Use of distal Thiersch-Duplay urethroplasty for proximal hypospadias repairs in conjunction with short island pedicle flap.

M. Zaontz,W. Kaplan,E. Ritchie

DOI: https://doi.org/10.1016/S0090-4295(90)80288-X

IF: 2.633

1990-11-01

Urology

Abstract:

What problem does this paper attempt to address?

Microstructure and thermoelectric properties of porous Bi 2 Te 2.85 Se 0.15 bulk materials fabricated by semisolid powder processing

Deqing Mei,Hui Wang,Yang Li,Zhehe Yao,Tiejun Zhu

DOI: https://doi.org/10.1557/jmr.2015.142

IF: 2.7

2015-01-01

Journal of Materials Research

Abstract:Semisolid powder processing (SPP) was used to fabricate n-type bismuth telluride-based polycrystalline bulk materials with improved thermoelectric properties. The minimum lattice thermal conductivity and the maximum ZT value of the SPP sample obtained in this study are 0.163 W m −1 K −1 at 383 K and 0.89 at 423 K, respectively. This ZT value exhibited a significant enhancement of 65.7 and 101.3% compared with the hot-pressing and the die-casting counterparts, respectively. The reduction of the lattice thermal conductivity is mainly due to the nanoscale grains and the mesoscale pores induced by the SPP. The grain boundaries and the interfaces brought by the porosities could scatter the phonons with mean free paths extensively from 300 nm to 1 μm. The remarkable enhancement of the ZT value and the convenient fabricating process suggest that the SPP is a promising method for mass production of high-performance bismuth telluride-based polycrystalline bulk materials.
Enhanced electrical and mechanical properties of Bi2Te3-based thermoelectric thick films enabled by a practical dynamic regulation strategy

Jie Zhou,Wei Zhu,Qingqing Zhang,Guangyu Han,YuTong Liu,Zhanpeng Guo,Siming Guo,Yue Huang,Yuan Deng

DOI: https://doi.org/10.1016/j.jmat.2023.07.010

IF: 8.589

2023-08-01

Journal of Materiomics

Abstract:The application of high-density and high-performance micro thermoelectric devices is still in its infancy, mainly restricted by the low performance of Bi2Te3-based thick film as well as the limited device integration. In this study, we proposed a dynamic regulation strategy to simultaneously strengthen the thermoelectric and mechanical properties for n-type Bi2Te3-based thick films. The effects of growth temperature and time on thermoelectric properties have been firstly explored. As the thermoelectric properties exhibit consistent degradation with increasing thickness at static growth temperature, an effective rising temperature method is introduced to dynamically regulate the nucleation rate and growing diffusion ability. Thus, the grain refinement with compact texture structure leads to a relatively large carrier mobility (77.1 cm2 V−1 s−1) and appropriate concentration (5.25 × 1019 cm−3) as well as further 12 % improvement of power factor with an average value up to 12.0 μW cm−1 K−2 over a wide temperature ranging from 313 K to 453 K. Furthermore, significant enhancement of mechanical property is also achieved with high elastic modules (56.03 GPa), hardness (0.63 GPa) and large energy dissipation capacity to prevent micro-cracks. This study provides a practical solution with dynamic temperature control to fabricate high-performance Bi2Te3 thick films with enhanced mechanical property and processing feasibility for micro thermoelectric devices.

materials science, multidisciplinary,chemistry, physical,physics, applied
Melt-Centrifuged (bi,sb)2 Te3 : Engineering Microstructure Toward High Thermoelectric Efficiency.

Yu Pan,Umut Aydemir,Jann A. Grovogui,Ian T. Witting,Riley Hanus,Yaobin Xu,Jinsong Wu,Chao-Feng Wu,Fu-Hua Sun,Hua-Lu Zhuang,Jin-Feng Dong,Jing-Feng Li,Vinayak P. Dravid,G. Jeffrey Snyder

DOI: https://doi.org/10.1002/adma.201802016

IF: 29.4

2018-01-01

Advanced Materials

Abstract:Microstructure engineering is an effective strategy to reduce lattice thermal conductivity (kappa(l)) and enhance the thermoelectric figure of merit (zT). Through a new process based on melt-centrifugation to squeeze out excess eutectic liquid, microstructure modulation is realized to manipulate the formation of dislocations and clean grain boundaries, resulting in a porous network with a platelet structure. In this way, phonon transport is strongly disrupted by a combination of porosity, pore surfaces/junctions, grain boundaries, and lattice dislocations. These collectively result in a approximate to 60% reduction of kappa(l) compared to zone melted ingot, while the charge carriers remain relatively mobile across the liquid-fused grains. This porous material displays a zT value of 1.2, which is higher than fully dense conventional zone melted ingots and hot pressed (Bi,Sb)(2)Te-3 alloys. A segmented leg of melt-centrifuged Bi0.5Sb1.5Te3 and Bi0.3Sb1.7Te3 could produce a high device ZT exceeding 1.0 over the whole temperature range of 323-523 K and an efficiency up to 9%. The present work demonstrates a method for synthesizing high-efficiency porous thermoelectric materials through an unconventional melt-centrifugation technique.
Design of N‐Type Textured Bi2Te3 with Robust Mechanical Properties for Thermoelectric Micro‐Refrigeration Application

