Assembly‐Free Fabrication of High‐Performance Flexible Inorganic Thin‐Film Thermoelectric Device Prepared by a Thermal Diffusion

Dong‐Wei Ao,Wei‐Di Liu,Zhuang‐Hao Zheng,Xiao‐Lei Shi,Meng Wei,Yi‐Ming Zhong,Meng Li,Guang‐Xing Liang,Ping Fan,Zhi‐Gang Chen

DOI: https://doi.org/10.1002/aenm.202202731

IF: 27.8

2022-09-16

Advanced Energy Materials

Abstract:In this study, highly flexible inorganic thin‐films device through one‐step thermal diffusion synthesis process is successfully prepared. It secures good contact between the electrodes and the thermoelectric legs through in situ growth of the electrode, together with the highly crystallized Sb2Te3 and Bi2Te3 thermoelectric legs, contributing to ultralow relative contact resistance and high thermoelectric device performance. High relative contact electrical resistance and poor flexibility in inorganic thin‐film thermoelectric devices significantly limit their practical applications. To overcome this challenge, a one‐step thermal diffusion method to fabricate assembly‐free inorganic thin‐film thermoelectric devices is developed, where the in situ grown electrode delivers an excellent leg‐electrode contact, leading to high output power and flexibility in the prepared p‐type Sb2Te3/n‐type Bi2Te3 thin‐film device, which is composed of 8 pairs of p‐n junctions. Such a device shows a very low relative contact electrical resistance of 7.5% and a high power density of 1.42 mW cm–2 under a temperature difference of 60 K. Less than 10% change of the whole electrical resistance before and after bending test indicates the robust bending resistance and stability of the device. This study indicates that the novel assembly‐free one‐step thermal diffusion method can effectively enhance the leg‐electrode contact, the device thermoelectric performance, bending resistance, and stability, which can inspire the development of thin‐film thermoelectric devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels