TEG has remained a significant challenge, impeding their widespread commercial application. Herein, high-performance inorganic thermoelectric films (Bi2Te3 and Bi0.5Sb1.5Te3) are employed compatibly deposited at polyimide (PI) substrate as the p/n legs to design and demonstrate a three-dimensional (3D) wavy-structure thin-film TEG. This 3D structure design enables vertical heat flow in the planar thin-film TEG, and effectively harnesses out-of-plane temperature differences. The integrated wavy-structure TEG without an additional heat sink, gives the highest open voltage of 54.6 mV under a vertical temperature gradient of 11 K, corresponding to a high normalized output power density of ∼10.6 μW cm−2 K−2, surpassing previously reported flexible thin film TEG by over 5 times. Moreover, the TEG exhibits excellent flexibility and stretchability which is beneficial for application on curved heat sources. The design strategy conceived in this work will promote the development of high-performance TEG for flexible and wearable applications.

energy & fuels,materials science, multidisciplinary,electrochemistry,chemistry, physical
Optimized thermoelectric properties of flexible p-type Sb2Te3 thin film prepared by a facile thermal diffusion method

Yi-liu Li,Wen-yu Yang,Yu-min Peng,Jia-min Yao,Yi-ming Zhong,Zi-long Zhang,Meng Wei,Guang-xing Liang,Ping Fan,Zhuang-hao Zheng

DOI: https://doi.org/10.1016/j.jallcom.2023.169730

IF: 6.2

2023-07-01

Journal of Alloys and Compounds

Abstract:Sb2Te3-based thermoelectric thin film is a competitive candidate for preparing thermoelectric thin film devices, which power the wearable electronic devices and chip-sensor of internet-of-things. In this work, a directed thermal diffusion reaction method was applied to synthesize p-type Sb2Te3 thin films synthesis at polyimide flexible substrate with self-assembled growth. A high power factor of 1.94 mWm−1K−2 with excellent flexibility which is very competitive among similar Sb2Te3 based materials by the control of synthesis condition, especially the chemical composition. Meanwhile, the performance of thermoelectric thin film device is limited by contact resistance. Thus the more systematic study of contact resistance, including choice of electrode material for the device was investigated. The results indicate that Mo/Sb2Te3 have the lowest contact resistivity compared with Al/Sb2Te3 and Ni/Sb2Te3. In addition, the fabricated flexible device with Mo electrode has outstanding thermal stability.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Exploring Material Properties and Device Output Performance of a Miniaturized Flexible Thermoelectric Generator Using Scalable Synthesis of Bi2Se3 Nanoflakes

Zicheng Yuan,Xueke Zhao,Canhui Wang,Shuang Hang,Mengyao Li,Yu Liu

DOI: https://doi.org/10.3390/nano13131937

IF: 5.3

2023-06-26

Nanomaterials

Abstract:Environmental heat-to-electric energy conversion presents a promising solution for powering sensors in wearable and portable devices. However, the availability of near-room temperature thermoelectric (TE) materials is highly limited, posing a significant challenge in this field. Bi2Se3, as a room-temperature TE material, has attracted much attention. Here, we demonstrate a large-scale synthesis of Bi2Se3 nanoflakes used for the microflexible TE generator. A high-performance micro-TE generator module, utilizing a flexible printed circuit, has been designed and fabricated through the process of screen printing. The TE generator configuration comprises five pairs of PN TE legs. The p-type TE leg utilizes commercially available Sb2Te3 powder, while the n-type TE leg employs Bi2Se3 nanoflakes synthesized in this study. For comparative purposes, we also incorporate commercially available Bi2Se3 powder as an alternative n-type TE leg. The optimal performance of the single-layer microflexible TE generator, employing Bi2Se3 nanoflakes as the active material, is achieved when operating at a temperature differential of 109.5 K, the open-circuit voltage (VOC) is 0.11 V, the short circuit current (ISC) is 0.34 mA, and the maximum output power (PMAX) is 9.5 μW, much higher than the generator consisting of commercial Bi2Se3 powder, which is expected to provide an energy supply for flexible electronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Carrier concentration and orientation optimization for high performance (Sb,Bi) 2 Te 3 thermoelectric films via magnetron co-sputtering