Yu‐Ke Zhu,Yifan Jin,Jianbo Zhu,Xingyan Dong,Ming Liu,Yuxin Sun,Muchun Guo,Fushan Li,Fengkai Guo,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.1002/advs.202206395

IF: 15.1

2022-12-31

Advanced Science

Abstract:Commonly used methods for increasing the preferred orientation of n‐type Bi2Te3 include liquid phase hot deformation (LPHD) and traditional hot forging (HF). This work, as an insightful understanding of the HF method, discloses the intrinsic mechanisms of both superior thermoelectric and robust mechanical properties, aiming to shed light on texture engineering utilized for viable micro‐refrigeration applications. Thermoelectric refrigeration is one of the mature techniques used for cooling applications, with the great advantage of miniaturization over traditional compression refrigeration. Due to the anisotropic thermoelectric properties of n‐type bismuth telluride (Bi2Te3) alloys, these two common methods, including the liquid phase hot deformation (LPHD) and traditional hot forging (HF) methods, are of considerable importance for texture engineering to enhance performance. However, their effects on thermoelectric and mechanical properties are still controversial and not clear yet. Moreover, there has been little documentation of mechanical properties related to micro‐refrigeration applications. In this work, the above‐mentioned methods are separately employed to control the macroscopic grain orientation for bulk n‐type Bi2Te3 samples. The HF method enabled the stabilization of both composition and carrier concentration, therefore yielding a higher quality factor to compare with that of LPHD samples, supported by DFT calculations. In addition to superior thermoelectric performance, the HF sample also exhibited robust mechanical properties due to the presence of nano‐scale distortion and dense dislocation, which is the prerequisite for realizing ultra‐precision machining. This work helps to pave the way for the utilization of n‐type Bi2Te3 for commercial micro‐refrigeration applications.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3 ‐Based Thin Films

Ming Tan,Xiao‐Lei Shi,Wei‐Di Liu,Meng Li,Yaling Wang,Hui Li,Yuan Deng,Zhi‐Gang Chen

DOI: https://doi.org/10.1002/aenm.202102578

IF: 27.8

2021-09-15

Advanced Energy Materials

Abstract:Bi2Te3-based thin films are attracting increasing attention due to their considerable wearability and flexibility feature. However, the relatively low performance compared to their bulk counterparts limits their development and wider application. In this work, synergistic texturing and Bi/Sb-Te antisite doping are used to achieve a high room-temperature ZT of ≈1.5 in p-type Bi0.5Sb1.5Te3 thin films by a magnetron sputtering method. Structural characterization confirms that carefully tuning the deposition temperature can strengthen the texture of as-prepared polycrystalline Bi0.5Sb1.5Te3 thin films, leading to significantly enhanced carrier mobility and electrical conductivity. Simultaneously, rational engineering of the deposition temperature can induce antisite doping between Bi/Sb and Te, which can reduce the carrier concentration and make it closer to the optimized level. In turn, a high power factor of 45.3 µW cm−1 K−2 and a maximized ZT of ≈1.5 at room temperature are obtained. This high power factor and ZT are highly competitive to other state-of-the-art p-type thin-film-based thermoelectric materials, showing great potentials for practical applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Enhancing the Thermoelectric and Mechanical Properties of Bi 0.5 Sb 1.5 Te 3 Modulated by the Texture and Dense Dislocation Networks

Junhao Qiu,Tingting Luo,Yonggao Yan,Fanjie Xia,Lei Yao,Xiaoming Tan,Dongwang Yang,Gangjian Tan,Xianli Su,Jinsong Wu,Xinfeng Tang

