Abstract:Silicene, a silicon analogue of graphene, has attracted increasing attention during the past few years. As early as in 1994, the possibility of stage corrugation in the Si analogs of graphite had already been theoretically explored. But there were very few studies on silicene until 2009, when silicene with a low buckled structure was confirmed to be dynamically stable by ab initio calculations. In spite of the low buckled geometry, silicene shares most of the outstanding electronic properties of planar graphene (e.g., the "Dirac cone", high Fermi velocity and carrier mobility). Compared with graphene, silicene has several prominent advantages: (1) a much stronger spin-orbit coupling, which may lead to a realization of quantum spin Hall effect in the experimentally accessible temperature, (2) a better tunability of the band gap, which is necessary for an effective field effect transistor (FET) operating at room temperature, (3) an easier valley polarization and more suitability for valleytronics study. From 2012, monolayer silicene sheets of different superstructures were successfully synthesized on various substrates, including Ag(111), Ir(1 1 I), ZrB2(0001), ZrC(111) and MoS2 surfaces. Multilayer silicene sheets have also been grown on Ag(1 1 1) surface. The experimental successes have stimulated many efforts to explore the intrinsic properties as well as potential device applications of silicene, including quantum spin Hall effect, quantum anomalous Hall effect, quantum valley Hall effect, superconductivity, band engineering, magnetism, thermoelectric effect, gas sensor, tunneling FET, spin filter, and spin FET, etc. Recently, a silicene FET has been fabricated, which shows the expected ambipolar Dirac charge transport and paves the way towards silicene-based nanoelectronics. This comprehensive review covers all the important theoretical and experimental advances on silicene to date, from the basic theory of intrinsic properties, experimental synthesis and characterization, modulation of physical properties by modifications, and finally to device explorations. (C) 2016 Elsevier Ltd. All rights reserved.

Transport properties and thermoelectric effects in gated silicene superlattices

Electronic and thermoelectric properties of atomically thin C<sub>3</sub>Si<sub>3</sub>/C and C<sub>3</sub>Ge<sub>3</sub>/C superlattices.

Thermoelectric properties of atomic-thin silicene and germanene nano-structures

First-principles and Molecular Dynamics Study of Thermoelectric Transport Properties of N-type Silicon-Based Superlattice-Nanocrystalline Heterostructures

Analytical study of the thermoelectric properties in silicene

External electric field driving the ultra-low thermal conductivity of silicene.

Thermoelectric Penta-Silicene with a High Room-Temperature Figure of Merit

Tight-binding model and ab initio calculation of silicene with strong spin-orbit coupling in low-energy limit

Theoretical Prediction of Enhanced Thermopower in n-doped Si/Ge Superlattices using Effective Mass Approximation

Rise of Silicene: A Competitive 2d Material

Electrical-gates-controlled giant tunneling magnetoresistance and its quasi-periodic oscillation in an interlaced magnetic-electric silicene superlattice

Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices

Effective Out‐Of‐Plane Thermal Conductivity of Silicene by Optothermal Raman Spectroscopy

Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model

Modulation of Electronic Properties with External Fields in Silicene-Based Nanostructures

Electron Delocalization in Gate-Tunable Gapless Silicene

Gated Silicene as a tunable source of nearly 100% spin-polarized electrons

Optimization of the tunneling magnetoresistance and spin-valley polarization in complex magnetic silicene structures

The Role of Electron-Phonon Interaction in Heavily Doped Fine-Grained Bulk Silicons As Thermoelectric Materials

Electric Field modulated electronic, thermoelectric and transport properties of 2Dtetragonal silicene and its nanoribbons

Thermoelectric Transport of the Half-Filled Lowest Landau Level in a P -Type Ge/SiGe Heterostructure