Guojuan Qiu,Juan Li,Yifeng Ling,Guoying Dong,Jianghe Feng,Ping Zhang,Ruiheng Liu

DOI: https://doi.org/10.1016/j.jallcom.2023.169916

IF: 6.2

2023-04-06

Journal of Alloys and Compounds

Abstract:High performance flexible thermoelectric thin films are desired for power generation of flexible thermoelectric device. Thermoelectric performance of (Sb,Bi) 2 Te 3 films are determined by the Te content in the matrix as anti-site defect dominates the carrier concentration. By controlling the Te target co-sputtering power, annealing temperature and time, not only the film in-plane orientation is enhanced, the carrier concentration is also effectively controlled in this work. Through a systematically investigation of Te content dependence of the thermoelectric performance, the carrier concentration and orientation is optimized through tuning Te content, and a high power factor of ∼32 μ W/cm-K 2 for Sb 2 Te 3 film, ∼36 μ W/cm-K 2 for Bi 0.5 Sb 1.5 Te 3 film is realized in in-plane orientation. Besides, The thermal conductivity along in-plane direction is determined by photon-electro-thermal (TPET) technique, and the final zT values are ∼0.49 for Sb 2 Te 3 , and ∼0.58 for Bi 0.5 Sb 1.5 Te 3 films at room temperature, respectively.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Defect Engineering Stabilized AgSbTe2 with High Thermoelectric Performance

Yu Zhang,Zhi Li,Saurabh Singh,Amin Nozariasbmarz,Wenjie Li,Aziz Genç,Yi Xia,Luyao Zheng,Seng Huat Lee,Sumanta Kumar Karan,Na Liu,Sanghadasa Mf Mohan,Zhiqiang Mao,Andreu Cabot,Christopher Wolverton,Bed Poudel,Shashank Priya,Gagan Goyal

DOI: https://doi.org/10.1002/adma.202208994

IF: 29.4

2022-12-26

Advanced Materials

Abstract:Thermoelectric (TE) generators enable the direct and reversible conversion between heat and electricity, providing applications in both refrigeration and power generation. The grand challenge in the field is related to the low conversion efficiency of TE devices. In the last decade, several TE materials with relatively high figures of merit (zT) have been reported in low‐ and high‐temperature regimes. However, there is an urgent demand for high‐performance TE materials working in the mid‐temperature range (400‐700 K). Herein, p‐type AgSbTe2 materials stabilized with S and Se co‐doping are demonstrated to exhibit an outstanding maximum figure of merit (zTmax) of 2.3 at 673 K and an average figure of merit (zTave) of 1.59 over the wide temperature range of 300 – 673 K. This exceptional performance arises from an enhanced carrier density resulting from a higher concentration of silver vacancies, a vastly improved Seebeck coefficient enabled by the flattening of the valence band maximum and the inhibited formation of n‐type Ag2Te, and a highly improved stability beyond 673 K. The optimized material is used to fabricate a single‐leg device with efficiencies of up to 13.3% and an unicouple TE device reaching energy conversion efficiencies up to 12.3% at a temperature difference of 370 K. These results highlight an effective strategy to engineer high‐performance TE material for cost‐effective waste heat recovery in the mid‐temperature range. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Ti-doping inducing high-performance flexible p-type Bi0.5Sb1.5Te3-based thin film