DOI: https://doi.org/10.1021/acsami.1c19172

2021-12-02

Abstract:Bi2Te3-based materials are dominating thermoelectrics for almost all of the room-temperature applications. To meet the future demands, both their thermoelectric (TE) and mechanical properties need to be further improved, which are the requisite for efficient TE modules applied in areas such as reliable micro-cooling. The conventional zone melting (ZM) and powder metallurgy (PM) methods fall short in preparing Bi2Te3-based alloys, which have both a highly textured structure for high TE properties and a fine-grained microstructure for high mechanical properties. Herein, a mechanical exfoliation combined with spark plasma sintering (ME-SPS) method is developed to prepare Bi0.5Sb1.5Te3 with highly improved mechanical properties (correlated mainly to the dislocation networks), as well as significantly improved thermoelectric properties (correlated mainly to the texture structure). In the method, both the dislocation density and the orientation factor (F) can be tuned by the sintering pressure. At a sintering pressure of 20 MPa, an exceptional F of up to 0.8 is retained, leading to an excellent power factor of 4.8 mW m-1 K-2 that is much higher than that of the PM polycrystalline. Meanwhile, the method can readily induce high-density dislocations (up to ∼1010 cm-2), improving the mechanical properties and reducing the lattice thermal conductivity as compared to the ZM ingot. In the exfoliated and then sintered (20 MPa) sample, the figure-of-merit ZT = 1.2 (at 350 K), which has increased by about ∼20%, and the compressive strength has also increased by ∼20%, compared to those of the ZM ingot, respectively. These results demonstrate that the ME-SPS method is highly effective in preparing high-performance Bi2Te3-based alloys, which are critical for TE modules in commercial applications at near-room temperature.

materials science, multidisciplinary,nanoscience & nanotechnology
In situ crystal-amorphous compositing inducing ultrahigh thermoelectric performance of p-type Bi0.5Sb1.5Te3 hybrid thin films

Ming Tan,Wei-Di Liu,Xiao-Lei Shi,Jin Shang,Hui Li,Xiaobiao Liu,Liangzhi Kou,Matthew Dargusch,Yuan Deng,Zhi-Gang Chen

DOI: https://doi.org/10.1016/j.nanoen.2020.105379

IF: 17.6

2020-12-01

Nano Energy

Abstract:Flexible Bi0.5Sb1.5Te3-based thermoelectric thin films are promising p-type candidates for applications in flexible and wearable electronics. Here, we use thermal evaporation deposition and subsequent post-annealing treatment to prepare Bi0.5Sb1.5Te3 crystal-amorphous hybrid thin films. Tuning the annealing temperature can achieve an optimized hybrid level between amorphous and crystalline Bi0.5Sb1.5Te3, leading to an optimized figure of merit as high as ~1.5 at room temperature, which is an ultrahigh value in the p-type Bi0.5Sb1.5Te3 thin films. Our single parabolic band model and Density-Functional Theory calculation results indicate that such a high value should be attributed to the high effective mass induced by the proper crystal-amorphous hybrid structure. Our study indicates that a crystal-amorphous compositing can be used as a new methodology to achieve ultrahigh performance in thermoelectric materials.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Suppressing the donor-like effect via fast extrusion engineering for high thermoelectric performance of polycrystalline Bi2Te2.79Se0.21

Xusheng Liu,Tong Xing,Pengfei Qiu,Tingting Deng,Peng Li,Xuewen Li,Xiaoya Li,Xun Shi

DOI: https://doi.org/10.1016/j.jmat.2022.09.017

IF: 8.589

2023-03-01

Journal of Materiomics

Abstract:Bi2Te3-based alloys are the most mature commercial thermoelectric (TE) materials for the cooling application near room temperature. However, the poor mechanical properties of the commercial zone melting (ZM) ingot severely limits the further application. Meanwhile, due to the donor-like effect, the robust polycrystalline n-type bulks usually have low TE performance near room temperature. Herein, based on the commercial ZM ingots, a high figure of merit (zT) of 1.0 at 320 K and good mechanical properties are achieved via the hot extrusion. The dynamic recrystallization in the hot-extrusion process can suppress the donor-like effect and refine the large ZM grains into fine-equiaxed grains. Moreover, the obtained polycrystalline Bi2Te2.79Se0.21 has good preferential orientation and high carrier mobility (μ). The high μ and the weaken donor-like effect maintain the high power factor (PF) of 43.1 μW cm−1 K−2 in the hot-extruded ZM sample. Due to the enhanced phonon scattering, the total thermal conductivity κtot decreased to 1.35 W·m−1·K−1. To demonstrate the good mechanical properties of the extruded ZM sample, micro TE dices with the cross sections of 300 μm × 300 μm and 200 μm × 200 μm are successfully cut from the extrusion sample. This study provided a fast and low-cost extrusion technique to improve the TE and mechanical properties of the commercial ZM ingot at room temperature.

materials science, multidisciplinary,chemistry, physical,physics, applied
Synergistically enhanced thermoelectric and mechanical performance of Bi 2 Te 3 via industrial scalable hot extrusion method for cooling and power generation applications

Tianbo Lu,Boyi Wang,Guodong Li,Jiawei Yang,Xiaofan Zhang,Nan Chen,Te-Huan Liu,Ronggui Yang,Pingjuan Niu,Zongxiang Kan,Hangtian Zhu,Huaizhou Zhao

