Abstract:Superlattice heterostructures consisting of alternating ultrathin layers of TiTe2 and prototypical phase‐change materials (PCMs), namely GeTe and Ge2Sb2Te5, are investigated by ab initio molecular dynamics. It is shown that the PCM layers can switch without structural disruption or atomic diffusion across TiTe2 nanolayers. The Ge2Sb2Te5 model, particularly, exhibits weak coupling during switching, along with high stability in its amorphous state, making it a strong candidate for neuromorphic applications. Neuromorphic devices constitute a novel approach to computing that takes inspiration from the brain to unify the processing and storage units. Memories based on phase‐change materials (PCMs) are potential candidates for such devices due to their non‐volatility and excellent scalability, however their use is hindered by their conductance variability and temporal drift in resistance. Recently, it has been shown that the utilization of phase‐change heterostructures consisting of nanolayers of the Sb2Te3 PCM interleaved with a transition‐metal dichalcogenide, acting as a confinement material, strongly mitigates these problems. In this work, superlattice heterostructures made of TiTe2 and two prototypical PCMs, respectively GeTe and Ge2Sb2Te5 are considered. By performing ab initio molecular dynamics simulations, it is shown that it is possible to switch the PCMs without destroying the superlattice structure and without diffusion of the atoms of the PCM across the TiTe2 nanolayers. In particular, the model containing Ge2Sb2Te5 shows weak coupling between the two materials during the switching process, which, combined with the high stability of the amorphous state of Ge2Sb2Te5, makes it a very promising candidate for neuromorphic computing applications.

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A Superlattice Interfacial Phase Change Material with Low Power Consumption

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Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films

Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb 2 Te 3 -GeTe superlattices

Energy Efficient Neuro-Inspired Phase-Change Memory Based on Ge4 Sb6 Te7 as a Novel Epitaxial Nanocomposite

Advanced interfacial phase change material: structurally confined and interfacially extended superlattice

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

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Ab Initio Study of Novel Phase‐Change Heterostructures

High‐Throughput Screening for Phase‐Change Memory Materials

Native Filament-to-dielectric Interfaces in Phase Change Superlattice Memories

Weyl Node Assisted Conductivity Switch in Interfacial Phase Change Memory with Van Der Waals Interfaces

Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays

Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb 2 Te 3

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Synthesis and characterization of phase change memory cells

In-memory Computing Based on Photonic-Electronic Hybrid Phase-Change Cells.

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films

Bonding Nature and Optical Contrast of TiTe_2/Sb_2Te_3 Phase-Change Heterostructure