Abstract:The predicted lower energy structures of neutral carbon cluster C-10 are presented by using the particle swarm optimization method in combination with quantum chemistry calculation. Our results describe a wonderful diversity of C-10 configuration with the DFT and MP2 methods. For linear and cyclic clusters, the energy of most stable monocyclic structure with D-5h symmetry is lower by 1.38 kcal/mol than the transition isomers with D-10h symmetry at CCSD(T)/cc-pVTZ level, which is consistent with the previous theoretical results by others. All linear structures of C-10 cluster have been certified as the metastable states at different calculation methods in this work. Simulated infrared spectra reveals that the extensive electron localization exists in the D-10h configuration leading to the decreasing of the number of vibration modes compared with D-5h, configuration. The nucleus independent chemical shift (NICS) calculations indicate that planar C-10 system is a stable aromatic compound and the position used to calculate the aromatic indices can be affected by the most shielding or deshielded location that we employed. The contribution of the delocalized electrons to the pi-aromaticity is identical in C1(a) and C1(b). By the adaptive natural density partitioning (AdNDP) and canonical molecular orbital (CMO) analysis, we know that the highly symmetric structures have more energy degenerate CMOs and 2 center-2 electron bond connection, and monocyclic C-10 cluster is a globally doubly (sigma- and pi-) aromatic compound. Topological analysis and natural bond orbital (NBO) analysis show that there isn't any electrostatic type of interactions in C-10 structures, and much of negative natural valence electron configuration comes from high angular momentum orbitals. According to the electron configurations, the natural hybrid orbital is mainly composed of sp hybrid in the systems. It is worth mentioning that the competition of complicated many body effects plays a significant role in stabilizing the distorted configuration of C-10 cluster. We expect our work can provide more information for further experimental studies. (C) 2017 Elsevier B.V. All rights reserved.

Carbon antisite clusters in SiC: a possible pathway to the D_{II} center

Structures and absorption optical spectra of silicon cluster Si 9 via first-principles calculations

Ab Initio Investigation of Structure, Spectrum, Aromaticity and Electronic Properties of C 10 Carbon Cluster

Antisite Defect SiC as a Source of the DI Center in 4H‐SiC

Optical lineshapes of the C-center in silicon from ab initio calculations: Interplay of localized modes and bulk phonons

Formation of carbon interstitial-related defect levels by thermal injection of carbon into $n$-type 4$H$-SiC

Carbon cluster emitters in silicon carbide

Native point defects and carbon clusters in 4H-SiC: A hybrid functional study

Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC

Clustering of vacancy defects in high-purity semi-insulating SiC

Characterization and formation of NV centers in 3C, 4H and 6H SiC: an \emph{ab initio} study

The positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC

Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC

Vacancy-related color centers in twodimensional silicon carbide monolayers

On the experimental properties of the TS defect in 4H-SiC

Theoretical Study of Carbon Clusters in Silicon Carbide Nanowires

Vacancy-related color centers in two-dimensional silicon carbide monolayers

Carbon dimer in silicon cage: A class of highly stable silicon carbide clusters

Accelerated atomistic simulation study on the stability and mobility of carbon tri-interstitial cluster in cubic SiC

Annealing mechanisms of intrinsic defects in 3C-SiC: a theoretical study