Abstract:Superlattice-like phase change memory (SL-PCM) promises lower switching current than conventional PCM based on Ge2Sb2Te5 (GST). However, a fundamental understanding of SL-PCM requires detailed characterization of the interfaces within such a SL. Here, we explore the electrical and thermal transport of SLs with deposited Sb2Te3 and GeTe alternating layers of various thicknesses. We find up to ~4X reduction of the effective cross-plane thermal conductivity of the SL stack (as-deposited polycrystalline) compared to polycrystalline GST (as-deposited amorphous and later annealed) due to the thermal interface resistances within the SL. Thermal measurements with varying periods of our SLs show a signature of phonon coherence with a transition from wave-like to particle-like phonon transport, further described by our modeling. Electrical resistivity measurements of such SLs reveal strong anisotropy (~2000X) between the in-plane and cross-plane directions due to the weakly interacting van der Waals gaps. This work uncovers electro-thermal transport in SLs based on Sb2Te3 and GeTe, for improved design of low-power PCM.

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: to gain an in - depth understanding of the electrical and thermal transport properties in phase - change memory materials based on Sb₂Te₃/GeTe superlattices (SL - PCM), especially how these properties are affected by internal interfaces. Specifically, the paper focuses on the following aspects: 1. **Reducing the switching current**: Traditional phase - change memory (PCM) is based on Ge₂Sb₂Te₅ (GST), while SL - PCM is expected to achieve a lower switching current density by optimizing the material structure, thereby improving performance. 2. **Understanding of interface effects**: Although previous studies have shown that SL - PCM has potential advantages, it is not clear how its internal interfaces affect electrical and thermal transport. In particular, compared with traditional PCM, the complex energy and charge transport mechanisms in SL - PCM need to be further explored. 3. **Anisotropy of thermal and electrical conductivity**: It has been found that there are significant differences in the thermal and electrical conductivity of SL - PCM in different directions (for example, the differences in - plane and parallel to the inter - layer). This anisotropy has an important impact on device design and performance. 4. **Phonon transport mechanism**: The paper also explores the transition from coherent wavelike transport to quasi - ballistic transport in Sb₂Te₃/GeTe films with different periods, which helps to understand the thermal conduction behavior in SL - PCM. ### Specific problem summary: - **Measurement and modeling of thermal conductivity**: Measure the thermal conductivity of Sb₂Te₃/GeTe superlattice films with different periods by time - domain thermoreflectance (TDTR) and fit them using the Simkin - Mahan model. - **Measurement of electrical conductivity**: Use the standard transmission line method (TLM) and the improved TLM to measure the electrical conductivity in - plane and in the vertical direction, revealing strong anisotropy. - **Evaluation of interface thermal resistance**: Quantify the interface thermal resistance between SL - PCM and TiN electrodes to evaluate its impact on device temperature rise. Through these studies, the authors hope to provide theoretical support and technical guidance for the design of low - power phase - change memories.

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