Fan Ma,Dongwei Ao,Xiangdong Liu,Wei-Di Liu

DOI: https://doi.org/10.1016/j.ceramint.2023.02.233

IF: 5.532

2023-06-01

Ceramics International

Abstract:Bi2Te3-based flexible thermoelectric power generator is a competitive candidate for wearable electronics. However, the strongly coupled Seebeck coefficient and electrical conductivity limits thermoelectric performance of p-type Bi0.5Sb1.5Te3-based flexible thin films (f-TFs). In this work, we report Ti-doping by a magnetron co-sputtering method can strengthen the texture orientation of as-prepared Bi0.5Sb1.5Te3-based f-TFs and correspondingly contribute to a high electrical conductivity of 532.69 S cm−1 at room temperature. Under simultaneously optimized carrier concentration (n h ), a high Seebeck coefficient of ∼196.15 μV K−1 and an high room-temperature power factor of ∼19.67 μW cm−1 K−2 have been achieved. A 3 single-leg flexible thermoelectric device demonstrates high applicability. Simultaneously, the as-prepared Ti-doped Bi0.5Sb1.5Te3 f-TFs and device demonstrate high bending resistance as evidenced by the <10% change of thermoelectric performance before and after bending. Our study indicates that Ti-doping can simultaneously tune the texture orientation and n h of Bi0.5Sb1.5Te3-based f-TFs and achieve high thermoelectric performance.

materials science, ceramics
High Thermoelectric Performance and Ultrahigh Flexibility Ag 2 S 1- x Se x film on a Nylon Membrane

Miaomiao Wu,Jiajia Li,Ying Liu,Zixing Wang,Ping Wei,Wenyu Zhao,Kefeng Cai

DOI: https://doi.org/10.1021/acsami.2c21987

IF: 9.5

2023-02-07

ACS Applied Materials & Interfaces

Abstract:Flexible thermoelectric (TE) generators have recently attracted increasing attention as they have the potential to power wearable devices using the temperature difference between the human body and the environment. Ag(2)S is recently reported to have plasticity near room temperature; however, it has very low electrical conductivity, leading to its poor TE property. Here, to improve the TE property, different amounts of Se (Se/Ag(2)S molar ratios being 0.4, 0.5, and 0.6) solid...

materials science, multidisciplinary,nanoscience & nanotechnology

Gradual Disassembly of Photosystem 2 In Vivo Induced by Excess Irradiance. A Hypothesis Based on Changes in 77 K Fluorescence Spectra of Chlorophyll a in Barley Leaves

Achieving High Thermoelectric Performance in Bi 2 (Te, Se) 3 Thin Film with (00 l )-Oriented by Incorporating Tellurization and Selenization Processes

Flexible power generators by Ag2Se thin films with record-high thermoelectric performance

Flexible Bi2Te3/PEDOT nanowire sandwich-like films towards high-performance wearable cross-plane thermoelectric generator and temperature sensor array

Bi 2 Te 3 -based flexible thermoelectric generator for wearable electronics

Realizing High-Efficiency Thermoelectric Module by Suppressing Donor-Like Effect and Improving Preferred Orientation in N-Type Bi2(Te, Se)3

Directional Thermal Diffusion Realizing Inorganic Sb2Te3/Te Hybrid Thin Films with High Thermoelectric Performance and Flexibility

Remarkable average thermoelectric performance of the highly oriented Bi(Te, Se)-based thin films and devices

High‐Performance Industrial‐Grade p‐Type (Bi,Sb)2Te3 Thermoelectric Enabled by a Stepwise Optimization Strategy

Realizing high thermoelectric performance in highly (0l0)-textured flexible Cu2Se thin film for wearable energy harvesting

Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3 ‐Based Thin Films

In Situ Synthesis of High Thermoelectric Performance Bi2Te3 Flexible Thin Films through Thermal Diffusion Engineering

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Isovalent co-alloying contributes to considerable improvement in thermoelectric performance of BiSe bulks with weak anisotropy

High-performance flexible wavy-structure thermoelectric generator based on (Bi, Sb)2Te3 films for energy harvesting

Optimized thermoelectric properties of flexible p-type Sb2Te3 thin film prepared by a facile thermal diffusion method

Exploring Material Properties and Device Output Performance of a Miniaturized Flexible Thermoelectric Generator Using Scalable Synthesis of Bi2Se3 Nanoflakes

Carrier concentration and orientation optimization for high performance (Sb,Bi) 2 Te 3 thermoelectric films via magnetron co-sputtering

Defect Engineering Stabilized AgSbTe2 with High Thermoelectric Performance

Ti-doping inducing high-performance flexible p-type Bi0.5Sb1.5Te3-based thin film

High Thermoelectric Performance and Ultrahigh Flexibility Ag 2 S 1- x Se x film on a Nylon Membrane