Abstract:Pseudobinary alloys (GeTe) m (Sb 2 Te 3 ) n (GST), known as the most popular phase change materials for data-storage applications, also exhibit great potential as thermoelectric (TE) materials due to their intrinsically low lattice thermal conductivity (κ l ) and high electrical conductivity.Among the GST compounds, the Sb 2 Te 3 -rich Ge 1 Sb 6 Te 10 (m = 1 and n = 3) crystallizes into a complex trigonal structure with a 51-layer long period stacked along the c-axis, which may generate various possible atomic arrangements, thereby affecting the electronic and transport properties.Here, using ab initio calculations, we demonstrate that, besides the two experimentally known atomic sequences (GST-I and GST-III), Ge 1 Sb 6 Te 10 has two novel stable stacking configurations (GST-II and GST-IV).GST-IV exhibits semi-metallic behavior, whereas GST-I and GST-II are semiconductors.Both semiconducting stackings have low κ l of 0.86 and 0.78 Wm -1 K -1 at 300 K, owing to their small phonon group velocities and short phonon lifetimes.Moreover, they show a combination of high n-type Seebeck coefficient and electrical conductivity due to the steep slope of conduction band density of states near bandgap, multiple conduction pocket electrons, and multiband conduction.The maximum ZT values of 2.23 and 1.91 are achieved in n-type stackings GST-I and GST-II at 710 K. Our work sheds light on the great potential of Ge 1 Sb 6 Te 10 with different atomic stackings for TE applications and will stimulate further experimental study.More importantly, from the perspective of materials informatics, this study provides significant insights that crystal systems with multilayered structures may open a viable route for creating new functional materials.

Electronic and Thermal Properties of $\text{GeTe/Sb}_{2}\text{Te}_{3}$ Superlattices by ab-initio Approach: Impact of Van der Waals Gaps on Vertical Lattice Thermal Conductivity

Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films

Superlattice-like Sb-Ge Thin Films for High Thermal Stability and Low Power Phase Change Memory

Positive Dependence of Thermal Conductivity on Temperature in GeTe/Bi2Te3 Superlattices: the Contribution of Electronic and Particle Wave Lattice Thermal Conductivity

Metal-Insulator Transition of Ge-Sb-Te Superlattice: an Electron Counting Model Study

Topological Insulating In Gete/Sb2te3 Phase-Change Superlattice

Electronic and thermoelectric properties of atomically thin C<sub>3</sub>Si<sub>3</sub>/C and C<sub>3</sub>Ge<sub>3</sub>/C superlattices.

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Enhanced Thermoelectric Performance in Ge0.955- X Sbx Te/FeGe2 Composites Enabled by Hierarchical Defects.

High‐Stability Van Der Waals Structures of GeTe/Sb2Te3 Superlattices for 100× Increased Durability Phase‐Change Memory (PCM) by Low‐Temperature Atomic Layer Deposition

Study on the Work Function of GeTe/Sb2Te3 Superlattice-Like Films for Application of Phase Change Memory

Low Thermal Conductivity Phase Change Memory Superlattices

Lattice Thermal Conductivity of M GeTe • N Sb 2 Te 3 Phase-Change Materials : A First-Principles Study

Crystallization kinetics of nanoconfined GeTe slabs in GeTe/TiTe -like superlattices for phase change memories

Systematic Study on Electronic, Mechanical, and Thermal Transport Properties of Germanium Antimony Selenide Telluride Alloy by a First-Principles Approach

Phonon properties and low thermal conductivity of phase change material with superlattice-like structure

Prediction of the Atomic Structure and Thermoelectric Performance for Semiconducting Ge1Sb6Te10 from DFT Calculations

Thermal Conductivity of GaAs/Ge Nanostructures

Heat Conduction in Si/Ge Superlattices: A Molecular Dynamics Study

Manipulation of Dangling Bonds of Interfacial States Coupled in GeTe-rich GeTe/Sb2Te3 Superlattices