DOI: https://doi.org/10.1016/j.mtphys.2023.101035

IF: 11.021

2023-03-04

Materials Today Physics

Abstract:To meet the fast-expanding needs of thermoelectric cooling for high heat flux systems, high-performance thermoelectric devices must be constructed with materials possessing both high thermoelectric properties and mechanical strength. However, the synergistic improvement of thermoelectric and mechanical properties is challenging because of the anisotropic thermal and electrical transports in the layered Van der Waals structure of Bi 2 Te 3 , particularly for n-type Bi 2 (Te x Se 1-x ) 3 material. The hot extrusion (HE) technique was believed as the most efficient approach to decoupling the thermoelectric and mechanical properties of Bi 2 Te 3 . However, the mechanism and performance of Bi 2 Te 3 materials prepared by the HE method have been elusive. In this work, we developed an industrial-scalable HE technique to manipulate the texture ordering in Bi 2 Te 3 material, achieving simultaneous improvement of thermoelectric and mechanical properties. Compared to SPS samples, our HE samples not only show 19% enhancement of the peak ZT , but also exhibit record high compressive strength of 205 MPa and flexural strength of 79 MPa, respectively. Furthermore, 7-pairs thermoelectric modules were fabricated to verify the cooling and power generation performance. A maximum temperature difference of 72 K ( T h = 300 K) compared to 68 K for commercial devices and a maximum conversion efficiency of 5% at T h ≤500 K were realized.

materials science, multidisciplinary,physics, applied
Modulation of Vacancy Defects and Texture for High Performance n‐Type Bi2Te3 via High Energy Refinement

Jing Zhou,Jianghe Feng,Hao Li,Duo Liu,Guojuan Qiu,Feng Qiu,Juan Li,Zhong‐Zhen Luo,Zhigang Zou,Rong Sun,Ruiheng Liu

DOI: https://doi.org/10.1002/smll.202300654

IF: 13.3

2023-03-16

Small

Abstract:Grain refinement strongly strengthens the non‐basal slip of Bi2Te3‐based thermoelectric material, and then increase the carrier concentration, hindering the practical preparation of n‐type Bi2Te3 by ball milling method. In this work, enhancing the ball milling energy can facilitate the recovery effect during hot pressing, which can reduce and stabilize the carrier concentration and achieve high thermoelectric and mechanical performances. The carrier concentration in n‐type layered Bi2Te3‐based thermoelectric (TE) material is significantly impacted by the donor‐like effect, which would be further intensified by the nonbasal slip during grain refinement of crushing, milling, and deformation, inducing a big challenge to improve its TE performance and mechanical property simultaneously. In this work, high‐energy refinement and hot‐pressing are used to stabilize the carrier concentration due to the facilitated recovery of cation and anion vacancies. Based on this, combined with SbI3 doping and hot deformation, the optimized carrier concentration and high texture degree are simultaneously realized. As a result, a peak figure of merit (zT) of 1.14 at 323 K for Bi2Te2.7Se0.3 + 0.05 wt.% SbI3 sample with the high bending strength of 100 Mpa is obtained. Furthermore, a 31‐couple thermoelectric cooling device consisted of n‐type Bi2Te2.7Se0.3 + 0.05 wt.% SbI3 and commercial p‐type Bi0.5Sb1.5Te3 legs is fabricated, which generates the large maximum temperature difference (ΔTmax) of 85 K at a hot‐side temperature of 343 K. Thus, the discovery of recovery effect in high energy refinement and hot‐pressing has significant implications for improving TE performance and mechanical strength of n‐type Bi2Te3, thereby promoting its applications in harsh conditions.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Gibbs Adsorption and Zener Pinning Enable Mechanically Robust High‐Performance Bi2Te3‐Based Thermoelectric Devices

Chaohua Zhang,Qiangwen Lai,Wu Wang,Xuyang Zhou,Kailiang Lan,Lipeng Hu,Bowen Cai,Matthias Wuttig,Jiaqing He,Fusheng Liu,Yuan Yu

