Abstract:The low Seebeck coefficient and the high thermal conductivity deteriorate the thermoelectric properties of GeTe. Herein, the Seebeck coefficient is enhanced by promoting band convergency induced by the strongly correlated d, f electrons of rare earth elements. The doping of Pb and Bi causes avoided crossing and hierarchical structure, strengthening the full‐spectrum scattering of phonons and decelerating the sound velocity. As a highly promising thermoelectric material in the mid‐temperature region, pristine GeTe shows deteriorated thermoelectric properties due to the low Seebeck coefficient and the intrinsic high thermal conductivity. Herein, it is discovered that the introduction of strongly correlated d, f electrons by alloying rare‐earth atoms at Ge sites will increase the band effective mass and promote band convergency, which can largely improve the electric transport property. Moreover, the heavy atoms (Pb, Bi) doping induces optical phonon softening and the avoided crossing between acoustic and optical phonon branches, decelerating both optical and acoustic phonon velocities. The modulated composition wave from the fluctuated multi‐component distribution introduces a complicated hierarchical structure including point defects and nanoprecipitates, which provides all‐scale scattering sources for heat‐carrying phonons and results in low lattice thermal conductivity. Consequently, a high zT of 2.4 at 800 K can be obtained in the Ge0.86Pb0.09Bi0.03Ce0.005Te sample due to the combination of strong correlation for d, f electrons and the full‐spectrum scattering for phonons. This work provides an effective strategy to increase the thermoelectric performance of IV–VI compounds by combining the modulated band structure and the softening phonon dispersion.

Antibonding P-D and S-P Hybridization Induce the Optimization of Thermal and Thermoelectric Performance of MGeTe3 (M = in and Sb)

Strong Phonon-Phonon Interactions Securing Extraordinary Thermoelectric Ge 1- x Sb x Te with Zn-Alloying-Induced Band Alignment.

Anionic regulation and valence band convergence boosting the thermoelectric performance of Se-alloyed GeSb 2 Te 4 single crystal

Crystal Symmetry Induced Structure and Bonding Manipulation Boosting Thermoelectric Performance of GeTe

Enhanced thermoelectric performance in GeTe-Sb2Te3 pseudo-binary via lattice symmetry regulation and microstructure stabilization

Electrical and Thermal Transport Properties of Ge1–xPbxCuySbyTeSe2y

Rhombohedral to Cubic Conversion of GeTe via MnTe Alloying Leads to Ultralow Thermal Conductivity, Electronic Band Convergence, and High Thermoelectric Performance

Discordant Distortion in Cubic GeMnTe2 and High Thermoelectric Properties of GeMnTe2- x%SbTe

Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

Valence Band Modification and Enhanced Phonon‐Phonon Interactions for High Thermoelectric Performance in GeTe

High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains

Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb2Te4 Single Crystals

Simultaneous Suppression of Phonon Transport and Carrier Concentration for Efficient Rhombohedral GeTe Thermoelectric

Thermoelectric Performance Optimization and Phase Transition of GeTe by Alloying with Orthorhombic CuSbSe 2

Enhancing the Thermoelectric Performance of GeSb4Te7 Compounds via Alloying Se

Modulating the Valence of Ga and the Deep Level Impurity for High Thermoelectric Performance of N-Type Pb0.98Ga0.02Te1-xSex Compounds

Structural Evolution and Thermoelectric Performance in (gete)m(sb2te3)n Compounds

Achieving Superior Thermoelectric Performance in Ge4Se3Te Via Symmetry Manipulation with I–V–VI2 Alloying

Thermoelectric performance of (AgBiTe2)1-x(SnTe)x with stable cubic enabled by enhanced configurational entropy

Synergistically Optimized Thermal Conductivity and Carrier Concentration in GeTe by Bi–Se Codoping

The role of Ge vacancies and Sb doping in GeTe: A Comparative Study of Thermoelectric Transport Properties in Sb<sub>x</sub>Ge<sub>1-1.5x</sub>Te and Sb<sub>x</sub>Ge<sub>1-x</sub>Te Compounds