Abstract:Defect identification for unintentionally induced defects and radiation-implemented defects always attracts great attention in semiconductor materials. Recent advances in carbon-implemented single-photon emitters in silicon urgently require the accurate identification of defect structures to reveal transition mechanisms. Using hybrid functional with finite size correction, we investigate the charge and optical transitions of carbon-related defects, including CSiCSi, VSiCSi, CSi, SiiCSiCSi, and Ci. Except for Ci, other defects present the negative-U feature in the charge transition process. CSiCSi and VSiCSi tend to perform p-type conductivity with the electron capture transition close to the valence band, of which transition level epsilon (0/-1) is 0.30 eV for CSiCSi and epsilon (+1/-2) is 0.34 eV for VSiCSi. CSi and SiiCSiCSi present a bipolar doping character, and CSi tends to capture holes with transition epsilon (0/+2) = 0.10 eV. The optical transitions that typically emit or absorb light in the telecom optical wavelength bands are identified in these defects in terms of band edge recombination. The zero-phonon lines of optical transitions of epsilon (+2/+1) for VSiCSi and Ci are consistent with a previous experiment involving single-photon emitters. The findings are helpful to understand the performance degradation of silicon devices and provide a reference for identifying the structure of carbon-related defects in silicon. This study investigates carbon-related defects in silicon using hybrid functional theory with finite size correction. The research explores charge and optical transitions of defects including CSiCSi, VSiCSi, CSi, Ci, and SiiCSiCSi. Optical transitions of these defects occur in telecommunication wavelength bands, validating previous experiments. The study provides insights for detecting defects in silicon.image (c) 2024 WILEY-VCH GmbH

Antisite Defect SiC as a Source of the DI Center in 4H‐SiC

IBIL Measurement and Optical Simulation of the DI Center in 4H-SiC

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Lattice Defects Distribution of H+ Implanted 4H-Sic Investigated by Deep-Ultraviolet Raman Spectroscopy

First-principles Identification of Deep Energy Levels of Sulfur Impurities in Silicon and Their Carrier Capture Cross Sections

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

Native point defects and carbon clusters in 4H-SiC: A hybrid functional study

The influence of intrinsic point defects on the electronic band structures and swelling behaviors of 4H-SiC

Divacancy and silicon vacancy color centers in 4H-SiC fabricated by hydrogen and dual ions implantation and annealing

Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing

Carbon antisite clusters in SiC: a possible pathway to the D_{II} center

Properties of Z1 and Z2 Deep-Level Defects in n-Type Epitaxial and High-Purity Semi-Insulating 4H-SiC

First Principles Investigations on the Carbon-Related Defects in Silicon

On the experimental properties of the TS defect in 4H-SiC

Defects in SiC for Quantum Computing

Atomic-scale revealing defects in ion irradiated 4H-SiC

Formation of carbon interstitial-related defect levels by thermal injection of carbon into $n$-type 4$H$-SiC