DOI: https://doi.org/10.1002/advs.202302688

IF: 15.1

2023-06-30

Advanced Science

Abstract:Gibbs adsorption and Zener pinning induced by MgB2 decomposition are proven to inhibit grain growth for enhancing mechanical properties and cutting processibility of Bi2Te3‐based alloys with improved thermoelectric performance. An average figure of merit of 1.1 within 300–473 K can be obtained in (Bi0.4Sb1.6Te3)0.97(MgB2)0.03, and an energy conversion efficiency of 4.2% at a temperature difference of 215 K can be achieved in an eight‐pair device. Bi2Te3‐based alloys have great market demand in miniaturized thermoelectric (TE) devices for solid‐state refrigeration and power generation. However, their poor mechanical properties increase the fabrication cost and decrease the service durability. Here, this work reports on strengthened mechanical robustness in Bi2Te3‐based alloys due to thermodynamic Gibbs adsorption and kinetic Zener pinning at grain boundaries enabled by MgB2 decomposition. These effects result in much‐refined grain size and twofold enhancement of the compressive strength and Vickers hardness in (Bi0.5Sb1.5Te3)0.97(MgB2)0.03 compared with that of traditional powder‐metallurgy‐derived Bi0.5Sb1.5Te3. High mechanical properties enable excellent cutting machinability in the MgB2‐added samples, showing no missing corners or cracks. Moreover, adding MgB2 facilitates the simultaneous optimization of electron and phonon transport for enhancing the TE figure of merit (ZT). By further optimizing the Bi/Sb ratio, the sample (Bi0.4Sb1.6Te3)0.97(MgB2)0.03 shows a maximum ZT of ≈1.3 at 350 K and an average ZT of 1.1 within 300–473 K. As a consequence, robust TE devices with an energy conversion efficiency of 4.2% at a temperature difference of 215 K are fabricated. This work paves a new way for enhancing the machinability and durability of TE materials, which is especially promising for miniature devices.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Cold-Sintered Bi 2 Te 3 -Based Materials for Engineering Nanograined Thermoelectrics

Bo Zhu,Xiaolong Su,Shengcheng Shu,Yubo Luo,Xian Yi Tan,Jichang Sun,Du Sun,Hao Zhang,Qiang Zhang,Ady Suwardi,Yun Zheng

DOI: https://doi.org/10.1021/acsaem.1c03540

IF: 6.4

2022-01-31

ACS Applied Energy Materials

Abstract:Bi2Te3-based compounds are currently the most commercially relevant thermoelectric materials near room temperature. They are prepared via hot pressing, hot deformation, spark plasma sintering, and other consolidation processes, which are typically performed at 400–500 °C. Such high-temperature processes are energy-intensive and generate unnecessary waste heat, making them undesirable for a large-scale production. In this study, a low-temperature liquid-phase-assisted sintering (or so-called cold-sintering) process was employed to fabricate p-type Bi0.5Sb1.5Te3 bulk materials at temperatures below 150 °C. At the optimal sintering temperature (130 °C), a ZT value as high as 0.56 at 450 K can be achieved, competitive to that of a commercial Bi0.5Sb1.5Te3 ingot (ZT 0.8–1.0). The addition of a small amount of transient liquid facilitates grain reorientation and expedites a mass transfer process under axial compaction and liquid evaporation conditions, thus resulting in nearly fully densified Bi0.5Sb1.5Te3 pellet samples (>97% theoretical density). Furthermore, the low-temperature sintering process results in the reduction of grain size and promotes twin boundaries, resulting in a low lattice thermal conductivity of 0.57 W m–1 K–1 at 380 K due to phonon scattering. The strategy reported in this work can be used not only as a substitute for high-temperature sintering of other thermoelectric materials but also to engineer phonon scattering for high-performance thermoelectrics.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaem.1c03540.Single parabolic band model and calculated transport properties; EBSD analysis for pellet sintered at 110 °C; BSE, EDS mapping, and TEM images of pellet sintered at 130 °C; average ZT values; and XPS results (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,energy & fuels
High-performance near-room-temperature n-type Bi2Te3-based thermoelectric alloys with superior mechanical properties

Jiaying Liu,Feng Liu,Yuzheng Li,Boyang Ying,Yongqing Wu,Zefeng Tang,Yiqi Cao,Tiejun Zhu,Chenguang Fu

DOI: https://doi.org/10.1007/s40843-024-3058-7

2024-09-22

Science China Materials

Abstract:Hot deformation is an important technique for fabricating high-strength n-type Bi 2 Te 3 -based thermoelectric (TE) alloys. However, the poor controllability of the oxygen-induced donor-like effect during the fabrication process often results in an overhigh carrier concentration, significantly worsening the near-room-temperature TE performance. Here, by maximumly avoiding the oxygen-induced donor-like effect, the carrier concentration of n-type TeI 4 -doped Bi 2 Te 2.7 Se 0.3 can maintain nearly the optimal one during the repetitive hot deformation processes while the enhanced texture contributes to higher carrier mobility. Moreover, the hot deformation-induced dislocations and local distortions are conducive to lowering the phonon transport. Consequently, a high zT of 1.0 and a large bending strength of 122 MPa are simultaneously achieved at 300 K. Additionally, a 23-pair TE cooling module of 8.20 × 6.10 × 1.65 mm 3 was fabricated, which shows a maximum temperature difference of 82 K at the hot-end temperature of 350 K. These results highlight the crucial role of controlling the oxygen-induced donor-like effect in achieving high-performance near-room-temperature n-type Bi 2 Te 3 -based TE alloys.

