Analytical study of the thermoelectric properties in silicene
Amarnath R,K S Bhargavi,S S Kubakaddi
DOI: https://doi.org/10.1088/1402-4896/ad7414
2024-08-30
Physica Scripta
Abstract:Theoretically, we investigate the thermoelectric (TE) properties namely, electrical conductivity (σ), diffusion thermopower (Sd), power factor (PF), electronic thermal conductivity (κe) and thermoelectric figure of merit (ZT) for silicene on Al2O3 substrate. TE coefficients are obtained by solving the Boltzmann transport equationtaking account of the electron scatteringby all the relevant scattering mechanisms in silicene, namely charged impurity (CI), short-range disorder (SD), intra- and inter-valley acoustic (APs) and optical (OPs) phonons, and surface optical phonons (SOPs). The TE properties are numerically studied as a function of temperature T (2-400 K) and electron concentration ns(0.1-10 ×10^12 cm^-2). The calculated σ and S_d are found to be governed by CIs at low temperatures (T ~ 100 K. On the other hand, ns dependence shows that σ (Sd) increases (decreases) with increasing ns; with PF relatively constant at lower ns and then decreases with increasing ns. At room temperature, the calculated σ(Sd) in silicene is closer to that in graphene and about an order of magnitude greater(less) than that in monolayer (ML) MoS_2. The κ_e is found to be weakly depending on T and Wiedemann-Franz law is shown to be violated.We have predicted a maximum PF ~3.5 mW m^-1 K^-2, at 300 K for ns = 0.1×10^12 cm^-2 from which the estimated ZT= 0.11, taking a theoretically predicted lattice thermal conductivity κ_l = 9.4 Wm^-1 K^-1, is a maximum. This ZT is much greater than that of graphene and ML MoS_2. The ZT is found to decrease with the increasing n_s. The ZT values for other values of ns in silicene, at 300 K, also show much superiority over graphene, thus making silicene a preferred thermoelectric material because of its relatively large σ and very small κ_l.
physics, multidisciplinary