Prediction of the Atomic Structure and Thermoelectric Performance for Semiconducting Ge1Sb6Te10 from DFT Calculations

Yu Gan,Jian Zhou,Zhimei Sun

DOI: https://doi.org/10.20517/jmi.2021.03

2021-01-01

Journal of Materials Informatics

Abstract:Pseudobinary alloys (GeTe) m (Sb 2 Te 3 ) n (GST), known as the most popular phase change materials for data-storage applications, also exhibit great potential as thermoelectric (TE) materials due to their intrinsically low lattice thermal conductivity (κ l ) and high electrical conductivity.Among the GST compounds, the Sb 2 Te 3 -rich Ge 1 Sb 6 Te 10 (m = 1 and n = 3) crystallizes into a complex trigonal structure with a 51-layer long period stacked along the c-axis, which may generate various possible atomic arrangements, thereby affecting the electronic and transport properties.Here, using ab initio calculations, we demonstrate that, besides the two experimentally known atomic sequences (GST-I and GST-III), Ge 1 Sb 6 Te 10 has two novel stable stacking configurations (GST-II and GST-IV).GST-IV exhibits semi-metallic behavior, whereas GST-I and GST-II are semiconductors.Both semiconducting stackings have low κ l of 0.86 and 0.78 Wm -1 K -1 at 300 K, owing to their small phonon group velocities and short phonon lifetimes.Moreover, they show a combination of high n-type Seebeck coefficient and electrical conductivity due to the steep slope of conduction band density of states near bandgap, multiple conduction pocket electrons, and multiband conduction.The maximum ZT values of 2.23 and 1.91 are achieved in n-type stackings GST-I and GST-II at 710 K. Our work sheds light on the great potential of Ge 1 Sb 6 Te 10 with different atomic stackings for TE applications and will stimulate further experimental study.More importantly, from the perspective of materials informatics, this study provides significant insights that crystal systems with multilayered structures may open a viable route for creating new functional materials.