materials science, multidisciplinary
Directional Thermal Diffusion Realizing Inorganic Sb2Te3/Te Hybrid Thin Films with High Thermoelectric Performance and Flexibility

Meng Wei,Xiao‐Lei Shi,Zhuang‐Hao Zheng,Fu Li,Wei‐Di Liu,Li‐Ping Xiang,Yang‐Su Xie,Yue‐Xing Chen,Jing‐Yi Duan,Hong‐Li Ma,Guang‐Xing Liang,Xiang‐Hua Zhang,Ping Fan,Zhi‐Gang Chen

DOI: https://doi.org/10.1002/adfm.202207903

IF: 19

2022-09-02

Advanced Functional Materials

Abstract:A high ZT of ≈1 at 453 K is achieved in an inorganic Sb2Te3/Te hybrid thin film via a novel directional thermal diffusion reaction growth method with extraordinary flexibility, and the rationally designed flexible device shows a high power density by a low‐temperature difference. Inorganic films possess much higher thermoelectric performance than their organic counterparts, but their poor flexibilities limit their practical applications. Here, Sb2Te3/Tex hybrid thin films with high thermoelectric performance and flexibility, fabricated via a novel directional thermal diffusion reaction growth method are reported. The directional thermal diffusion enables rationally tuning the Te content in Sb2Te3, which optimizes the carrier density and leads to a significantly enhanced power factor of >20 μW cm–1 K–2, confirmed by both first‐principles calculations and experiments; while dense boundaries between Te and Sb2Te3 nanophases, contribute to the low thermal conductivity of ≈0.86 W m–1 K–1, both induce a high ZT of ≈1 in (Sb2Te3)(Te)1.5 at 453 K, ranking as the top value among the reported flexible films. Besides, thin films also exhibit extraordinary flexibility. A rationally designed flexible device composed of (Sb2Te3)(Te)1.5 thin films as p‐type legs and Bi2Te3 thin films as n‐type legs shows a high power density of >280 μW cm–2 at a temperature difference of 20 K, indicating a great potential for sustainably charging low‐power electronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Über Einige Physikalische Vorgänge bei der Auslösung von Genmutationen Durch Strahlung. II

P. Jordan,K. G. Zimmer,N. Timoféeff-ressovsky

DOI: https://doi.org/10.1007/BF00308400

1948-03-01

Zeitschrift für Induktive Abstammungs- und Vererbungslehre

Abstract:
RELATIONSHIPS BETWEEN TGF-β 1 , MYOSTATIN , AND DECORIN : IMPLICATIONS FOR SKELETAL MUSCLE FIBROSIS

Jinhong Zhu,Yong Li,W. Shen,C. Qiao,F. Ambrosio,M. Lavasani,M. Nozaki,M. Branca,J. Huard

Abstract:Recent studies have shown that myostatin, first identified as a negative regulator of skeletal muscle growth, may also be involved in the formation of fibrosis within skeletal muscle. In this study, we further explored the potential role of myostatin in skeletal muscle fibrosis, as well as its interaction with both transforming growth factor-beta1 and decorin. We discovered that myostatin stimulated fibroblast proliferation in vitro and induced its differentiation into myofibroblasts. We further found that transforming growth factor-beta1 stimulated myostatin expression, and conversely, myostatin stimulated transforming growth factor-beta1 secretion in C2C12 myoblasts. Decorin, a small leucine-rich proteoglycan, was found to neutralize the effects of myostatin in both fibroblasts and myoblasts. Moreover, decorin up-regulated the expression of follistatin, an antagonist of myostatin. The results of in vivo experiments showed that myostatin-knockout mice developed significantly less fibrosis and displayed better skeletal muscle regeneration when compared to wild-type mice at 2 and 4 weeks following gastrocnemius muscle laceration injury. In wild-type mice, we found that transforming growth factor-beta1 and myostatin co-localize in myofibers in the early stages of injury. Recombinant myostatin protein stimulated myofibers to express transforming growth factor-beta1 in skeletal muscles at early timepoints following injection. In summary, these findings define a fibrogenic property of myostatin, and suggest the existence of coregulatory relationships between transforming growth factor-beta1, myostatin, and decorin.
Identifying the Manipulation of Individual Atomic-Scale Defects for Boosting Thermoelectric Performances in Artificially Controlled Bi 2 Te 3 Films

Min Zhang,Wei Liu,Cheng Zhang,Sen Xie,Zhi Li,Fuqiang Hua,Jiangfan Luo,Zhaohui Wang,Wei Wang,Fan Yan,Yu Cao,Yong Liu,Ziyu Wang,Ctirad Uher,Xinfeng Tang

