Abstract:Based on first principles calculations and self-consistent solution of the linearized Boltzmann-Peierls equation for phonon transport approach within a three-phonon scattering framework, we characterize lattice thermal conductivities k of freestanding silicene, germanene and stanene under different isotropic tensile strains and temperatures. We find a strong size dependence of k for silicene with tensile strain, i.e., divergent k with increasing system size; however, the intrinsic room temperature k for unstrained silicene converges with system size to 19.34 W m(-1) K(-1) at 178 nm. The room temperature k of strained silicene becomes as large as that of bulk silicon at 84 μm, indicating the possibility of using strain in silicene to manipulate k for thermal management. The relative contribution to the intrinsic k from out-of-plane acoustic modes is largest for unstrained silicene, ∼39% at room temperature. The single mode relaxation time approximation, which works reasonably well for bulk silicon, fails to appropriately describe phonon thermal transport in silicene, germanene and stanene within the temperature range considered. For large samples of silicene, k increases with tensile strain, peaks at ∼7% strain and then decreases with further strain. In germanene and stanene, increasing strain hardens and stabilizes long wavelength out-of-plane acoustic phonons, and leads to similar k behaviors to those of silicene. These findings further our understanding of phonon dynamics in group-IV buckled monolayers and may guide transfer and fabrication techniques for these freestanding samples and engineering of k by size and strain for applications of thermal management and thermoelectricity.

Tuning the Electronic Structure of Silicene and Germanene by Biaxial Strain and Electric Field

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

First-principles calculations of mechanical and electronic properties of silicene under strain

Modulation of Electronic Properties with External Fields in Silicene-Based Nanostructures

Influence of strain and electric field on the properties of silicane

The Effects Of Thermal And Electric Fields On The Electronic Structures Of Silicene

Tunable bandgap in silicene and germanene.

Strain and chirality effects on the mechanical and electronic properties of silicene and silicane under uniaxial tension

The effect of mechanical strains on the ferroelectric and dielectric properties of a model single crystal ? Phase field simulation

Electronic structures and optical properties of arsenene and antimonene under strain and an electric field

Tailoring Of The Structural, Energetic And Electronic Properties Of Silicene-Based Nanostructures

Anomalous strain effect on the thermal conductivity of low-buckled two-dimensional silicene

Strain Induced Spin-Splitting and Half-Metallicity in Antiferromagnetic Bilayer Silicene under Bending

Strain and electric field tuning the electronic properties of two-dimensional MoS2/ScCl3 van der Waals heterostructure

Dirac Points And Van Hove Singularities Of Silicene Under Uniaxial Strain

Strain Induced Phase Transitions in Silicene Bilayers: a First Principles and Tight-Binding Study

Investigation of Electron-Phonon Coupling in Epitaxial Silicene by In-situ Raman Spectroscopy

Strain-controlled Valley and Spin Separation in Silicene Heterojunctions

Tensile strains give rise to strong size effects for thermal conductivities of silicene, germanene and stanene

Tuning transport coefficients of monolayer $\mathrm{MoSi_2N_4}$ with biaxial strain

Electric Field modulated electronic, thermoelectric and transport properties of 2Dtetragonal silicene and its nanoribbons