Ti-doping inducing high-performance flexible p-type Bi0.5Sb1.5Te3-based thin film

Fan Ma,Dongwei Ao,Xiangdong Liu,Wei-Di Liu

DOI: https://doi.org/10.1016/j.ceramint.2023.02.233

IF: 5.532

2023-06-01

Ceramics International

Abstract:Bi2Te3-based flexible thermoelectric power generator is a competitive candidate for wearable electronics. However, the strongly coupled Seebeck coefficient and electrical conductivity limits thermoelectric performance of p-type Bi0.5Sb1.5Te3-based flexible thin films (f-TFs). In this work, we report Ti-doping by a magnetron co-sputtering method can strengthen the texture orientation of as-prepared Bi0.5Sb1.5Te3-based f-TFs and correspondingly contribute to a high electrical conductivity of 532.69 S cm−1 at room temperature. Under simultaneously optimized carrier concentration (n h ), a high Seebeck coefficient of ∼196.15 μV K−1 and an high room-temperature power factor of ∼19.67 μW cm−1 K−2 have been achieved. A 3 single-leg flexible thermoelectric device demonstrates high applicability. Simultaneously, the as-prepared Ti-doped Bi0.5Sb1.5Te3 f-TFs and device demonstrate high bending resistance as evidenced by the <10% change of thermoelectric performance before and after bending. Our study indicates that Ti-doping can simultaneously tune the texture orientation and n h of Bi0.5Sb1.5Te3-based f-TFs and achieve high thermoelectric performance.

materials science, ceramics