DOI: https://doi.org/10.1021/acsnano.1c01039

IF: 17.1

2021-03-08

ACS Nano

Abstract:The manipulation of individual intrinsic point defects is crucial for boosting the thermoelectric performances of n-Bi2Te3-based thermoelectric films, but was not achieved in previous studies. In this work, we realize the independent manipulation of Te vacancies VTe and antisite defects of TeBi and BiTe in molecular beam epitaxially grown n-Bi2Te3 films, which is directly monitored by a scanning tunneling microscope. By virtue of introducing dominant TeBi antisites, the n-Bi2Te3 film can achieve the state-of-the-art thermoelectric power factor of 5.05 mW m–1 K–2, significantly superior to films containing VTe and BiTe as dominant defects. Angle-resolved photoemission spectroscopy and systematic transport studies have revealed two detrimental effects regarding VTe and BiTe, which have not been discovered before: (1) The presence of BiTe antisites leads to a reduction of the carrier effective mass in the conduction band; and (2) the intrinsic transformation of VTe to BiTe during the film growth results in a built-in electric field along the film thickness direction and thus is not beneficial for the carrier mobility. This research is instructive for further engineering defects and optimizing electronic transport properties of n-Bi2Te3 and other technologically important thermoelectric materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c01039?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c01039</a>.Additional RHEED patterns, XRD patterns, ARPES spectra, and electronic transport properties of Bi2Te3 films grown at different substrate temperatures Tsub and Te/Bi flux ratios R, atomic resolution STM topographies of intrinsic point defects in Bi2Te3, and additional STM images as well as the statistical analysis of the density of surface point defects (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c01039/suppl_file/nn1c01039_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Surfactant-free Synthesis of Bi2Te3-Te Micro-Nano Heterostructure with Enhanced Thermoelectric Figure of Merit.

Yichi Zhang,Heng Wang,Stephan Kraeemer,Yifeng Shi,Fan Zhang,Matt Snedaker,Kunlun Ding,Martin Moskovits,G. Jeffrey Snyder,Galen D. Stuck

DOI: https://doi.org/10.1021/nn2002294

IF: 17.1

2011-01-01

ACS Nano

Abstract:An ideal thermoelectric material would be a semiconductor with high electrical conductivity and relatively low thermal conductivity: an "electron crystal, phonon glass". Introducing nanoscale heterostructures into the bulk TE matrix is one way of achieving this intuitively anomalous electron/phonon transport behavior. The heterostructured interfaces are expected to play a significant role in phonon scattering to reduce thermal conductivity and in the energy-dependent scattering of electrical carriers to improve the Seebeck coefficient. A nanoparticle building block assembly approach is plausible to fabricate three-dimensional heterostructured materials on a bulk commercial scale. However, a key problem in applying this strategy is the possible negative impact on TE performance of organic residue from the nanoparticle capping ligands. Herein, we report a wet chemical, surfactant-free, low-temperature, and easily up-scalable strategy for the synthesis of nanoscale heterophase Bi(2)Te(3)-Te via a galvanic replacement reaction. The micro-nano heterostructured material is fabricated bottom-up, by mixing the heterophase with commercial Bi(2)Te(3). This unique structure shows an enhanced zT value of ∼0.4 at room temperature. This heterostructure has one of the highest figures of merit among bismuth telluride systems yet achieved by a wet chemical bottom-up assembly. In addition, it shows a 40% enhancement of the figure of merit over our lab-made material without nanoscale heterostructures. This enhancement is mainly due to the decrease in the thermal conductivity while maintaining the power factor. Overall, this cost-efficient and room-temperature synthesis methodology provides the potential for further improvement and large-scale thermoelectric applications.
Tailoring Nanoporous Structures in Bi2Te3 Thin Films for Improved Thermoelectric Performance

Jixiang Qiao,Yang Zhao,Qun Jin,Jun Tan,Siqing Kang,Jianhang Qiu,Kaiping Tai

DOI: https://doi.org/10.1021/acsami.9b13920

2019-10-16

Abstract:Thin-film thermoelectrics (TEs) with unique advantages have triggered great interest in thermal management and energy harvesting technology for ambient temperature microscale systems. Although they have exhibited a good prospect, their unsatisfactory performances still seriously hamper their widespread application. Tailoring the porous structure has been demonstrated to be a facile strategy to significantly reduce thermal conductivity and enhance the figure of merit (ZT) of bulk TE materials; however, it is challenging for thin-film TEs. Here, the nanoporous Bi2Te3 thin films with faceted pore shapes and various porosities, pore sizes, and pore intervals are carefully designed and fabricated by evacuating the over-stoichiometry Te atoms. The dependence of the carrier mobility and lattice thermal conductivity on the pore characteristics is investigated. In the case of the pore interval longer than the electron mean free path, the porous structure greatly reduces the lattice thermal conductivity without affecting the electrical conductivity obviously. Phonon specular backscattering that is highly related to the pore characteristics is suggested to be mainly responsible for thermal conductivity reduction, resulting in ∼60% enhancement in ZT at room temperature, that is, from ∼0.42 for the dense film to ∼0.67 for the nanoporous film. The enhanced ZT value is comparable to that of commercial bulk TEs and can be further improved by optimizing the carrier concentrations. This work provides a general approach to fabricate high-performance chalcogenide TE thin-film materials.
Synergistic Tailoring of Electronic and Thermal Transports in Thermoelectric Se-Free n-Type (Bi,Sb)2Te3

