Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

Superlattice-like Sb-Ge Thin Films for High Thermal Stability and Low Power Phase Change Memory

Low Thermal Conductivity Phase Change Memory Superlattices

Gete/Crsb2te Superlattice-Like Thin Film for Excellent Thermal Stability and High Phase Change Speed

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Reduction of write current with improved thermal stability in GeSe 2 doped Sb 2 Te 3 films for Phase Change Memory applications

Simultaneously low resistance drift and ultra‐fast phase change speed based on GeSb/Sb multi‐layer thin films

Improvement of the thermal efficiency of Ge2Sb2Te5-based device by ultrathin carbon nanolayers

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Crystallization behavior and electrical characteristics of Ga–Sb thin films for phase change memory

Atomic Layer Deposition of Sb2Te3/GeTe superlattice Film and Its Melt‐Quenching‐Free Phase Transition Mechanism for Phase‐Change Memory

Development of Sb phase change thin films with high thermal stability and low resistance drift by alloying with Se

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

Ga2te3 Phase Change Material For Low-Power Phase Change Memory Application

The Use of Ga16Sb84 Alloy for Electronic Phase-Change Memory

Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application

Room temperature-produced chalcogenide superlattices for interfacial phase-change memory

Elemental Redistribution During the Crystallization of Ge-Cu-Te Thin Films for Phase-Change Memory