Melt-Centrifuged (bi,sb)2 Te3 : Engineering Microstructure Toward High Thermoelectric Efficiency.

Yu Pan,Umut Aydemir,Jann A. Grovogui,Ian T. Witting,Riley Hanus,Yaobin Xu,Jinsong Wu,Chao-Feng Wu,Fu-Hua Sun,Hua-Lu Zhuang,Jin-Feng Dong,Jing-Feng Li,Vinayak P. Dravid,G. Jeffrey Snyder
DOI: https://doi.org/10.1002/adma.201802016
IF: 29.4
2018-01-01
Advanced Materials
Abstract:Microstructure engineering is an effective strategy to reduce lattice thermal conductivity (kappa(l)) and enhance the thermoelectric figure of merit (zT). Through a new process based on melt-centrifugation to squeeze out excess eutectic liquid, microstructure modulation is realized to manipulate the formation of dislocations and clean grain boundaries, resulting in a porous network with a platelet structure. In this way, phonon transport is strongly disrupted by a combination of porosity, pore surfaces/junctions, grain boundaries, and lattice dislocations. These collectively result in a approximate to 60% reduction of kappa(l) compared to zone melted ingot, while the charge carriers remain relatively mobile across the liquid-fused grains. This porous material displays a zT value of 1.2, which is higher than fully dense conventional zone melted ingots and hot pressed (Bi,Sb)(2)Te-3 alloys. A segmented leg of melt-centrifuged Bi0.5Sb1.5Te3 and Bi0.3Sb1.7Te3 could produce a high device ZT exceeding 1.0 over the whole temperature range of 323-523 K and an efficiency up to 9%. The present work demonstrates a method for synthesizing high-efficiency porous thermoelectric materials through an unconventional melt-centrifugation technique.
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