Soo-Ho Jung,Seungki Jo,Kyung Song,Eun Ae Choi,Jinhee Bae,Jong Min Park,Seong-Mee Hwang,Jeong-Yun Sun,Hyun-Sik Kim,Kyung Tae Kim

DOI: https://doi.org/10.1021/acsami.4c06978

2024-07-31

Abstract:Se-free n-type (Bi,Sb)2Te3 thermoelectric materials, outperforming traditional n-type Bi2(Te,Se)3, emerge as a compelling candidate for practical applications of recovering low-grade waste heat. A 100% improvement in the maximum ZT of n-type Bi1.7Sb0.3Te3 is demonstrated by using melt-spinning and excess Te-assisted transient liquid phase sintering (LPS). Te-rich sintering promotes the formation of intrinsic defects (TeBi), elevating the carrier concentration and enhancing the electrical conductivity. Melt-spinning with excess Te fine-tunes the electronic band, resulting in a high power-factor of 0.35 × 10-3 W·m-1 K-2 at 300 K. Rapid volume change during sintering induces the formation of dislocation networks, significantly suppressing the lattice thermal conductivity (0.4 W·m-1 K-1). The developed n-type legs achieve a high maximum ZT of 1.0 at 450 K resulting in a 70% improvement in the output power of the thermoelectric device (7.7 W at a temperature difference of 250 K). This work highlights the synergy between melt-spinning and transient LPS, advancing the tailored control of both electronic and thermal properties in thermoelectric technology.

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Microstructure and thermoelectric properties of porous Bi 2 Te 2.85 Se 0.15 bulk materials fabricated by semisolid powder processing

Enhanced electrical and mechanical properties of Bi2Te3-based thermoelectric thick films enabled by a practical dynamic regulation strategy

Melt-Centrifuged (bi,sb)2 Te3 : Engineering Microstructure Toward High Thermoelectric Efficiency.

Design of N‐Type Textured Bi2Te3 with Robust Mechanical Properties for Thermoelectric Micro‐Refrigeration Application

Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3 ‐Based Thin Films

Enhancing the Thermoelectric and Mechanical Properties of Bi 0.5 Sb 1.5 Te 3 Modulated by the Texture and Dense Dislocation Networks

In situ crystal-amorphous compositing inducing ultrahigh thermoelectric performance of p-type Bi0.5Sb1.5Te3 hybrid thin films

Suppressing the donor-like effect via fast extrusion engineering for high thermoelectric performance of polycrystalline Bi2Te2.79Se0.21

Synergistically enhanced thermoelectric and mechanical performance of Bi 2 Te 3 via industrial scalable hot extrusion method for cooling and power generation applications

Modulation of Vacancy Defects and Texture for High Performance n‐Type Bi2Te3 via High Energy Refinement

Gibbs Adsorption and Zener Pinning Enable Mechanically Robust High‐Performance Bi2Te3‐Based Thermoelectric Devices

Cold-Sintered Bi 2 Te 3 -Based Materials for Engineering Nanograined Thermoelectrics

High-performance near-room-temperature n-type Bi2Te3-based thermoelectric alloys with superior mechanical properties

Directional Thermal Diffusion Realizing Inorganic Sb2Te3/Te Hybrid Thin Films with High Thermoelectric Performance and Flexibility

Über Einige Physikalische Vorgänge bei der Auslösung von Genmutationen Durch Strahlung. II

RELATIONSHIPS BETWEEN TGF-β 1 , MYOSTATIN , AND DECORIN : IMPLICATIONS FOR SKELETAL MUSCLE FIBROSIS

Identifying the Manipulation of Individual Atomic-Scale Defects for Boosting Thermoelectric Performances in Artificially Controlled Bi 2 Te 3 Films

Surfactant-free Synthesis of Bi2Te3-Te Micro-Nano Heterostructure with Enhanced Thermoelectric Figure of Merit.

Tailoring Nanoporous Structures in Bi2Te3 Thin Films for Improved Thermoelectric Performance

Synergistic Tailoring of Electronic and Thermal Transports in Thermoelectric Se-Free n-Type (Bi,Sb)2Te3